D. Henry / CEA-Leti-Minatec Contibuting authors : A. Berthelot (LETI) / R. Cuchet (LETI) / J. Alozy (CERN) / M. Campbell (CERN) AIDA Meeting / 08 & 09th.

Slides:



Advertisements
Similar presentations
Silicon Technical Specifications Review General Properties Geometrical Specifications Technology Specifications –Mask –Test Structures –Mechanical –Electrical.
Advertisements

BEOL Al & Cu.
Center for Materials and Electronic Technologies
3D PACKAGING SOLUTIONS FOR FUTURE PIXEL DETECTORS Timo Tick – CERN
WP6 interconnect technology part
SOIMUMPs Process Flow Keith Miller Foundry Process Engineer.
Tom McMullen Week 6 11/3/2013 – 15/3/2013. LETI wafer thinning project flow Phase 1 IDProject NameOwnerDaysStartEnd 3-Feb10-Feb17-Feb24-Feb3-Mar10-Mar17-Mar24-Mar31-Mar5-Apr12-Apr19-Apr26-Apr.
3D technologies at Leti: Application to high energy CMOS sensors
Connectors 13/03/2013Collaboration meeting CERN - CSEM1.
20th RD50 Workshop (Bari)1 G. PellegriniInstituto de Microelectrónica de Barcelona G. Pellegrini, C. Fleta, M. Lozano, D. Quirion, Ivan Vila, F. Muñoz.
Chip Carrier Package as an Alternative for Known Good Die
Status and outlook of the Medipix3 TSV project
J. Salonen, “Flip Chip Bumping Process at VTT" [presentation for GPG], 16-March-2007 Flip Chip/Bumping Process at VTT Last modified March 16, 2007 By Jaakko.
M.Friedl, C.Irmler, M.Pernicka HEPHY Vienna
McGill Nanotools Microfabrication Processes
Application of through-silicon-via (TSV) technology to making of high-resolution CMOS image sensors Name: Qian YU Student ID:
3D Integration activities AIDA WP3 Frascati 2013 Abdenour LOUNIS, AIDA Frascati 2013 Abdenour LOUNIS, G. Martin Chassard, Damien Thienpont, Jeanne Tong-Bong.
Fabrication of Active Matrix (STEM) Detectors
1 Moore’s Law – the Z dimension Sergey Savastiouk, Ph.D. April 12, 2001.
Fabian Hügging – University of Bonn – February WP3: Post processing and 3D Interconnection M. Barbero, L. Gonella, F. Hügging, H. Krüger and.
G. Parès – A. Berthelot CEA-Leti-Minatec GU project status.
D. Henry / CEA-Leti-Minatec Contibuting authors : A. Berthelot / R. Cuchet / G. Simon / Y. Lamy / P. Leduc / J. Charbonnier AIDA Meeting / 08 & 09th of.
Lutz Hofmann Fraunhofer ENAS (Germany)
Comparison of various TSV technology
Meng Guo, Donald Pfettscher, Kimberly Pollard, Richard Peters, Travis Acra Dynaloy LLC, a subsidiary of Eastman Chemical Company Thierry Lazerand, Kenneth.
From hybrids pixels to smart vertex detectors using 3D technologies 3D microelectronics technologies for trackers.
Report on TIPP D-IC Satellite Meeting Carl Grace June 21, 2011.
P. Riedler- GGT Meeting 3/4/20061 Status of Sensor Irradiation and Bump Bonding P. Riedler, G. Stefanini P. Dalpiaz, M. Fiorini, F. Petrucci.
10/09/2002 P. Roy G. Pellegrini, A. Al-Ajili, L. Haddad, J. Melone, V. O'Shea, K.M. Smith, V. Wright, M. Rahman Patrick Roy Study of irradiated 3D detectors.
Fully depleted MAPS: Pegasus and MIMOSA 33 Maciej Kachel, Wojciech Duliński PICSEL group, IPHC Strasbourg 1 For low energy X-ray applications.
Pixel 2000 Workshop Christian Grah University of Wuppertal June 2000, Genova O. Bäsken K.H.Becks.
Tom McMullen Period 3 Week 9 8/4/2013 – 12/4/2013.
Foundry Characteristics
Silicon detector processing and technology: Part II
MIT Lincoln Laboratory NU Status-1 JAB 11/20/2015 Advanced Photodiode Development 7 April, 2000 James A. Burns ll.mit.edu.
DESIGN CONSIDERATIONS FOR CLICPIX2 AND STATUS REPORT ON THE TSV PROJECT Pierpaolo Valerio 1.
News on microstrip detector R&D —Quality assurance tests— Anton Lymanets, Johann Heuser 12 th CBM collaboration meeting Dubna, October
Atsuhiko Ochi Kobe University
H.-G. Moser MPI Munich Valerio Re INFN AIDA WP3 Summary 1 Status of milestones and deliverables Status of sub-projects Plans for the last year of AIDA.
IEEE Nuclear Science Symposium Roma Oct.2004
Tom McMullen Week 7 18/3/2013 – 22/3/2013. LETI wafer thinning project flow Phase 1 IDProject NameOwnerDaysStartEnd 3-Feb10-Feb17-Feb24-Feb3-Mar10-Mar17-Mar24-Mar31-Mar5-Apr12-Apr19-Apr26-Apr.
The Development of the Fabrication Process of Low Mass circuits Rui de Oliveira TS-DEM.
Tom McMullen Week 8 25/3/2013 – 29/3/2013. LETI wafer thinning project flow Phase 1 IDProject NameOwnerDaysStartEnd 3-Feb10-Feb17-Feb24-Feb3-Mar10-Mar17-Mar24-Mar31-Mar5-Apr12-Apr19-Apr26-Apr.
CERN/NA62 GigaTracKer Hybrid Module Manufacturing
Procurement Readiness Review : Detector Fabrication, Qualification & Assembly at India M D Ghodgaonkar Electronics Division, BARC, India.
Giulio Pellegrini 27th RD50 Workshop (CERN) 2-4 December 2015 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona 1 Status of.
G. Ruggiero / TOTEM 1 Si Edgeless Detectors in the RPs Edgeless detector (on the old “AP25 module”) active edges (“planar/3D”) planar tech. with CTS (Current.
1ICC Proprietary MEMS DEVICE WAFER LEVEL PACKAGING TECHNICAL PRESENTATION Customer Device Wafer.
Status report Pillar-1: Technology. The “Helmholtz-Cube” Vertically Integrated Detector Technology Replace standard sensor with: 3D and edgeless sensors,
Upgrade with Silicon Vertex Tracker Rachid Nouicer Brookhaven National Laboratory (BNL) For the PHENIX Collaboration Stripixel VTX Review October 1, 2008.
Low Mass Alice Pixel Bus Rui de Oliveira TE/MPE/EM 6/9/20161Rui de Oliveira Alice worshop.
The medipix3 TSV project
(Chapters 29 & 30; good to refresh 20 & 21, too)
Low Mass, Radiation Hard Vertex Detectors R. Lipton, Fermilab Future experiments will require pixelated vertex detectors with radiation hardness superior.
Workshop How to make a PCB
Infrastructure & issues and solutions for ATLAS Upgrade Hybrid/Module strip bonding Fred Doherty, Joe Ashby, Fiona McEwan & Calum Gray ATLAS Upgrade Module.
HV2FEI4 and 3D A.Rozanov CPPM 9 December 2011 A.Rozanov.
Infineon CoolIR2DieTM Power Module
New Mask and vendor for 3D detectors
Alternative process flows for reduction of steps
ALICE PD group meeting Andrea Francescon.
Micro-cooling devices for LHCb Velo CERN
Development of thin pixel modules using novel 3D Processing techniques 9th Trento Workshop, Genoa 2014 T.McMullen1, G.Pares2, L.Vignoud2, R.Bates1, C.Buttar1.
CERN & LAL contribution to AIDA2020 WP4 on interconnections: Pixel module integration using TSVs and direct laser soldering Malte Backhaus, Michael Campbell,
From: Recent Advances and New Trends in Flip Chip Technology
Report from CNM activities
ATLAS Upgrade Module Bonding Trials Using Glass Asics
Lecture #25 OUTLINE Device isolation methods Electrical contacts to Si
BONDING The construction of any complicated mechanical device requires not only the machining of individual components but also the assembly of components.
PiezoMEMS Foundry to Support Research Projects
Presentation transcript:

D. Henry / CEA-Leti-Minatec Contibuting authors : A. Berthelot (LETI) / R. Cuchet (LETI) / J. Alozy (CERN) / M. Campbell (CERN) AIDA Meeting / 08 & 09th of April D Integration Technology used for Hybrid Pixel Detectors : Medipix latest results

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 2  Introduction / Current status  TSV process flow  Technological results  Electical results  Conclusions / prospects Outline  Introduction / Current status  TSV process flow  Technological results  Electical results  Conclusions / prospects

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 3  Customer: CERN  Project start up:  June 2011  Objectives :  Fabrication of a read-out chip with TSV  Assembly of a particle detector on top of it  Proof of concept  Project status  1 st lot: µS6688P (2 wafers)  2 nd lot: µS6924P (3 wafers)  3rd lot: µS7394P (3 wafers)  First lot delivered on January 2012  not in specification  Third lot delivered on June 2012  OK  Dicing & pick out LETI & VTT  Dicing solution in october 2012  CERN electrical tests :  Preliminary (14 chips)  OK  Complete tests + detectors assy on going Medipix 3 project status (summary)

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 4 Outline  Introduction / Current status  TSV process flow  Technological results  Electical results  Conclusions / prospects

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 5  Bonding / Thinning  Bonding  Grinding/edge dicing  CMP Si  Front Side UBM  TiNiAu Deposition  Litho UBM  UBM etch  Back Side: TSV Last + RDL + Passivation + UBM  Litho TSV  TSV AR2 etch  SiON conf deposition  Etch back  SEED TiCu  Litho RDL  ECD Cu  Litho PASSIV  TiNiAu deposition  Litho UBM  UBM etch  Debonding / Dicing UBM TSV RDL UBM Medipix 3 process flow

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 6 Outline  Introduction / Current status  TSV process flow  Technological results  Electical results  Conclusions / prospects

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 7  Front Side  Front Side topology = 4µm  Alu/UBM contact resistance: Preclean + Ti / Ni / Au deposition  UBM litho: positive photo resist  Alignment on Top metal (Specs +/-1µm): Medipix 3 project results Pixels after litho Pixels after etch Alignment marks UBM/Final metal

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 8  Bonding on a temporary glass carrier  HT1010 (BSI product)  Bonding on EVG520  Accoustic microscope inspection  Silicon thinning to 120µm  Coarse grinding until 200µm  Edge timming until 1.5mm  Coarse + Fine grinding until 125µm  Silicon CMP (2µm) until 120µm + scrubber Medipix 3 project results P01-SONOSCAN inspectionP01-3D mapping-Si thickness post grinding

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 9  TSV patterning  Hard mask deposition:  TSV :  Photo resist  Alignment BS (TSV) / FS (UBM)  CD=60µm (AR 2:1)  TSV etch process  Multi step  HM etch  Si etch : Bosch process  TSV insulation :  LT dielectric deposition  Bottom etch to contact M1 Medipix 3 project results Alignment marks BS/FS edge mid-radius center

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 10  TSV Metalization + RDL  P01 and P03: Seed layer deposition Ti 400nm / Cu 1000nm (PVD)  P02: Ti 400nm/ Cu 1000nm (PVD) + Cu 300nm (IPVD) Medipix 3 project results

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 11  TSV Metalization + RDL  RDL litho : Dry film 15 µm  ECD Cu 9µm  Stripping  Seed layer Cu + Ti etch  RDL line thickness control Medipix 3 project results RDL lithoRDL Cu line on TSVs RDL Cu line thickness control (graph + map)

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 12  Passivation + backside UBM  Litho process  Photosensitive polymer  UBM deposition (TiNiAu)  UBM litho  UBM etch, stop on polymer Medipix 3 project results BGA matrix Polymer covering the TSV Functional die after litho UBM Functional die after UBM etch

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 13  Debonding / Cleaning  Debonding (slide-off)  Cleaning with Wafer Bond remover  Delivery for dicing Medipix 3 project results Slide off debonding P02- After debonding P01- After debonding

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 14  Chips Dicing & boxes packaging  First delivered wafers :  Metal delaminations on front side  High chipping on the edges  Chips breaking during pick out process  Tape residues on pixel side Medipix 3 project results  Need to develop an optimized dicing process :  DISCO collaboration High chipping + pad delamination Tape residues Backside chipping

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 15  Dicing trials on DISCO plant (Munchen)  Taping of BGA side on the tape  UV tape  Fine blade  High Blade rotation  Low Blade speed  Pixel side observations  Chip I4  Lower chipping compare to previous dicing  Every defects localized on dicing streets Medipix 3 project results

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 16  Pixel side observations  Chip I4 Medipix 3 project results  BGA side observations  Higher chipping than on the pixel side  contact with tape  All defects localized on the dicing streets  polymer seal ring effect

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 17 Outline  Introduction / Current status  TSV process flow  Technological results  Electical results  Conclusions / prospects

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 18  Conclusions: Isolation between UBM lines OK Alu/UBM contact resistance is OK P01 P02 P03 Medipix 3 project results / electrical tests (non exhaustive) Cumulative resistance UBM/Alu Mean value : ~ 150 mohms  UBM/ Al contact resistance

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 19  Conclusions: Uniform distribution of values  no comparizon with reference value possible Medipix 3 project results / electrical tests (non exhaustive)  2 TSV chain resistance (by Vdd)  2 TSV chain resistance (by Vss) 3.60  ± 1.9 % (1  )1.23  ± 3.6 % (1  ) P01P02P03 P01P02P03

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 20  Conclusions: Insulation issue on P01 & P02 / Root cause identified Correction on P03 Medipix 3 project results / electrical tests (non exhaustive)  Kelvin TSV  Mean value  Insulation between 2 TSV (1 connected TSV to M1 & 1 non connected) – Applied voltage : 1V Kelvin3D (Specs < 1 Ohm/TSV) / Yield: 96% Kelvin3D (Specs < 1 Ohm/TSV) / Yield: 100% 50 m  ± 14 % (1  ) P02 P01 P03 P02 P01 P03 I leak < 1 E -06 A

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 21  Test set-up :  Test board realize the interface between Medipix3 chip and readout interface  Test socket is embedded on test board to establish contact to the bga pads of the chip  We are using a custom readout interface (USB) common to most of MEDIPIX chip family Medipix 3 project results – CERN electrical results Test board Test socket Readout interface  Test samples  LETI sent a complete GELPAK of 16 diced chips. (DISCO dicing)  Parts are from IBM wafer # AZNW5VH, at CERN it was identified as Wafer # 24 (Courtesy of Jerome ALOZY / CERN)

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 22  W24-H2 DAC dependency Medipix 3 project results – CERN electrical results (Courtesy of Jerome ALOZY / CERN)

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 23  W21-H2 Noise floor comparison  View of the complete matrix behaviour  We could notice only a slight difference Medipix 3 project results – CERN electrical results (Courtesy of Jerome ALOZY / CERN) Before TSVAfter TSV

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 24  Conclusion on preliminary CERN (16 chips)  Result are really encouraging, again we have a limited number of samples to have good statistic and selected samples were not the one expected (for instance one class F was selected for electrical test). For me 10 device on 14 selected samples are functional and behave well. Medipix 3 project results – CERN electrical results (Courtesy of Jerome ALOZY / CERN) For stat.OK H2OK 11 H1OK 11 I10BADto be checked visually10 I9OK but a bit noisyto be investigated11 I8?BADto be checked visually10 I7?BADwronlgy seleceted class F sample0 I6OK 11 I5OK 11 I4BADalready bad during wafer probing0 I3BADto be checked visually10 I2OK 11 I1OK 11 J9?BADto be checked visually10 J8OK 11 J7OK 11 J6OK

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 25 Outline  Introduction / Current status  TSV process flow  Technological results  Electical results  Conclusions / prospects

© CEA. All rights reserved Medipix project status/ AIDA Meeting/ – D.Henry | 26  Tests of 84 new chips coming from wafer 02  On CERN  Assembly of detectors on VTT  on going  Dicing process LETI  One wafer LETI  optimized wafer for detector assy  Dissemination aspects :  3 common papers (CERN / LETI) in 2012 : Minapad / ISCDG / ESTC  1 paper accepted to ECTC 2013  Project starting with new design (Medipix RX ) Medipix 3 project perspectives

Thank you for your attention