Punch-through protection in ATLAS SCT sensors A.Chilingarov, Lancaster University, UK Meeting on Investigations into the effect of beam splash on SCT Modules.

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Presentation transcript:

Punch-through protection in ATLAS SCT sensors A.Chilingarov, Lancaster University, UK Meeting on Investigations into the effect of beam splash on SCT Modules CERN,

A.Chilingarov, Punch-through protection in ATLAS SCT sensors 2 Outline 1.Measurement method 2.Main results reported in Some recent results

A.Chilingarov, Punch-through protection in ATLAS SCT sensors 3 A  RbRb R str R dyn 1. Punch-through (PT) resistance measurement method Positive DC potential, U strip, varying from 0.5 to 50 V is applied to the strip implant and the resulting current, I strip, is measured. The slope dU s /dI s gives an effective dynamic resistance, R eff, between the strip and the bias rail. Note that the PT behaviour is not necessarily polarity independent. R eff consists of the bias resistor, R b, with R dyn + R str in parallel. R dyn is the dynamic resistance of the 8  m punch- through gap. Above the PT onset voltage R dyn decreases quickly with U strip. The R str is the strip implant resistance between the punch-through gap and the contact point.

Measurement of the punch-through protection voltage for ATLAS SCT sensors A.Chilingarov, Lancaster University, UK (extracts) Meeting on Silicon Strip Sensors for ATLAS Upgrade CERN, Main results reported in 2007

A.Chilingarov, Punch-through protection in ATLAS SCT sensors 5 The punch-through protection voltage U pth was measured with the detectors biased by 100 V, which is above U d for all detectors. The positive bias from a separate source-meter was applied to the strip implant and the resulting current was measured as a function of bias. At low volts the slope of the IV curve reflects the value of the polysilicon bias resistor. The punch- through appears as a soft breakdown in the IV.

A.Chilingarov, Punch-through protection in ATLAS SCT sensors 6 Differential resistance dU/dI was calculated from the measured IV curves. It has a similar shape for all 7 detectors A non-smooth behaviour of some characteristics is an artefact related to an insufficient precision of the voltage settings in earlier measurements. This was fixed later (e.g. for the measurements with w and w31-225). PT onset voltage lies between 8 and 14 V.

A.Chilingarov, Punch-through protection in ATLAS SCT sensors 7 3. Some recent results PT operation was tested up to ~1 mA strip current with the sensor w under 150 V bias at room temperature and ~50% RH. The measurements were performed with four different strips.

A.Chilingarov, Punch-through protection in ATLAS SCT sensors 8 For all strips the PT onset voltage is ~8.5 V and the minimum dynamic resistance is slightly above 10 k .

A.Chilingarov, Punch-through protection in ATLAS SCT sensors 9 Concluding remarks 1.The punch-through protection in the SCT sensors seems to work as expected. 2.The PT onset voltage lies between 8 and 14 V. 3.All reported measurements were made at about +21 o C temperature and 30-50% relative humidity.