Solid-State Devices & Circuits 13. Emitter and Source Followers

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Presentation transcript:

Solid-State Devices & Circuits 13. Emitter and Source Followers ECE 342 Solid-State Devices & Circuits 13. Emitter and Source Followers Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu

Emitter Follower

Emitter Follower High-Frequency Exact analysis is too tedious  approximate

Emitter Follower

High-Frequency Analysis of Emitter Follower sedr42021_0652a.jpg leads to: 

High-Frequency Analysis of Emitter Follower

Source Follower with Active Load Characteristics Provides a buffer stage M1 is amplifying stage M2 is active load

Source Follower – Incremental Model

Source Follower – High Frequency Since the source-to-substrate voltage for M1 varies, the body effect for that transistor must be included

Source Follower – High Frequency Modified high-frequency model

Source Follower – Frequency Response

Emitter Follower with Active Load (current mirror) Emitter follower can be used to drive a low-impedance load

Emitter Follower with Active Load Midband gain:

Emitter Follower with Active Load AC Properties Gain is less than 1 and near 1 for typical element values Frequency response has one zero and two poles Exact frequency response is difficult  Use SPICE Output stage of NPN current mirror serves as high impedance load at emitter of Q1