Silicon Photo Multipliers as readout for the NA62 CEDAR Detector Silicon Photo Multipliers as readout for the NA62 CEDAR Detector The NA62 Collaboration.

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Presentation transcript:

Silicon Photo Multipliers as readout for the NA62 CEDAR Detector Silicon Photo Multipliers as readout for the NA62 CEDAR Detector The NA62 Collaboration (Bern ITP, Birmingham, CERN, Dubna, Fairfax, Ferrara, Florence, Frascati, Louvain, Mainz, Menlo Park, Merced, Moscow, Naples, Perugia, Pisa, Protvino, Rome I&II, S.Luis Potosi, Sofia, Turin, Vancouver) G. Collazuol, G. Lamanna, S. Venditti (Pisa University & INFN) SPAD (Single Photon Avalance Diods) Diodes working in the discharge (Geiger) regime CEDAR(ChErenkov Differential counter with Achromatic Ring focus) Used at CERN since 70s to tag on-beam particles Optics condenses light into 8 spots (1x3 cm 2 each) 6(or 7)/8 spot coincidence CHANGES FOR NA62: Hydrogen filling to reduce multiple scattering Readout and electronics to be renewed READOUT REQUIREMENTS R Kaon ~50 MHz (R TOT ~1 GHz) R γ ~2 MHz/mm 2 (on spots) Kaon tag Eff. > 95% Contamination < Time resolution < 100 ps Diode Bias V BIAS above V BD Photoelectron triggers avalanche I quenching through R Q (>> Rs) required to detect other p.e. It is a BINARY (trigger) system Gain = C D (V BIAS -V BD )/q e BR(K + → π + νν) THEORY = (8.22±0.84)· BR(K + → π + νν) EXP = (1.73 )· ( 7 candidates ) K + → π + νν BR measures one side of CKM triangle Theoretical prediction depending on top (dominant) and charm contributions in loops THEORY E787/E949, Phys.Rev.Lett.101, (2008) NA62 GOALS Unconstrained BG (~8%) LAV Constrained BG (~92%) CEDAR: On-beam Kaon tagging through Cherenkov effect GIGATRACKER: hi-res P K measurement, sub-ns resolution VETOES: 12 stations to veto particles from BG decays STRAW CHAMBERS: Track momentum at <% resolution LKR: γ rejection at [ ] level for E γ =[2.5-10] GeV HAC/MUV: μ + reco (MUV), E(π + ) deposit analysis (HAC) NA62 LAYOUT Collect ~ 100 K + → π + νν events with ~10% BG in 2 years High efficiency in rejecting photons and muons from Kaon decays t i 1-exp(-t/ τ ) 99% recovery time~5 τ Q  Q C D R S V BD R Q V BIAS V D DIODE SIPM (SIlicon PhotoMultiplier) A SIPM is a MATRIX of SPADS Single SPADs (cells) independent, give the same signal when hit by a γ Several hundred cells/mm 2 Output charge proportional to N γ Small % of dead surface ∑ (digital signals) = analog signal SIPMs for CEDAR readout NOISE Dark count: free carriers can trigger avalanches, depends on N CELL /SIPM, R DC ~1 MHz Afterpulse: Due to carrier releasing by traps, increases with radiation Cross-Talk: Signal in a cell triggers neighbour cells EFFICIENCY ~70% for SIPMs, depends on dead material, quantum eff. and shower trigger probability DYNAMICAL RANGE Output proportional to N γ unless N γ < # CELLS Assuming to place on each CEDAR spot a 4x4 matrix of 3x3 mm 2 and 900 channel SIPM one gets: PDE x 3 wrt using normal PMs (but SIPMs are less sensible to UV); PDE is a function of spectrum 10 Cherenkov 50 MHz, i.e. 3 photoelectrons/spot, i.e. 10MHz/channel (single γ ) Detection efficiency for 3 p.e./spot and using 6(7)/8 coincidence method is >> 95% Cherenkov light can be redirected far from the quartz window using mirrors to: reduce radiation damages concentrate Ch. light on a smaller surface to reduce the SIPM dimensions NOISE DARK CURRENT: 500 KHz/mm T=300K Moderate cooling (T=250/200K) required Lower gain (lower V BIAS ) to reduce DC Larger cells, coincidences among them Even though full recovery time of a single cell is ~100 ns, the high number of channels allows to stand a rate of ~100 MHz/mm 2 (single γ ) AFTER-PULSES: not an issue (+1 MHz/spot) CROSS-TALK: well below 1% EQUIVALENT CIRCUIT τ =R S C D τ Q =R Q C D I=(V BIAS -V BD )/(R Q +R S ) exp(-t/ τ Q ) MIRRORS SIPMs CELL SIZEFILL FACTOR 40x40 μ m 2 44% 50x50 μ m 2 50% 100x100 μ m 2 76% CIRCULAR SIPM