Fundamentals of Semiconductor Physics 万歆 Zhejiang Institute of Modern Physics Fall 2006.

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Presentation transcript:

Fundamentals of Semiconductor Physics 万歆 Zhejiang Institute of Modern Physics Fall 2006

Five-Point Plan for Success ☺Pursue your passions ☺Venture where you have never ventured before ☺Pace yourself ☺Serve others ☺Have lots of fun -- Princeton President Shirley M. Tilghman

Chapter 2. Silicon Technology Two foundations of successful engineering: –Mastery of physics concepts –Perfect technology – means to transfer concepts into useful structures. Total 3 hours.

IC Card

Si, Ge & GaAs Technological evolution began with gemanium in 1940s. –Band gap E g = 0.67 eV –At 300 K, intrinsic carrier density n i = 2.5 x cm -3 –n i arises fast with T, due to small E g – ~10 15 cm -3 at 400 K –Device not useful when intrinsic carrier concentration is comparable to dopant density. Research efforts shifted to silicon (E g = 1.12 eV) and GaAs (E g = 1.42 eV) in 1950s.

Advantages of Silicon Key: ability to form on silicon a stable, controllable oxide film (silicon oxide, SiO 2 ) that has excellent insulating properties. Selective etching: HF dissolves SiO 2 not Si SiO 2 shields Si from doping (photosensitive polymer films are used to define shielded regions).

Wafer – Chips - Devices

The Whole Process

Planar Process Formation of a masking oxide layer Its selective removal Deposition of dopant atoms on or near the wafer surface Their diffusion into the exposed silicon regions

Czochralski Process

Single-Crystal Ingots of Silicon

Dopant Concentration

Floating-Zone Process

Primary & Secondary Flat

Silicon Wafers

MOSFET: An Example

Lithography & Pattern Transfer

Why Clean Room?

Thermal Oxidation

Silicon-Silicon Dioxide

Contact & Proximity Printing

Projection Printing

Positive & Negative Photoresist

Lift-off

Pattern Transfer

Doping: Gaseous Deposition

Doping: Ion Implantation

Doping Comparison

Metallization