INFN and University of Perugia Characterization of radiation damage effects in silicon detectors at High Fluence HL-LHC D. Passeri (1,2), F. Moscatelli.

Slides:

Advertisements

Similar presentations

8 th RD50 Workshop Prague June Università degli Studi Università degli Studi di Perugia di Perugia 1 Annealing effects on p + n junction 4H-SiC.

Advertisements

Epitaxial Silicon Detectors for Particle Tracking Overview on Radiation Tolerance at Extreme Hadron Fluence G. Lindström (a), E. Fretwurst (a), F. Hönniger.

TCT study of silicon epitaxial and MCZ detectors V. Eremin 1, M. Boscardin 2, M. Bruzzi 3, D. Creanza 4, A. Macchiolo 5, D. Menichelli 3, C. Piemonte 2,

Torino Exploiting commercial CMOS technologies for:  detection of Minimum Ionizing Particles for High Energy Physics experiments  direct detection.

Università degli Studi di Perugia Università degli Studi di Perugia IMM Bologna 1 Measurements and Simulations of Charge Collection Efficiency of p+/n.

Trapping in silicon detectors G. Kramberger Jožef Stefan Institute, Ljubljana Slovenia G. Kramberger, Trapping in silicon detectors, Aug , 2006,

New approach to simulate radiation damage to single-crystal diamonds with SILVACO TCAD Florian Kassel, Moritz Guthoff, Anne Dabrowski, Wim de Boer.

Design of semiconductor detectors for digital mammography IWORID 2002 Amsterdam, 8-12 September + S.R.Amendolia a, M.Boscardin.

F.R.Palomo, et al.MOS Capacitor DDD Dosimeter 1/13 RD50 Workshop - CERN – November 2012 MOS Capacitor Displacement Damage Dose (DDD) Dosimeter F.R.

CMS Pixel Simulation Vincenzo Chiochia

4/28/01APS1 Test of Forward Pixel Sensors for the CMS experiment Amitava Roy Daniela Bortoletto Gino Bolla Carsten Rott Purdue University.

Sensors for CDF RunIIb silicon upgrade LayerR min (cm)1 MeV eq-n cm * * * * * *10.

ECE685 Nanoelectronics – Semiconductor Devices Lecture given by Qiliang Li.

On MCz SCSI after 24 GeV/c proton irradiation 12th RD50 Workshop Ljubljana, 2-4 June 2008 D. Creanza On behalf of the Bari and Pisa RD50 groups.

X-ray radiation damage of silicon strip detectors AGH University of Science and Technology Faculty of Physics and Applied Computer Science, Kraków, Poland.

Detectors and electronics for Super-LHC: IRRADIATION RESULTS Andrea Candelori INFN Sezione di Padova.

Gunnar Lindstroem – University of HamburgHamburg workshop 24-Aug-061 Radiation Tolerance of Silicon Detectors The Challenge for Applications in Future.

Study of leakage current and effective dopant concentration in irradiated epi-Si detectors I. Dolenc, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž Jožef.

Study of Behaviour of n-in-p Silicon Sensor Structures Before and After Irradiation Y. Unno, S. Mitsui, Y. Ikegami, S. Terada, K. Nakamura (KEK), O. Jinnouchi,

Edge-TCT and Alibava measurements with pion and neutron irradiated micro-strip detectors V. Cindro 1, G. Kramberger 1, I. Mandić 1, M. Mikuž 1,2, M. Milovanović.

TCAD Simulations of Radiation Damage Effects at High Fluences in Silicon Detectors with Sentaurus TCAD D. Passeri(1,2), F. Moscatelli(2,3), A. Morozzi(1,2),

S. Mattiazzo 1,2, M. Battaglia 3,4, D. Bisello 1,2, D. Contarato 4, P. Denes 4, P. Giubilato 1,2,4, D. Pantano 1,2, N. Pozzobon 1,2, M. Tessaro 2, J. Wyss.

Development of n-in-p planar pixel sensors with active edge for the ATLAS High-Luminosity Upgrade L. Bosisio* Università degli Studi di Trieste & INFN.

Effect of Metal Overhang on Electric Field for Pixel Sensors Kavita Lalwani, Geetika Jain, Ranjeet Dalal, Kirti Ranjan & Ashutosh Bhardwaj Department of.

Minni Singla & Sudeep Chatterji Goethe University, Frankfurt Development of radiation hard silicon microstrip detectors for the CBM experiment Special.

Trento, Feb.28, 2005 Workshop on p-type detectors 1 Comprehensive Radiation Damage Modeling of Silicon Detectors Petasecca M. 1,3, Moscatelli F. 1,2,3,

1 Development of radiation hard microstrip detectors for the CBM Experiment Sudeep Chatterji GSI Helmholtz Centre for Heavy Ion Research DPG Bonn 16 March,

N. Zorzi Trento, Feb 28 – Mar 1, 2005 Workshop on p-type detectors Characterization of n-on-p devices fabricated at ITC-irst Nicola Zorzi ITC-irst - Trento.

Simulations of 3D detectors

Technology Overview or Challenges of Future High Energy Particle Detection Tomasz Hemperek

1 Device Simulations & Hardware Developments for CBM STS Sudeep Chatterji CBM Group GSI Helmholtz Centre for Heavy Ion Research CBM Collaboration Meeting,

Charge Collection and Trapping in Epitaxial Silicon Detectors after Neutron-Irradiation Thomas Pöhlsen, Julian Becker, Eckhart Fretwurst, Robert Klanner,

G. Steinbrück, University of Hamburg, SLHC Workshop, Perugia, 3-4 April Epitaxial Silicon Detectors for Particle Tracking Overview on Radiation Tolerance.

Joachim Erfle Summary of measurements after first irradiation of HPK samples 19 th RD50 Workshop November 2011 CERN Joachim.

1/14 Characterization of P-type Silicon Detectors Irradiated with Neutrons M.Miñano 1, J.P.Balbuena 2, C. García 1, S.González 1, C.Lacasta 1, V.Lacuesta.

New research activity “Silicon detectors modeling in RD50”: goals, tasks and the first steps Vladimir Eremin Ioffe Phisical – technical institute St. Petresburg,

9 th “Trento” Workshop on Advanced Silicon Radiation Detectors Genova, February 26-28, 2014 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica.

Inversion Study on MCz-n and MCz-p silicon PAD detectors irradiated with 24 GeV/c protons Nicola Pacifico Excerpt from the MSc thesis Tutors: Prof. Mauro.

Defect Engineering and Pad Detector Characterization Defect engineering: Search for hydrogen enrichment in silicon is still ongoing but takes time High.

Ljubljiana, 29/02/2012 G.-F. Dalla Betta Surface effects in double-sided silicon 3D sensors fabricated at FBK at FBK Gian-Franco Dalla Betta a, M. Povoli.

Characterization of irradiated MOS-C with X-rays using CV-measurements and gated diode techniques Q. Wei, L. Andricek, H-G. Moser, R. H. Richter, Max-Planck-Institute.

Evaluation of novel n + -in-p pixel and strip sensors for very high radiation environment Y. Unno a, S. Mitsui a, R. Hori a, R. Nagai g, O. Jinnouchi g,

Lehman Review April 2000 D. Bortoletto 1 Forward Pixel Sensors Daniela Bortoletto Purdue University US CMS DOE/NSF Review April 12,2000 Progress.

Celso Figueiredo26/10/2015 Characterization and optimization of silicon sensors for intense radiation fields Traineeship project within the PH-DT-DD section.

SMART Study of radiation damage induced by 24GeV/c and 26MeV protons on heavily irradiated MCz and FZ silicon detectors V. Radicci Dipartimento Interateneo.

KIT – Universität des Landes Baden-Württemberg und nationales Forschungszentrum in der Helmholtz-Gemeinschaft Status Interstrip resistance.

