1 November 11, 2015 The Evolution of Memory Architecture November 11, 2015 Dr. Amit Berman Senior Engineer, Samsung.

Slides:



Advertisements
Similar presentations
Field Programmable Gate Array
Advertisements

I/O Management and Disk Scheduling
COEN 180 Flash Memory.
Flash storage memory and Design Trade offs for SSD performance
Computer Organization and Architecture
Semiconductor Memory Design. Organization of Memory Systems Driven only from outside Data flow in and out A cell is accessed for reading by selecting.
+ CS 325: CS Hardware and Software Organization and Architecture Internal Memory.
11/29/2004EE 42 fall 2004 lecture 371 Lecture #37: Memory Last lecture: –Transmission line equations –Reflections and termination –High frequency measurements.
Digital Integrated Circuits© Prentice Hall 1995 Memory SEMICONDUCTOR MEMORIES.
S. Reda EN160 SP’07 Design and Implementation of VLSI Systems (EN0160) Lecture 32: Array Subsystems (DRAM/ROM) Prof. Sherief Reda Division of Engineering,
Digital Integrated Circuits© Prentice Hall 1995 Memory SEMICONDUCTOR MEMORIES.
1: Operating Systems Overview
S. Reda EN160 SP’07 Design and Implementation of VLSI Systems (EN0160) Lecture 31: Array Subsystems (SRAM) Prof. Sherief Reda Division of Engineering,
COMPUTER ARCHITECTURE & OPERATIONS I Instructor: Hao Ji.
Yu Cai1, Erich F. Haratsch2 , Onur Mutlu1 and Ken Mai1
Flash Memory A type of EEPROM (Electrically-Erasable programmable Read-Only Memory) an older type of memory that used UV-light to erase Non-volatile,
Don’t Forget the Memory… Dean Klein, VP Memory System Development Micron Technology, Inc.
Operating System Review September 10, 2012Introduction to Computer Security ©2004 Matt Bishop Slide #1-1.
/38 Lifetime Management of Flash-Based SSDs Using Recovery-Aware Dynamic Throttling Sungjin Lee, Taejin Kim, Kyungho Kim, and Jihong Kim Seoul.
1 Review Of “A 125 MHz Burst-Mode Flexible Read While Write 256Mbit 2b/c 1.8V NOR Flash Memory” Adopted From: “ISSCC 2005 / SESSION 2 / NON-VOLATILE MEMORY.
FAMU-FSU College of Engineering 1 Computer Architecture EEL 4713/5764, Fall 2006 Dr. Linda DeBrunner Module #17—Main Memory Concepts.
Lecture 16: Storage and I/O EEN 312: Processors: Hardware, Software, and Interfacing Department of Electrical and Computer Engineering Spring 2014, Dr.
Chapter 3 Internal Memory. Objectives  To describe the types of memory used for the main memory  To discuss about errors and error corrections in the.
Economic & Market Recap May Equity and Fixed Income Markets.
I/O Computer Organization II 1 Introduction I/O devices can be characterized by – Behavior: input, output, storage – Partner: human or machine – Data rate:
1 Amit Berman Reliable Architecture for Flash Memory Joint work with Uri C. Weiser, Acknowledgement: thanks to Idit Keidar Department of Electrical Engineering,
Design of Advanced Erase Mechanism for NOR Flash EEPROM Amit Berman, June 2006 Intel Corporation.
Computer Memory Storage Decoding Addressing 1. Memories We've Seen SIMM = Single Inline Memory Module DIMM = Dual IMM SODIMM = Small Outline DIMM RAM.
Computer Architecture Lecture 32 Fasih ur Rehman.
By Edward A. Lee, J.Reineke, I.Liu, H.D.Patel, S.Kim
Computer Architecture Lecture 24 Fasih ur Rehman.
Multilevel Caches Microprocessors are getting faster and including a small high speed cache on the same chip.
CMPEN 411 VLSI Digital Circuits Spring 2009 Lecture 24: Peripheral Memory Circuits [Adapted from Rabaey’s Digital Integrated Circuits, Second Edition,
Carnegie Mellon University, *Seagate Technology
Dynamic Memory Cell Wordline
EE 466/586 VLSI Design Partha Pande School of EECS Washington State University
Data Retention in MLC NAND FLASH Memory: Characterization, Optimization, and Recovery. 서동화
Low Power SRAM VLSI Final Presentation Stephen Durant Ryan Kruba Matt Restivo Voravit Vorapitat.
Chapter 5 Internal Memory. contents  Semiconductor main memory - organisation - organisation - DRAM and SRAM - DRAM and SRAM - types of ROM - types of.
High Performance Computing1 High Performance Computing (CS 680) Lecture 2a: Overview of High Performance Processors * Jeremy R. Johnson *This lecture was.
Computer Architecture Chapter (5): Internal Memory
대용량 플래시 SSD의 시스템 구성, 핵심기술 및 기술동향
1 Paolo Bianco Storage Architect Sun Microsystems An overview on Hybrid Storage Technologies.
1 The Power of Dividend Growth DISCLOSURE This information has been provided by RBC Global Asset Management Inc. (RBC GAM) and is for informational.
Chapter 5 - Internal Memory 5.1 Semiconductor Main Memory 5.2 Error Correction 5.3 Advanced DRAM Organization.
William Stallings Computer Organization and Architecture 6th Edition
COS 518: Advanced Computer Systems Lecture 8 Michael Freedman
QUANTUM COMPUTING: Quantum computing is an attempt to unite Quantum mechanics and information science together to achieve next generation computation.
SDM5A-M 7P/180D LP2(H).
Architecture & Organization 1
Maintaining Data Integrity in Programmable Logic in Atmospheric Environments through Error Detection Joel Seely Technical Marketing Manager Military &
SATA 6Gb/s SSD Controller Solution Supporting 3D TLC NAND
Introduction I/O devices can be characterized by I/O bus connections
Rob Davis, Mellanox Ilker Cebeli, Samsung
Vulnerabilities in MLC NAND Flash Memory Programming: Experimental Analysis, Exploits, and Mitigation Techniques Yu Cai, Saugata Ghose, Yixin Luo, Ken.
Architecture & Organization 1
COS 518: Advanced Computer Systems Lecture 8 Michael Freedman
William Stallings Computer Organization and Architecture 7th Edition
BIC 10503: COMPUTER ARCHITECTURE
Semiconductor Memories
Compal Electronics, Inc. 1Q19 Consolidated Financial Results
COS 518: Advanced Computer Systems Lecture 9 Michael Freedman
Presentation transcript:

1 November 11, 2015 The Evolution of Memory Architecture November 11, 2015 Dr. Amit Berman Senior Engineer, Samsung

2 November 11, 2015 Legal Disclaimer This presentation is intended to provide information concerning SSD and memory industry. We do our best to make sure that information presented is accurate and fully up-to-date. However, the presentation may be subject to technical inaccuracies, information that is not up-to-date or typographical errors. As a consequence, Samsung does not in any way guarantee the accuracy or completeness of information provided on this presentation. The information in this presentation or accompanying oral statements may include forward- looking statements. These forward-looking statements include all matters that are not historical facts, statements regarding the Samsung Electronics' intentions, beliefs or current expectations concerning, among other things, market prospects, growth, strategies, and the industry in which Samsung operates. By their nature, forward-looking statements involve risks and uncertainties, because they relate to events and depend on circumstances that may or may not occur in the future. Samsung cautions you that forward looking statements are not guarantees of future performance and that the actual developments of Samsung, the market, or industry in which Samsung operates may differ materially from those made or suggested by the forward-looking statements contained in this presentation or in the accompanying oral statements. In addition, even if the information contained herein or the oral statements are shown to be accurate, those developments may not be indicative developments in future periods.

3 November 11, 2015 Memory Hierarchy CPU SSD PCH IMC DIMM CACHE

4 November 11, 2015 Memory Hierarchy CPU SSD PCH IMC DIMM CACHE SRAM pSec,MB DRAM nSec,GB Flash μSec,TB

5 November 11, 2015 Memory System 0 External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Memory Module Comp. & Enc.

6 November 11, 2015 Figures of Merit 0 External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Comp. & Enc.

7 November 11, 2015 Figures of Merit 0 External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Comp. & Enc.

8 November 11, 2015 Device Material – floating gate transistor, charge trap, phase-change, ReRAM, STT-MRAM Scaling – Cost of making smaller feature size Multi-bit per cell – Increases density and reduces performance

9 November 11, 2015 Device Material – floating gate transistor, charge trap, phase-change, ReRAM, STT-MRAM Scaling – Cost of making smaller feature size Multi-bit per cell – Increases density and reduces performance Trend: CT Trend: slow lithography steps Trend: higher BPC

10 November 11, 2015 Figures of Merit 0 External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Comp. & Enc.

11 November 11, 2015 Figures of Merit 0 External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Array Architecture Comp. & Enc.

12 November 11, 2015 Array Architecture NOR – Fast access to each cell, but low density NAND – High density, but slow performance (have to precharge and evaluate bitline) Vertical 3D / Cross-Point – Higher density than NAND and performance challenges

13 November 11, 2015 Array Architecture NOR – Fast access to each cell, but low density NAND – High density, but slow performance (have to precharge and evaluate bitline) Vertical 3D / Cross-Point – Higher density than NAND and performance challenges Trend: RAM close to processor Trend: Multi-Layer far form processor

14 November 11, 2015 Figures of Merit 0 External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Array Architecture Comp. & Enc.

