S. Lagomarsino, S. Sciortino, M. Brianzi D. Passeri, A. Morozzi

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Charge collection efficiency of three-dimensional polycrystalline diamond detectors S. Lagomarsino, S. Sciortino, M. Brianzi D. Passeri, A. Morozzi INFN, Department of Physics University of Florence (IT) INFN, University of Perugia M. Bellini, C. Corsi Vladimir Cindro LENS – European Laboratory of Nonlinear Spectroscopy Joseph Stephan Insitute, Lubljiana (SLO)

The three-dimensional detectors concept offers some advantages, if compared with the conventional planar: + + + + + + - - - - - - (Nucl. Instr. and Meth. A 395 pp 328-343 (1997) ) Shorter path and collection times: lower levels of charge trapping in the bulk Lower bias voltages Faster response These make 3D-detectors interesting for radiation tolerance characteristics

At the moment, 3D Silicon detectors have reached radiation tolerance performances comparable to that of diamond in terms of s/n ratio But the same improvements are expeted also for Diamond detectors, if only the 3D concept could be reliably implemented.

Method of fabrication and resume of the results with 3D scCVD detectors Perspectives and problems with pcCVD Fabrication and test of 3D-pcCVD detectors Expected behavior after radiation damage Radiation tolerance of 3D-pcCVD detectors, preliminary results Conclusions and open questions

Resume of the results with 3D scCVD detectors The present approach to 3D-diamond detectors fabrication is based on a simple pulsed laser technique which creates graphitic structures in the bulk diamond. T.V. Kononenko et al., Femtosecond laser microstructuring in the bulk of diamond, Diamond and Relat. Mater. 18 (2009) 196–199 T.V. Kononenko et al., Three-dimensional laser writing in diamond bulk, Diamond and Related Materials 20 (2011) 264–268 A. Oh et al. A novel detector with graphitic electrodes in CVD diamond. Diamond and Related Materials 38 (2013) 9-13 S. Lagomarsino et al. Three-dimensional diamond detectors: charge collection efficiency of graphitic electrodes, Applied Physics Letters 103, 233507 (2013) We made the choice to also fabricate the superficial contacts in graphitic carbon.

Resume of the results with 3D scCVD detectors The electrodes has been arranged in a way to avoid superficial conduction. Collecting electodes Bias electrodes Also conventional planar device has been fabricated on the same samples, in order to compare the performances of 3D and 2D detectors.

Resume of the results with 3D scCVD detectors Several devices has been fabricated on 5x5x0.5 mm3 diamond samples, and then connected to the read-out electronics with silver paste. Single Crystal Diamond 2D detector 3D Detector (30 fs laser pulses, 800 nm) (8ns laser pulses, 1064 nm) ~ 260 to 600 columns for each device

Resume of the results with 3D scCVD detectors Charge collection efficiency of -induced signals in diamond was tested for all the devices fabricated in SCr and PCr diamond.

Resume of the results with 3D scCVD detectors The 3D columns created with the 30 fs 800 nm pulses exhibit full collection, as well as the reference planar contacts, but saturation takes place at 3V instead of 30 V. 95%. 3 V 30 V

Resume of the results with 3D scCVD detectors Since we have a detector - Exhibiting a S/N ratio of about 50 (at  1 s formation time) - Transit time of the carriers <1ns Why to move to poly-crystalline diamond? - Dark currents 50 fA/column - Vbias = 3 V

Perspectives and problems with pcCVD Perspectives with pcCVD diamond : - Price and size (ratio sc/pc CVD  3, diameters of pcCVD wafers of order of inches) Shortening the carrier path from 500 m to 70-100 m (without detriment of the overall generated charge) could increase significantly the collected charge. pcCVD diamond presents a relatively higher resistance to radiation damage if compared with scCVD (both exhibit comparable efficiencies at 1016 cm-2 28 GeV protons fluence)

Perspectives and problems with pcCVD Problems with pcCVD diamond: Grain boundary are surfaces which high concentration of trapping centers, but the columnar structures of the grains in pcCVD diamond reduce their relevance in conventional planar sensors (the most of the charges are not trapped at the grain boundaries) On the contrary, in the 3D configuration, the reduction of the mean free path can be very relevant. There has to be a maximum inter-electrode distance to obtain acceptable charge collection.

