Lecture #9 OUTLINE Continuity equations Minority carrier diffusion equations Minority carrier diffusion length Quasi-Fermi levels Read: Sections 3.4, 3.5.

Slides:



Advertisements
Similar presentations
Chapter 6-2. Carrier injection under forward bias
Advertisements

Chapter 6-1. PN-junction diode: I-V characteristics
Semiconductor Device Physics
Lecture #5 OUTLINE Intrinsic Fermi level Determination of E F Degenerately doped semiconductor Carrier properties Carrier drift Read: Sections 2.5, 3.1.
Semiconductor Device Physics Lecture 3 Dr. Gaurav Trivedi, EEE Department, IIT Guwahati.
Semiconductor Device Physics
Semiconductor Device Physics Lecture 6 Dr. Gaurav Trivedi, EEE Department, IIT Guwahati.
Lecture #6 OUTLINE Carrier scattering mechanisms Drift current
EE105 Fall 2007Lecture 3, Slide 1Prof. Liu, UC Berkeley Lecture 3 ANNOUNCEMENTS HW2 is posted, due Tu 9/11 TAs will hold their office hours in 197 Cory.
EE105 Fall 2007Lecture 1, Slide 1 Lecture 1 OUTLINE Basic Semiconductor Physics – Semiconductors – Intrinsic (undoped) silicon – Doping – Carrier concentrations.
Spring 2007EE130 Lecture 23, Slide 1 Lecture #23 QUIZ #3 Results (undergraduate scores only, N = 39) Mean = 22.1; Median = 22; Std. Dev. = High =
OUTLINE pn junction I-V characteristics Reading: Chapter 6.1
Announcements HW1 is posted, due Tuesday 9/4
Lecture #8 OUTLINE Generation and recombination Excess carrier concentrations Minority carrier lifetime Read: Section 3.3.
Spring 2007EE130 Lecture 19, Slide 1 Lecture #19 OUTLINE pn junctions (cont’d) – Charge control model Reading: Finish Chapter 6.3.
Department of EECS University of California, Berkeley EECS 105 Fall 2003, Lecture 8 Lecture 8: Capacitors and PN Junctions Prof. Niknejad.
EE105 Fall 2011Lecture 3, Slide 1Prof. Salahuddin, UC Berkeley Lecture 3 OUTLINE Semiconductor Basics (cont’d) – Carrier drift and diffusion PN Junction.
Lecture #18 OUTLINE pn junctions (cont’d)
Lecture #7 OUTLINE Carrier diffusion Diffusion current Einstein relationship Generation and recombination Read: Sections 3.2, 3.3.
Spring 2007EE130 Lecture 17, Slide 1 Lecture #17 OUTLINE pn junctions (cont’d) – Reverse bias current – Reverse-bias breakdown Reading: Chapter 6.2.
Drift and Diffusion Current
Potential vs. Kinetic Energy
EXAMPLE 8.1 OBJECTIVE To determine the time behavior of excess carriers as a semiconductor returns to thermal equilibrium. Consider an infinitely large,
1 Prof. Ming-Jer Chen Department of Electronics Engineering National Chiao-Tung University October 9, 2014 DEE4521 Semiconductor Device Physics Lecture.
Lecture 4 OUTLINE Semiconductor Fundamentals (cont’d)
Ch 140 Lecture Notes #13 Prepared by David Gleason
L04 24Jan021 Semiconductor Device Modeling and Characterization EE5342, Lecture 4-Spring 2002 Professor Ronald L. Carter
Carrier Transport Phenomena And Measurement Chapter 5 26 February 2014
ECEE 302: Electronic Devices
Empirical Observations of VBR
EEE 3394 Electronic Materials
President UniversityErwin SitompulSDP 8/1 Dr.-Ing. Erwin Sitompul President University Lecture 8 Semiconductor Device Physics
EE130/230A Discussion 6 Peng Zheng.
Introduction to semiconductor technology. Outline –4 Excitation of semiconductors Optical absorption and excitation Luminescence Recombination Diffusion.
 P-N Junction Diodes  Current Flowing through a Diode I-V Characteristics Quantitative Analysis (Math, math and more math)
President UniversityErwin SitompulSDP 6/1 Dr.-Ing. Erwin Sitompul President University Lecture 6 Semiconductor Device Physics
President UniversityErwin SitompulSDP 4/1 Lecture 4 Semiconductor Device Physics Dr.-Ing. Erwin Sitompul President University
pn Junction Diodes: I-V Characteristics
MOS Device Physics and Designs Chap. 3 Instructor: Pei-Wen Li Dept. of E. E. NCU 1 Chap 3. P-N junction  P-N junction Formation  Step PN Junction  Fermi.
Chapter 4 Excess Carriers in Semiconductors
Notes 27 February 2013.
Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)
1 Prof. Ming-Jer Chen Department of Electronics Engineering National Chiao-Tung University Nov. 5, 2012 DEE4521 Semiconductor Device Physics Lecture 5.
Univ. of Inchon 6 pn Junction Diode : I-V Characteristics 반도체 소자 연구실 박 종 태
6 pn Junction Diode : I-V Characteristics. 6.1 THE IDEAL DIODE EQUATION Qualitative Derivation.
Issued: May 5, 2010 Due: May 12, 2010 (at the start of class) Suggested reading: Kasap, Chapter 5, Sections Problems: Stanford University MatSci.
CSE251 CSE251 Lecture 2 and 5. Carrier Transport 2 The net flow of electrons and holes generate currents. The flow of ”holes” within a solid–state material.
Lecture 5 OUTLINE Semiconductor Fundamentals (cont’d) – Carrier diffusion Diffusion current Einstein relationship – Generation and recombination Excess.
Chapter6. Carrier Transport Drift Definition-visualization Drift : Charged particle motion in response to an applied electric field.
Lecture 11 OUTLINE pn Junction Diodes (cont’d) – Narrow-base diode – Junction breakdown Reading: Pierret 6.3.2, 6.2.2; Hu 4.5.
Lecture 10 OUTLINE pn Junction Diodes (cont’d)
Announcements HW1 is posted, due Tuesday 9/4
Lecture 5 OUTLINE Semiconductor Fundamentals (cont’d)
Lecture #8 OUTLINE Generation and recombination
Chapter 3, Current in Homogeneous Semiconductors
Direct and Indirect Semiconductors
Lecture #9 OUTLINE Continuity equations
Lecture 5 OUTLINE Semiconductor Fundamentals (cont’d)
pn Junction Diodes: I-V Characteristics
Lecture #18 OUTLINE pn junctions (cont’d)
Deviations from the Ideal I-V Behavior
Lecture 11 OUTLINE pn Junction Diodes (cont’d) Narrow-base diode
Lecture 10 OUTLINE pn Junction Diodes (cont’d)
Lecture 11 OUTLINE pn Junction Diodes (cont’d) Narrow-base diode
Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)
Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)
Lecture 11 OUTLINE pn Junction Diodes (cont’d) Narrow-base diode
Lecture 10 OUTLINE pn Junction Diodes (cont’d)
Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)
Presentation transcript:

