Phase Change Memory

Phase change memory 1 Some groups have been directing a lot of research towards attempting to find viable material alternatives to Ge2Sb2Te5 (GST), with mixed success, while others have developed the idea of using a GeTe - Sb2Te3 superlattice in order to achieve non thermal phase changes by simply changing the coordination state of the Germanium atoms with a laser pulse, and this new Interfacial phase change memory (IPCM) has had many successes and continues to be the site of much active research

Phase change memory 1 Leon Chua has argued that all 2-terminal non-volatile memory devices including phase change memory should be considered memristors. Stan Williams of HP Labs has also argued that phase change memory should be considered to be a memristor. Such claims, however, seem not to be justified given that the memristor theory is in itself open to question.

Phase change memory - Background 1 A cinematographic study in 1970 established that the phase change memory mechanism in chalcogenide glass involves electric-field-induced crystalline filament growth.Electric-Field Induced Filament Formation in As-Te-Ge Semiconductor C.H

Phase change memory - PRAM vs. Flash 1 PRAM devices also degrade with use, for different reasons than Flash, but degrade much more slowly. A PRAM device may endure around 100 million write cycles.[ sid=6371 Intel to Sample Phase Change Memory This Year] PRAM lifetime is limited by mechanisms such as degradation due to GST thermal expansion during programming, metal (and other material) migration, and other mechanisms still unknown.

Phase change memory - Intel 90 nm device 1 In June 2011, IBM announced that they had created stable, reliable, multi-bit phase change memory with high performance and stability.

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