= Areas with graphene Scratch Mark For Gating Device Nearest to Gating scratch = TOP Device Furthest from Gating scratch = Bottom Dneff 7-27-2015 Co-3970.

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Presentation transcript:

= Areas with graphene Scratch Mark For Gating Device Nearest to Gating scratch = TOP Device Furthest from Gating scratch = Bottom Dneff Co-3970 application to UCI Burke lab graphene test circuits sent by Phi

This is Phi’s summary of all the devices he sent us. We used one for this report. Sheet resistance is a special case of resistivity for a uniform sheet thickness. Commonly, resistivity (also known as bulk resistance, specific electrical resistance, or volume resistivity) is in units of Ω∙m, which is more completely stated in units of Ω∙m 2 /m (Ω∙area/length). When divided by the sheet thickness, ∙1/m, the units are Ω∙m∙(m/m)∙1/m = Ω. The term "(m/m)" cancels, but represents a special "square" situation yielding an answer in ohms. An alternative, common unit is "ohms per square" (denoted "Ω/sq" or " "), which is dimensionally equal to an ohm, but is exclusively used for sheet resistance. This is an advantage, because sheet resistance of 1 Ω could be taken out of context and misinterpreted as bulk resistance of 1 ohm, whereas sheet resistance of 1 Ω/sq cannot thusly be misinterpreted. ohms WIKI sheet resistance of any square sheet regardless of size is the same because of the 4 corner measurement system?

_1 Top Device Bottom Device Non-Usable

_1 All images and dna applications were to TOP device as seen below Before treatment1uL drops of 2.5nM dna origami ‘cleared’ areas of graphene after rinsing with water and blowing with N2 gas

Before dna treatment This is chip orientation used for AFM and optical imaging center of graphene Edge of graphene

Before dna treatment This is chip orientation used for AFM and optical imaging This imaged taken before dna treatment for correlation of scan areas

This is the diafiltered dna origami included in the package shipped (here on mica). This material was applied to graphene as 1uL drop of dna origami (~2.5nM concentration), wait 30 seconds then rinse with ~20uL water and blow dry.

This is orientation used for AFM and optical imaging, measurements are from indicated corner of electrodes to center of dna deposition This imaged taken before dna treatment for correlation of scan areas dna drop center here

AFM After dna treatment This is chip orientation used for AFM and optical imaging This imaged taken before dna treatment for correlation of scan areas This is dna origami, I think on graphene, not Si

Optical images of top device after dna deposition and rinsing with water. Note 2 zones of change in optical appearance of graphene at right – one where dna was applied and one where rinse water resided just prior to blowing. Both images were taken AFTER rinse and blow dry. The dna ‘spot’ (red) was/is still visible even after rinse. These zones could help you guide your Raman spot? Move the red line out of the way if you cannot see the difference. Smaller dna zone Larger water rinse zone dna and water Neither dna nor water only water