The Sixth International "Hiroshima" Symposium Giulio Pellegrini Technology of p-type microstrip detectors with radiation hard p-spray, p-stop and moderate.

7 th RD50 Workshop CERN Geneva November Università degli Studi Università degli Studi di Perugia di Perugia 1 Radiation Hardness of Minimum.

Studies on n and p-type MCz and FZ structures of the SMART Collaboration irradiated at fluences from 1.0 E+14 to 5.6E+15 p cm -2 RD50 Trento Workshop ITC-IRST.

6th Trento Workshop on Advanced Silicon Radiation Detectors1/16 J.P. BalbuenaInstituto de Microelectrónica de Barcelona IMB-CNM (CSIC) J.P. Balbuena, G.

Claudio Piemonte Firenze, oct RESMDD 04 Simulation, design, and manufacturing tests of single-type column 3D silicon detectors Claudio Piemonte.

Sabina Ronchin 1, Maurizio Boscardin 1, Nicola Zorzi 1, Gabriele Giacomini 1, Gian-Franco Dalla-Betta 2, Marco Povoli 3, Alberto Quaranta 2 ; Giorgio Ciaghi.

Double Electric field Peak Simulation of Irradiated Detectors Using Silvaco Ashutosh Bhardwaj, Kirti Ranjan, Ranjeet Singh*, Ram K. Shivpuri Center for.

Trench detectors for enhanced charge multiplication G. Casse, D. Forshaw, M. Lozano, G. Pellegrini G. Casse, 7th Trento Meeting - 29/02 Ljubljana1.

The MOS capacitor. (a) Physical structure of an n+-Si/SiO2/p-Si MOS capacitor, and (b) cross section (c) The energy band diagram under charge neutrality.

Journée simulations du réseau semiconducteurs TCAD simulations of edgeless pixel sensors aimed at HL-LHC Marco Bomben – LPNHE, Paris.

Charge collection in irradiated pixel sensors V. Chiochia a, C.Amsler a, D.Bortoletto c, L.Cremaldi d, S.Cucciarelli e, A.Dorokhov a,b*, C.Hörmann a,b,

Study of the Radiation Damage of Hamamatsu Silicon Photo Multipliers Wander Baldini Istituto Nazionale di Fisica Nucleare and Universita’ degli Studi di.

Experience with the Test and Qualification of ALICE Double-Sided Microstrip Sensors Workshop on Quality Issues in Present and Future Silicon Detectors.

9 th International conference “RD09, Italy” on 30 September-02 October 2009 A. Srivastava Numerical Modelling of Si Sensors for HEP Experiments and XFEL.

Axel König, HEPHY Vienna

Simulation results from double-sided and standard 3D detectors

Simulation/modeling group – discussion session

First production of Ultra-Fast Silicon Detectors at FBK

Radiation Tolerance of a 0.18 mm CMOS Process

Study of radiation damage induced by 26MeV protons and reactor neutrons on heavily irradiated MCz, FZ and Epi silicon detectors N. Manna Dipartimento.

HG-Cal Simulation using Silvaco TCAD tool at Delhi University Chakresh Jain, Geetika Jain, Ranjeet Dalal, Ashutosh Bhardwaj, Kirti Ranjan CMS simulation.

Study of radiation damage induced by 24/c GeV and 26MeV protons on heavily irradiated MCz and FZ silicon detectors N. Manna Dipartimento Interateneo di.

Results from the first diode irradiation and status of bonding tests

TCAD Simulations of Silicon Detectors operating at High Fluences D

Presentation transcript:

INFN and University of Perugia Characterization of radiation damage effects in silicon detectors at High Fluence HL-LHC D. Passeri (1,2), F. Moscatelli (2,3), A. Morozzi (1,2), E. Fiandrini (2), G.M. Bilei (2) (1) Dipartimento di Ingegneria - Università di Perugia, Italy (2) Istituto Nazionale Fisica Nucleare - Sezione di Perugia, Italy (3) IMM CNR Bologna, Italy (3) IMM CNR Bologna, Italy