Fabrication and test of 3D-pcCVD detectors In order to study the thematics connected with 3D-pcCVD diamond sensors, we fabricated 3 different kind of detectors on 4 separated pcCVD sample of a same batch from E6: ELP106 ELP 107 ELP 108 ELP 114

Fabrication and test of 3D-pcCVD detectors In order to study the thematics connected with 3D-pcCVD diamond sensors, We fabricated 3 different kind of detectors on 4 separated pcCVD sample of a same batch from E6: 2D 3D160x100 3D114x70 1.5 mm 70 m 114 m 100 m 160 m

Fabrication and test of 3D-pcCVD detectors Comparing the collected charge of the three kind of sensors at several bias voltages: 114x70 Qcoll (e) Qcoll (e) 2D sensors 3D sensors 160x100 114x70 160x100 Vbias (V) Vbias (V) Saturation occurres at voltages ten times lower for the 3D compared with 2D sensors. First conclusion: The implementation of 3D concept in poly-crystalline detectors represents a substantial improvement respect to the conventional planar sensors. 3D have a higher efficiency compared with 2D sensors (20%), if the electrodes inter-distance is small enought. The separations of the 10% percentile of the distribution from the pedestal are comparable for 2D and 3D detectors.

Expected behavior after radiation damage Moreover: the same 3D detectors, if compared with 2D-ones, are expected to behave even better once undergone to radiation damage.   Drift velocity (field dependent) Mean trapping lenght at the grain boundaries (configuration dependent) Wgrain

Expected behavior after radiation damage Moreover: the same 3D detectors, if compared with 2D-ones, are expected to behave even better once undergone to radiation damage.   The radiation damage is supposed to shorten trap according to a term proportional to the fluence    In a 3D detector, were inter-electrode distance is chosen in a way to compensate the shorter Wgrain, the therm K has a much lower weight.

 > Expected behavior after radiation damage We have fitted the 2D-sensor S-curve by means of the Hecht formula, in order to calculate trap and Wgrain       Thus we simulated the charge-collection of 3D-sensors by means of a Monte Carlo algorithm using a bidimensional approximation of the electric field, adjusting Wgrain in a way to reproduce the behavior at saturation 4.9 ns fixed 2D 3D160x100 3D114x35 trap Wgrain 155 m 4.9 ns fitted  > Compatible with the columnar size and shape 26 m 28 m fitted

Expected behavior after radiation damage 2D 3D160x100 3D114x35 trap Wgrain 4.9 ns 4.9 ns 4.9 ns   fitted fixed fixed fitted fitted fitted 155 m 28 m 26 m Then we simulated the expected charge collected as a function of k (K depends on the radiation (energy, specie)) We expect, for high fluences, a signal up to 3 times higher for the 3D-sensors, compared to the conventional planar ones. Q/e 3D114x70 3D160x100 2D k (s-1)

Radiation tolerance of 3D-pcCVD detectors, preliminary results We have irradiated our samples at the Jozef Stefan Institute facility of Lubljiana (SLO), at 1MeV-equivalent neutron fluences up to 1.2 x1016cm-2. Up to now, we obtained preliminary results for the fluences of 3x1015cm-2 and 6x1015cm-2 for the 2D and 3D114x70 det. Q/e 3D114x70 2D  (cm-2)

Radiation tolerance of 3D-pcCVD detectors, preliminary results The measurements fit quite well the expected behavior as a function of k with the appropriate value of k Q/e  (cm-2)

Conclusions and open questions 3D pcCVD diamond sensors exhibit Much lower saturation bias voltages compared with 2D (tens vs. hundrends of volts) The same of higher charge collection efficiency The same order of S/N ratio Much higher radiation tolerance. (up to three times higher) Open questions: all these conclusion are referred to the average behavior of a 3D detector, - What about the uniformity of the response of each pixel? Is it influenced mainly by field non-homogeneity? Is it influenced by the grain distribution? In the future: Fabrication of 3D pixel detectors

Charge collection efficiency of three-dimensional polycrystalline diamond detectors S. Lagomarsino, S. Sciortino, M. Brianzi D. Passeri, A. Morozzi INFN, Department of Physics University of Florence (IT) INFN, University of Perugia M. Bellini, C. Corsi Vladimir Cindro LENS – European Laboratory of Nonlinear Spectroscopy Joseph Stephan Insitute, Lubljiana (SLO)