Microfabrication CHEM-E5115

Slides:



Advertisements
Similar presentations
Carbon nanotube field effect transistors (CNT-FETs) have displayed exceptional electrical properties superior to the traditional MOSFET. Most of these.
Advertisements

INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #6.
Fabrication of p-n junction in Si Silicon wafer [1-0-0] Type: N Dopant: P Resistivity: Ω-cm Thickness: µm.
Tutorials on Systems Miniaturization Luiz Otávio S. Ferreira - LNLS November 28, 2001.
Introduction to CMOS VLSI Design Lecture 0: Introduction
For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN © 2002.
For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN © 2002.
Bulk MEMS 2014, Part 1 Types of MEMS Bulk MEMS: anisotropic wet or DRIE of bulk silicon SOI MEMS: DRIE or wet etching of SOI.
Project Title Name : University: Guide :. Introduction Project – what is new / what are you analyzing from this work – Example: Solar cell – increase.
1 Microfabrication Technologies Luiz Otávio Saraiva Ferreira LNLS
MSE 227: Introduction to Materials Science & Engineering
Introduction to microfabrication, chapter 1
Nano electro mechanical systems (nems)
Rochester Institute of Technology - MicroE © REP/LFF 8/17/2015 Metal Gate PMOS Process EMCR201 PMOS page-1  10 Micrometer Design Rules  4 Design Layers.
7-Sep-15 Physics 1 (Garcia) SJSU Conceptual Physics (Physics 1) Prof. Alejandro Garcia Spring 2007.
McGill Nanotools Microfabrication Processes
Surface MEMS 2014 Part 1
INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #2. Chip Fabrication  Silicon Ingots  Wafers  Chip Fabrication Steps (FEOL, BEOL)  Processing Categories 
Why do we put the micro in microelectronics?. Why Micro? 1.Lower Energy and Resources for Fabrication 2.Large Arrays 3.Minimally Invasive 4.Disposable.
COMPE 226 Data Structures 2015 Fall Murat KARAKAYA Department of Computer Engineering.
Nano/Micro Electro-Mechanical Systems (N/MEMS) Osama O. Awadelkarim Jefferson Science Fellow and Science Advisor U. S. Department of State & Professor.
Welcome to EE 130/230A Integrated Circuit Devices
1 Absolute Pressure Sensors Z. Celik-Butler, D. Butler and M. Chitteboyina Nanotechnology Research and Teaching Facility University of Texas at Arlington.
NANOMETER SCALE LITHOGRAPHY DANIEL BERNARD – BENJAMEN STROBELAPRIL 29, 2013 EE 4611 – STANLEY G. BURNS NANOMETER SCALE LITHOGRAPHY, ALSO KNOWN AS NANOLITHOGRAPHY,
Measurements of Piezoresistive Coefficients in Lightly Doped (111) Silicon Chun Hyung Cho & John Sunwoo Electrical & Computer Engineering Auburn University.
Principles of Financial and Managerial Accounting II Spring Semester Orientation.
Finance. Overview of Financial Management Introduction Keys to Success Class Structure - Syllabus Text – Financial Management: Core Concepts – 3 rd Ed.
Text Book: Silicon VLSI Technology Fundamentals, Practice and Modeling Authors: J. D. Plummer, M. D. Deal, and P. B. Griffin Class: ECE 6466 “IC Engineering”
Introduction to CMOS VLSI Design CMOS Fabrication and Layout Harris, 2004 Updated by Li Chen, 2010.
INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #3. Diffusion  Introduction  Diffusion Process  Diffusion Mechanisms  Why Diffusion?  Diffusion Technology.
EE 5340 Semiconductor Device Theory Lecture 07 – Spring 2011 Professor Ronald L. Carter
By: Joaquin Gabriels November 24 th,  Overview of CMOS  CMOS Fabrication Process Overview  CMOS Fabrication Process  Problems with Current CMOS.
Welcome to EE 130/230M Integrated Circuit Devices Instructors: Prof. Tsu-Jae King Liu and Dr. Nuo Xu (tking and TA:Khalid Ashraf.
Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 3, slide 1 Introduction to Electronic Circuit Design.
ICS202 Data Structures King Fahd University of Petroleum & Minerals College of Computer Science & Engineering Information & Computer Science Department.
ISAT 436 Micro-/Nanofabrication and Applications Photolithography David J. Lawrence Spring 2004.
CORPORATE INSTITUTE OF SCIENCE & TECHNOLOGY, BHOPAL DEPARTMENT OF ELECTRONICS & COMMUNICATIONS NMOS FABRICATION PROCESS - PROF. RAKESH K. JHA.
1 MPW Design Introduction Course - Module 4 Process Description Part II Tyre pressure sensor (SensoNor)
CMOS VLSI Fabrication.
MEMS 2016 Part 2 (Chapters 29 & 30)
ELEC-E Semiconductor Devices Spring 2016 Course overview Hele Savin Ville Vähänissi Alessandro Inglese Department of Micro and Nanosciences.
(Chapters 29 & 30; good to refresh 20 & 21, too)
MICRO-STRIP METAL DETECTOR FOR BEAM DIAGNOSTICS PRINCIPLE OF OPERATION Passing through metal strips a beam of charged particles or synchrotron radiation.
Microfabrication Home exercise #3 Return by Feb 21st, 22 o’clock
Introduction to microfabrication, chapter 1 Figures from: Franssila: Introduction to Microfabrication unless indicated otherwise.
Microfabrication for fluidics, basics and silicon
Scaling
Process integration 2: double sided processing, design rules, measurements
SEMICONDUCTOR DEVICE FABRICATION
Wafer bonding (Chapter 17) & CMP (Chapter 16)
Home 2 Return by January 29th, o’clock Into Return box 2 in MyCourses.
Nanotechnologies for Electronics
Microfabrication Home 3 exercise Return by Feb 5th, 22 o’clock
Microfabrication Home exercise 1
Microfabrication CHEM-E5115 sami. fi victor
The CSOI approach for integrated micro channels
Electron-beam lithography with the Raith EBPG
Temperature Sensors on Flexible Substrates
Characterisation of the back-etched stack
SCUBA-2 Detector Technology Development
EE 5340 Semiconductor Device Theory Lecture 7 - Fall 2010
Electron-beam lithography with the Raith EBPG
Lecture #25 OUTLINE Device isolation methods Electrical contacts to Si
Process flow part 2 Develop a basic-level process flow for creating a simple MEMS device State and explain the principles involved in attaining good mask.
Production and test of Si sensors for W-Si sandwich calorimeter
SILICON MICROMACHINING
Device Fabrication And Diffusion Overview
• Very pure silicon and germanium were manufactured
Device Fabrication And Diffusion Overview
Presentation transcript:

Microfabrication CHEM-E5115

Goals After the course you should be able to design simple microfabrication processes and analyze complex processes. The devices look like these:

You must understand: Microscale dimensions -is 4 nm film thickness possible ? -is 100 nm/min high or low rate? -is 300 MPa high or low stress ? -is 20  -cm resistivity OK for metal ? Materials -silicon wafers -thin films of SiO 2, SiN x, Al, W, Cu, Au, Pt, …… Processing of materials at microscale: -patterning -doping -thin film deposition -bonding

Learning Book -Introduction to Microfabrication -provides the facts Lectures -show how to think about the facts -show how to think with the facts -are no substitute for reading the book ! Exercises -develop feeling for orders of magnitude -check understanding of basic concepts -get acquainted with fabrication processes Lab demo -hands-on microfabrication

The book Introduction to Microfabrication, 2 nd edition (John Wiley, 2010) The course covers chapters 1-6, 9, 11-17, 20,21, 25-31, (ca. 60% of the book). First edition 2004 can also be used. Available as e-book via Aalto library: Printed book from amazon (40£ used/50£ new + mail)

Homework exercises Published on Tuesdays at 12 noon in Moodle Return to MyCourses by following Sunday 10 pm (22.00) pdf best format, MS Word also acceptable Late return box will be provided, but 1 point reduced Assistants will check and grade answers In Tuesday exercise session solutions are presented on board by the students (selected by the assistant from the best solutions)

On-the-spot exercises Group work in groups of 3-4 persons 2 hour session (starts immediately after the lecture  you have to read the related book chapters before the lecture !) 1 hour for group work and 1 hour for presentations Maximum 4 points, same for all group members

Examples of exam questions Compare optical lithography and electron beam lithography. Explain step-by-step how the micro hot plate shown on top right was fabricated. Explain step-by-step how the photodiode shown on the bottom right was fabricated. The sensor is a wet etched silicon membrane device (20 µm membrane thickness). Membrane size is 1 mm*1 mm. How many good chips do you get from a 100 mm wafer? The cost of wafer processing is taken as 2 €/cm 2. How much does a single sensor cost if silicon chip cost is 30% of total sensor cost ? Chemical-mechanical polishing.

Exam cheat sheet You will have a 4-page cheat sheet about microfabrication available at the exam It contains most relevant facts Mistakes about facts that are in the cheat sheet will be aggressively graded

Assessment Exam: 60 p: 6 questions, 5 must be answered (40% minimum required to pass) Homework exercises: 36 p. -(40% minimum required to pass) Group work: 24 points -(40% minimum required to pass) Total: 120 p. (considerable bonus possibility !) Tentative scale: PointsGrade

Related courses SPRING TERM 2016 ELEC-E Nanotechnology, ELEC-E Optoelectronics, ELEC-E Photonics, CHEM-E Thin Film Technology, CHEM-L Ultrathin Films, CHEM-E Microfluidics and BioMEMS, ELEC-E Semiconductor Devices, FALL 2016 CHEM-E5225 Electron Microscopy PHYS-E0424 – Nanophysics CHEM-L2210 Thin Film Technology ELEC-E8713 Materials and microsystems integration