Lecture #9 OUTLINE Continuity equations Minority carrier diffusion equations Minority carrier diffusion length Quasi-Fermi levels Read: Sections 3.4, 3.5

Spring 2007EE130 Lecture 9, Slide 2 Derivation of Continuity Equation Consider carrier-flux into/out-of an infinitesimal volume: JN(x)JN(x)J N (x+dx) dx Area A, volume Adx

Spring 2007EE130 Lecture 9, Slide 3 Continuity Equations:

Spring 2007EE130 Lecture 9, Slide 4 Derivation of Minority Carrier Diffusion Equation The minority carrier diffusion equations are derived from the general continuity equations, and are applicable only for minority carriers. Simplifying assumptions: –The electric field is small, such that in p-type material in n-type material –n 0 and p 0 are independent of x (uniform doping) –low-level injection conditions prevail

Spring 2007EE130 Lecture 9, Slide 5 Starting with the continuity equation for electrons:

Spring 2007EE130 Lecture 9, Slide 6 Carrier Concentration Notation The subscript “n” or “p” is used to explicitly denote n-type or p-type material, e.g. p n is the hole (minority-carrier) concentration in n- type material n p is the electron (minority-carrier) concentration in n-type material Thus the minority carrier diffusion equations are

Spring 2007EE130 Lecture 9, Slide 7 Simplifications (Special Cases) Steady state: No diffusion current: No R-G: No light:

Spring 2007EE130 Lecture 9, Slide 8 L P is the hole diffusion length: Example Consider the special case: –constant minority-carrier (hole) injection at x=0 –steady state; no light absorption for x>0

Spring 2007EE130 Lecture 9, Slide 9 The general solution to the equation is where A, B are constants determined by boundary conditions: Therefore, the solution is

Spring 2007EE130 Lecture 9, Slide 10 Physically, L P and L N represent the average distance that minority carriers can diffuse into a sea of majority carriers before being annihilated. Example: N D =10 16 cm -3 ;  p = s Minority Carrier Diffusion Length

Spring 2007EE130 Lecture 9, Slide 11 Whenever  n =  p  0, np  n i 2. However, we would like to preserve and use the relations: These equations imply np = n i 2, however. The solution is to introduce two quasi-Fermi levels F N and F P such that Quasi-Fermi Levels

Spring 2007EE130 Lecture 9, Slide 12 Example: Quasi-Fermi Levels Consider a Si sample with N D = cm -3 and  n =  p = cm -3. What are p and n ? What is the np product ?

Spring 2007EE130 Lecture 9, Slide 13 Find F N and F P :

Spring 2007EE130 Lecture 9, Slide 14 Summary The continuity equations are established based on conservation of carriers, and therefore are general: The minority carrier diffusion equations are derived from the continuity equations, specifically for minority carriers under certain conditions (small E- field, low-level injection, uniform doping profile):

Spring 2007EE130 Lecture 9, Slide 15 The minority carrier diffusion length is the average distance that a minority carrier diffuses before it recombines with a majority carrier: The quasi-Fermi levels can be used to describe the carrier concentrations under non-equilibrium conditions: