BeamCal Electronics Status FCAL Collaboration Meeting LAL-Orsay, October 5 th, 2007 Gunther Haller, Dietrich Freytag, Martin Breidenbach and Angel Abusleme.

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Presentation transcript:

BeamCal Electronics Status FCAL Collaboration Meeting LAL-Orsay, October 5 th, 2007 Gunther Haller, Dietrich Freytag, Martin Breidenbach and Angel Abusleme

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 2 Presentation Outline  The BeamCal detector  BeamCal electronics challenges  BeamCal electronics operation  High level design  Amplifier design  Filter design  ADC and memory issues  Fast feedback design  Radiation hardness requirements  Tentative design schedule  People

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 3 The BeamCal detector  Mission:  To provide feedback for instantaneous luminosity tuning via beamstrahlung pairs  To extend the calorimeter hermeticity to the very forward region (low polar angles)  BeamCal structure  2 end caps   30 Silicon – Tungsten sandwiched layers per cap   1512 channels per layer  Total channel count: 90,720  At 32 channels per chip, this implies 2836 chips

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 4 BeamCal electronics challenges  32 channels per chip  Large input signals, up to 40pC  High occupancy, all data is read out at 10 bits for science purposes; gated reset is necessary  Low latency output, sum of all channels is read out after each bx at 8 bits for beam diagnosis (fast feedback)  Dual-gain front-end (50 ratio), for normal operation and physical signals calibration  Radiation hardness requirements  Parasitics due to 15-cm wires between detector and chip, detrimental for front-end performance  Minimum power dissipation  Prototype in 0.18-m TSMC CMOS technology

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 5 BeamCal electronics operation  Dual-gain front-end electronics: charge amplifier, pulse shaper and T/H circuit  Successive approximation ADC, one per channel  Digital memory, 2820 (10 bits + parity) words per channel  Analog addition of 32 channel outputs for fast feedback; low-latency ADC

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 6 BeamCal electronics operation Timing diagram: between pulse trains

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 7 BeamCal electronics operation Timing diagram: between individual pulses  Pipelined timing  Exact timing could be mode-dependent

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 8 High level Design  Behavioral simulations carried out to find:  Best architecture  Expected performance  Expected power consumption  Conclusions  Charge amplifier current: about 300A  Filter design: CR-RC (bandpass)  Peaking time: 200ns

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 9 High level design  Noise simulation, physics calibration mode

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 10 Amplifier design  Basic charge amplifier – a voltage amplifier and capacitive feedback  Low noise design (input transistor, gm/Id approach)  NMOS input device  Two feedback capacitors for different gains  Switches for mode selection and reset  1-V output swing

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 11 Amplifier design  SPICE output waveforms, normal operation and physics calibration

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 12 Filter design  Filter domain  Continuous time: issues for  calibration  Sampled time: precisely adjustable   Filter topology  CR-RC: inadequate for gated reset  Biquad: perfect for gated reset  Implementation details  Fully differential, switched-capacitor biquad implementation  Using SC inverting integrators (backward Euler integration)  Filters voltage across feedback capacitor – good PSR  100MHz switching frequency does not affect frequency response in band of interest  25MHz switching frequency does affect frequency response and requires an increase in charge amplifier current in order to meet noise specs

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 13 Filter design  Filter output waveforms, behavioral simulation

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 14 Filter design  Amplifier and filter spectra

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 15 Filter design  Differential, continuous-time biquad…

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 16 Filter design  Conversion to SC + reset transistors

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 17 Filter design  Output waveforms, normal operation and physics calibration

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 18 ADC and memory issues  ADC power consumption is lightly dependent on the number of ADCs  one channel per ADC is simple in terms of operation  many channels per ADC are efficient in terms of area  successive approximation ADCs present a balanced tradeoff, could eventually assign a single channel per ADC without a significant increase in area  Memory choice: analog or digital?  Analog memory problems:  high droop rate due to switch leakage in TSMC018 (especially after irradiation)  radiation-tolerance techniques are not simple nor flexible  Digital memory problems:  more area  Digital memory will be used mainly due to flexibility

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 19 Fast feedback design  Each channel’s analog signal is extracted at the track-and-hold circuit output  Analog adder generates the chip fast feedback signal  A fast (low-latency) ADC is used to produce the digital output

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 20 Radiation hardness requirements  Chip must be able to tolerate 1Mrad(SiO 2 ) total ionizing dose (TID)  TSMC018 is naturally tolerant to TID, but some sensitive circuits in the chip require additional protection  This can be done by using mitigation techniques:  Enclosed-layout transistors  Guard rings  Consequences in circuit design:  Power consumption increases by 2 or more, depending on the circuit  Chip area increases by 2.5 in some circuits  First prototype will not be radiation-tolerant, but will allow to:  assess the technology tolerance to radiation  detect the most radiation sensitive circuits

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 21 Tentative design schedule  April 2007:High level design complete  July 2007:Charge amplifier designed  October 2007: Filter designed  January 2008: ADC designed  February 2008: Memory designed  March 2008: Fast feedback designed  April 2008: Bias and supporting circuits  July 2008: Circuit layout complete  August 2008: Verification complete  October 2008: Prototype ready  January 2009: Prototype tests complete

Stanford Linear Accelerator Center FCAL Collaboration Meeting 2007, LAL-Orsay 22 People  Angel Abusleme (PhD student) 2  Professor Martin Breidenbach 1  Dietrich Freytag 1  Gunther Haller 1  Professor Bruce Wooley 2 Affiliations 1. SLAC 2. Department of Electrical Engineering, Stanford University