Basic model p n +-

Characteristics of a Schottky diode and a PN junction diode

Basic assumptions pn

Basic model notation p n

Evolution of the density perturbations Drift due to the electric field Diffusion of the perturbation Generation of additional perturbation Collision lifetime Steady-state Neglect drift and generation

Currents – sum of hole and electron currents

Reverse saturation current These are minority carrier diffusion currents only.

These are minority carrier diffusion currents only. p n Majority carriers are defined as the following. The existence of a diffusion current implies an inhomogeneous density profile resulting in a nonzero electric field.

Majority carriers p n Majority carrier electron current Majority carrier hole current I Minority carrier diffusion current Minority carrier diffusion current Holes are injected from the p region Electrons are injected from the n region

Currents – sum of hole and electron currents Reverse saturation current

Currents – sum of hole and electron currents

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Simple three-dimensional unit cell