Outline Main goal synopsis: i.extension of the TCAD model to simulate the effects of radiation damage on silicon devices the fluences at HL-LHC operation (> 2×10 15 n/cm 2 ); ii.development of a combined bulk damage effect and interface trap states build up modelling for a particle fluence > 2×10 16 n/cm 2 ; iii.validation of the new modeling scheme through comparison with measurements on different test structures (e.g. different technologies) before and after irradiation. Participants: G.M. Bilei (INFN PG staff), D. Passeri (UniPG staff), F. Moscatelli (INFN PG and CNR-IMM staff), E. Fiandrini (UniPG staff), A. Morozzi (UniPG PhD student). 2

Background: “University of Perugia” model 3 Hierarchical approach based on increasing number of deep-level recombination centres / trap states. Comprehensive modelling of device behaviour of with fluence: - depletion voltage, leakage current (  ), “double peak” shaped electric field, charge collection efficiency,… Meaningful and physically sounded parametrization. Three levels with donor removal and increased introduction rate (to cope with direct inter-defect charge exchange – numerically overwhelmed effect). n type and p type substrate Suitable for fluences up to cm -2 1 MeV neutrons.

New “University of Perugia” model 4

Work plan: simulations 5 Bulk radiation damage modelling: - extension of the three-level UniPG modelling (capture cross section, charge multiplication, avalanche effects). Interface radiation damage modelling: - oxide fixed charge and interface trap - systematic study of acceptor/donor states at different energies. Technology (process) dependent effect -> deep level parameterization, oxide charge density, interface trap energy and density, cross sections (e/h), trap type (acceptor or donor). Comparison with literature data/dedicated measurements in terms of static parameters (R, C) and charge collection properties. Comprehensive modelling (bulk + interface, 2D/3D).

Simulations vs. measurements. Charge collection as a function of radiation fluences at T=248K, V BIAS =900V. Interstrip resistance as a function of bias voltage at different radiation fluences. Effect of the acceptor Si/SiO 2 trap state – accumulation layer modulation. Work plan: simulations (2)

Work plan: measurements 7 Measurements on dedicated test structures e.g. gated diodes, MOS capacitors and MOSFETs on p-spray/different substrates. Different technologies (e.g. FBK, IMM, Hamamatsu). High-Frequency and Quasi-Stationary C, MOSFET V TH and I-V characteristics, … Irradiation campaign with gammas, x-ray (up to 500 Mrad) and protons/neutrons at very high fluences (2x10 16 n eq /cm 2 ). Measurements after irradiation -> trap parameter extraction, TCAD model validation. Predictive application of the model -> sensor design and optimization. TCAD simulation activity already started (13 th Pisa meeting poster presentation, NSS 2015 abstract submitted).

Test structures layout Al-gate MOS capacitor p-spray Al-gate MOS Transistors p-stop Gated-diode Al-gate MOS transistors p-spray Diode Al-gate MOS capacitor p-stop Test structures (MOS Capacitors, Gated Diodes, FET) 15 test structures manufactured by FBK in Trento 6 test structures with 4 MOS capacitors for each die manufactured by IMM-CNR in Bologna

Electrical characterization facilities Parametric measurements at wafer level (semiautomatic probers with temperature controlled chucks, -50°C °C)

Gated Diodes (GD) characterization GD p-type substrates measured before and after irradiation with gamma in the range Mrad. Measurements will be repeated after annealing. Before irradiation 500 Mrad (annealing 80°C 10 min)

MOS Capacitor characterization Before irradiation10 Mrad (annealing 80°C 10 min)

Oxide charge density (N OX ) Good agreement with literature data J. Zhang, “X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL,” Ph.D. dissertation, Universität Hamburg, Hamburg, Germany, 2013.

Interface trap state density (N IT ) Acceptors measured on n-type* Donors measured on p-type J. Zhang, “X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL,” Ph.D. dissertation, Universität Hamburg, Hamburg, Germany, 2013.