15 November 11, 2015 Figures of Merit 0 External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Array Architecture Access Organization Comp. & Enc.

16 November 11, 2015 Access Organization # of Planes/Banks – More planes increase (part of) parallel instruction execution, but reduce bit density (area penalty) Wordline Size – Longer wordline increases write performance due to simultaneous access to more cells, but worsen read latency due to increased IR drop and inter-bitline coupling

17 November 11, 2015 Access Organization # of Planes/Banks – More planes increase (part of) parallel instruction execution, but reduce bit density (area penalty) Wordline Size – Longer wordline increases write performance due to simultaneous access to more cells, but worsen read latency due to increased IR drop and inter-bitline coupling Trend: Slow increase Trend: Slow increase

18 November 11, 2015 Figures of Merit 0 External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Array Architecture Access Organization Comp. & Enc.

19 November 11, 2015 Figures of Merit 0 External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Array Architecture Access Organization Modulation & Preprocessing Comp. & Enc.

20 November 11, 2015 Modulation Techniques DTA/ATD conversion – Transforming data to cell level (ISPP, Sensing) Data pre-processing – Algorithms that acquire soft device characteristics

21 November 11, 2015 Modulation Techniques DTA/ATD conversion – Transforming data to cell level (ISPP, Sensing) Data pre-processing – Algorithms that acquire soft device characteristics Trend: increased complexity Trend: increased complexity

22 November 11, 2015 Figures of Merit 0 External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Array Architecture Access Organization Modulation & Preprocessing Comp. & Enc.

23 November 11, 2015 Figures of Merit 0 External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Array Architecture Access Organization Modulation & Preprocessing Reliability Algorithm Comp. & Enc.

24 November 11, 2015 Reliability Algorithm ECC – Longer codewords lead to better correction capability but reduce read performance Signal Processing – Estimation and movement of reference voltage for sensing

25 November 11, 2015 Reliability Algorithm ECC – Longer codewords lead to better correction capability but reduce read performance Signal Processing – Estimation and movement of reference voltage for sensing Trend: next step of LDPC Trend: increased estimation complexity

26 November 11, 2015 Figures of Merit 0 Comp. & Enc. External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Array Architecture Access Organization Modulation & Preprocessing Reliability Algorithm

27 November 11, 2015 Figures of Merit 0 Comp. & Encr. External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Array Architecture Access Organization Modulation & Preprocessing Reliability Algorithm Reduction & Security

28 November 11, 2015 Data Reduction & Security Algorithms Compression and Deduplication – Performance-constrained low area compression and deduplication Encryption – Standard AES

29 November 11, 2015 Data Reduction & Security Algorithms Compression and Deduplication – Performance-constrained low area compression and deduplication Encryption – Standard AES Trend: Conventional AES Trend: Advanced Constrained Compressor

30 November 11, 2015 Figures of Merit 0 Comp. & Encr. External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Array Architecture Access Organization Modulation & Preprocessing Reliability Algorithm Reduction & Security

31 November 11, 2015 Figures of Merit 0 Comp. & Encr. External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Array Architecture Access Organization Modulation & Preprocessing Reliability Algorithm Reduction & Security System Management

32 November 11, 2015 System Algorithms Scheduling – Instruction assignment according to workload Wear Leveling – Block level statistics, L2P table management Interface – SATA, eSATA, SAS, PCIe, NVMe, eMMC, UFS

33 November 11, 2015 System Algorithms Scheduling – Instruction assignment according to workload Wear Leveling – Block level statistics, L2P table management Interface – SATA, eSATA, SAS, PCIe, NVMe, eMMC, UFS Trend: High-Q balancing Trend: Conventional WL Trend: Migration to NVMe/UFS

34 November 11, 2015 Figures of Merit 0 Comp. & Encr. External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Array Architecture Access Organization Modulation & Preprocessing Reliability Algorithm Reduction & Security System Management

35 November 11, 2015 Putting it all together 0 Comp. & Encr. External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Array Architecture Access Organization Modulation & Preprocessing Reliability Algorithm Reduction & Security System Management

36 November 11, 2015 Putting it all together 0 Comp. & Encr. External Controller WL BL DEC Buffer 00 AnalogControl Logic Management ECC & SP Device Array Architecture Access Organization Modulation & Preprocessing Reliability Algorithm Reduction & Security System Management

37 November 11, 2015 Summary Device : CT MLC+ Architecture : 3D/Cross-Point Organization : WL+, #P+ Modulation : Device-Aware ISPP/Sensing ECC : LDPC+ Compression : Constrained Compressor Management: Large queue NVMe/UFS

38 November 11, 2015 Q&A Session Thank You