鄭 建 民 10/07/2014

發電實驗設備的示意圖

(1) 含鉛 ( 雙層 )- 購買 (2) 無鉛 ( 單層 )- 自製 (3) 無鉛 ( 雙層 )- 自製

Tip Mass = 0 g, Amplitude =1.4 cm

Tip Mass = 2.7 g, Amplitude =1.7 cm

Tip Mass = 3.8 g, Amplitude =1.6 cm

Tip Mass = 4.4 g, Amplitude =1.2 cm

V max 轉換效率最佳 振動頻率 最佳 Tip Mass 含鉛雙層 ( 購買 ) 3.4 V 無鉛單層 ( 自製 ) 1.3 V 無鉛雙層 ( 自製 ) 2.25 V

本計畫期間發表之壓電與介電相關期刊論文 篇 (8 篇 SCI) 1. Kai-Huang Chen*, Chien-Min Cheng, Jen-Hwan Tsai, Chin-Hsiung Liao, Shu-Hua Liang, “Dielectric and Piezoelectric Characteristics in Lead-Free Li x (K 0.5 Na 0.5 ) 1-x (Nb 0.8 Ta 0.2 )O 3 Piezoelectric Ceramics Prepared by Two-Step Calcination Method,” Japanese Journal of Applied Physics, Vol. 51, No. 9, 09MD11, Sep Fann-Wei Yang, Kai-Huang Chen*, Chien-Min Cheng, Electrical and Physical Characteristics of Vanadium-Doped Bi 4 Ti 3 O 12 Ferroelectric Thin Films after Rapid Thermal Annealing,” Ferroelectrics, Vol. 435, Issue 1, pp , Dec Chien-Min Cheng*, Kai-Huang Chen, Fann-Wei Yang, “Effect of Sintering Temperature on Piezoelectric and Ferroelectric Properties of Lead-Free Piezoelectric Ta-modified (K 0.5 N 0.5 )NbO 3 Ceramics,” Ferroelectrics, Vol. 435, Issue 1, pp , Dec Fann-Wei Yang, Kai-Huang Chen*, Chien-Min Cheng, Feng-Yi Su, “Bipolar resistive switching properties in transparent vanadium oxide resistive random access memory”, Ceramics International, 39S, S729-S732, May 2013.Bipolar resistive switching properties in transparent vanadium oxide resistive random access memory 5. Wen-Chung Chang, Chih-Yung Wang, Kai-Huang Chen, Chien-Min Cheng*, “One-Transistor-Capacitor (1TC) Structure of Non-Volatile Ferroelectric RAM Using 0.95(Na 0.5 Bi 0.5 )TiO BaTiO 3 Thin Film”, Integrated Ferroelectrics, 143:1, 10-16, DOI: / , May Wen-Chung Chang, Chih-Yung Wang, Kai-Huang Chen, Chien-Min Cheng*, “One-Transistor-Capacitor (1TC) Structure of Non-Volatile Ferroelectric RAM Using 0.95(Na 0.5 Bi 0.5 )TiO BaTiO 3 Thin Film”, Integrated Ferroelectrics, 143:1, 10-16, DOI: / , May Kai-Huang Chen, Chien-Min Cheng*, Chun-Cheng Lin, Jen-Hwan Tsai, “Ferroelectric, Dielectric, and Physical Characteristics of (Ba 1-x Sr x )(Ti 1-y Zr y )O 3 Thin Films Deposited Prepared by RF Magnetron Sputtering”, Integrated Ferroelectrics, 143:1, 32-39, DOI: / , May Kai-Huang Chen, Chien-Min Cheng*, Chun-Cheng Lin, Jen-Hwan Tsai, “Fabrication and Electrical Characteristics of Metal-Ferroelectric Ba(Zr 0.1 Ti 0.9 )O 3 Film-Insulator-Silicon Structure for Nonvolatile Memory Devices Applications”, Integrated Ferroelectrics, 143:1, 40-46, DOI: / , May Min-Chang Kuan, Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, “Fabrication and Switching Characterizations of Copper Oxide Thin Films for Applications in Resistive Random Access Memory Devices,” Key Engineering Materials, Vol , pp , Mar Min-Chang Kuan, Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, Jian-Tz Lee, “Electrical and Physical Properties of (K 0.5 Na 0.5 )NbO 3 Ferroelectric Thin Films,” Key Engineering Materials, Vol , pp , Mar Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, “Electrical Characteristics in Transparent (Bi 3.25 Nd 0.75 )(Ti 2.9 V 0.1 )O 12 Ferroelectric Thin Films,” Key Engineering Materials, Vol , pp , Mar Min-Chang Kuan, Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, “Fabrication and Switching Characterizations of Copper Oxide Thin Films for Applications in Resistive Random Access Memory Devices,” Key Engineering Materials, Vol , pp , Mar Min-Chang Kuan, Fann-Wei Yang, Chien-Min Cheng*, Kai-Huang Chen, Jian-Tz Lee, “Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices,” Key Engineering Materials, Vol , pp , Mar Kai-Huang Chen, Jen-Wei Huang, Chien-Min Cheng*, Jian-Yang Lin, Tzung-Shiun Wu, “Nonvolatile transparent manganese oxide thin film resistance random access memory devices”, Japanese Journal of Applied Physics, Vol. 53, 08NL03, July 與李大輝師提出 104 年度 ” 能源科技學術合作研究計畫 ”--- 複審中 “ 應用於智慧綠建築外牆之陣列式微型風力發電裝置 ”

製作壓電薄片提供給陳文山師、李大輝師應用 轉換效率量測 ---- 已在進行，下次呈現 期刊論文 --- 至少 2 篇 / 每年 研討會論文 --- 至少 15 篇 / 每年 申請國科會計畫 申請能源科技學術合作研究計畫 申請產學計畫 申請專利 壓電薄片之應用

(b) 晶片摺層電容器結構與外觀 矩陣摺層電容器結構

1 Cell Capacitor = 20~30 nF 1 Chip Capacitor = 100 nF ~ 120 nF Dielectric Constant (  r ) = 100~180 Leakage = ~ A/cm 2 Retention = ~ 10 6 Sec Operation Temp. = 85 o C Charge Time = 0.5 ~ 2 Sec Super Capacitor Chip Parameter