Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

Slides:



Advertisements
Similar presentations
Semiconductor Device Physics
Advertisements

Semiconductor Device Physics Lecture 3 Dr. Gaurav Trivedi, EEE Department, IIT Guwahati.
Semiconductor Device Physics
Semiconductor Device Physics Lecture 6 Dr. Gaurav Trivedi, EEE Department, IIT Guwahati.
Lecture #6 OUTLINE Carrier scattering mechanisms Drift current
EE105 Fall 2007Lecture 3, Slide 1Prof. Liu, UC Berkeley Lecture 3 ANNOUNCEMENTS HW2 is posted, due Tu 9/11 TAs will hold their office hours in 197 Cory.
OUTLINE pn junction I-V characteristics Reading: Chapter 6.1
Announcements HW1 is posted, due Tuesday 9/4
Lecture #8 OUTLINE Generation and recombination Excess carrier concentrations Minority carrier lifetime Read: Section 3.3.
Spring 2007EE130 Lecture 19, Slide 1 Lecture #19 OUTLINE pn junctions (cont’d) – Charge control model Reading: Finish Chapter 6.3.
EE105 Fall 2011Lecture 3, Slide 1Prof. Salahuddin, UC Berkeley Lecture 3 OUTLINE Semiconductor Basics (cont’d) – Carrier drift and diffusion PN Junction.
Lecture #18 OUTLINE pn junctions (cont’d)
Lecture #7 OUTLINE Carrier diffusion Diffusion current Einstein relationship Generation and recombination Read: Sections 3.2, 3.3.
Spring 2007EE130 Lecture 17, Slide 1 Lecture #17 OUTLINE pn junctions (cont’d) – Reverse bias current – Reverse-bias breakdown Reading: Chapter 6.2.
Lecture 2 OUTLINE Semiconductor Fundamentals (cont’d) – Energy band model – Band gap energy – Density of states – Doping Reading: Pierret , 3.1.5;
Lecture 2 OUTLINE Important quantities Semiconductor Fundamentals (cont’d) – Energy band model – Band gap energy – Density of states – Doping Reading:
Drift and Diffusion Current
Potential vs. Kinetic Energy
EXAMPLE 8.1 OBJECTIVE To determine the time behavior of excess carriers as a semiconductor returns to thermal equilibrium. Consider an infinitely large,
Lecture 13 OUTLINE pn Junction Diodes (cont’d) Charge control model
1 Prof. Ming-Jer Chen Department of Electronics Engineering National Chiao-Tung University October 9, 2014 DEE4521 Semiconductor Device Physics Lecture.
© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lectures Diffusion of carriers Remember Brownian motion of electrons & holes! When.
Lecture 4 OUTLINE Semiconductor Fundamentals (cont’d)
Lecture 26 OUTLINE The BJT (cont’d) Breakdown mechanisms Non-ideal effects Gummel plot & Gummel numbers Modern BJT structures Base transit time Reading:
Ch 140 Lecture Notes #13 Prepared by David Gleason
L04 24Jan021 Semiconductor Device Modeling and Characterization EE5342, Lecture 4-Spring 2002 Professor Ronald L. Carter
Lecture 9 OUTLINE pn Junction Diodes – Electrostatics (step junction) Reading: Pierret 5; Hu
Empirical Observations of VBR
EE130/230A Discussion 3 Peng Zheng.
EEE 3394 Electronic Materials
Lecture 3 OUTLINE Semiconductor Fundamentals (cont’d) – Thermal equilibrium – Fermi-Dirac distribution Boltzmann approximation – Relationship between E.
President UniversityErwin SitompulSDP 8/1 Dr.-Ing. Erwin Sitompul President University Lecture 8 Semiconductor Device Physics
EE130/230A Discussion 6 Peng Zheng.
Introduction to semiconductor technology. Outline –4 Excitation of semiconductors Optical absorption and excitation Luminescence Recombination Diffusion.
President UniversityErwin SitompulSDP 6/1 Dr.-Ing. Erwin Sitompul President University Lecture 6 Semiconductor Device Physics
President UniversityErwin SitompulSDP 4/1 Lecture 4 Semiconductor Device Physics Dr.-Ing. Erwin Sitompul President University
Lecture 14 OUTLINE pn Junction Diodes (cont’d) – Transient response: turn-on – Summary of important concepts – Diode applications Varactor diodes Tunnel.
pn Junction Diodes: I-V Characteristics
Lecture #9 OUTLINE Continuity equations Minority carrier diffusion equations Minority carrier diffusion length Quasi-Fermi levels Read: Sections 3.4, 3.5.
1 Prof. Ming-Jer Chen Department of Electronics Engineering National Chiao-Tung University Nov. 5, 2012 DEE4521 Semiconductor Device Physics Lecture 5.
President UniversityErwin SitompulSDP 3/1 Dr.-Ing. Erwin Sitompul President University Lecture 3 Semiconductor Device Physics
Lecture 5 OUTLINE Semiconductor Fundamentals (cont’d) – Carrier diffusion Diffusion current Einstein relationship – Generation and recombination Excess.
Lecture 11 OUTLINE pn Junction Diodes (cont’d) – Narrow-base diode – Junction breakdown Reading: Pierret 6.3.2, 6.2.2; Hu 4.5.
Lecture 4 OUTLINE Semiconductor Fundamentals (cont’d)
Lecture 10 OUTLINE pn Junction Diodes (cont’d)
Lecture 10 OUTLINE pn Junction Diodes (cont’d)
Lecture 2 OUTLINE Important quantities
Lecture 5 OUTLINE Semiconductor Fundamentals (cont’d)
Lecture #8 OUTLINE Generation and recombination
Chapter 3, Current in Homogeneous Semiconductors
Lecture 4 OUTLINE Semiconductor Fundamentals (cont’d)
Direct and Indirect Semiconductors
Lecture 3 OUTLINE Semiconductor Fundamentals (cont’d)
Lecture #9 OUTLINE Continuity equations
Lecture 5 OUTLINE Semiconductor Fundamentals (cont’d)
Lecture 13 OUTLINE pn Junction Diodes (cont’d) Charge control model
Deviations from the Ideal I-V Behavior
Lecture 11 OUTLINE pn Junction Diodes (cont’d) Narrow-base diode
Lecture 25 OUTLINE The BJT (cont’d) Ideal transistor analysis
Lecture 10 OUTLINE pn Junction Diodes (cont’d)
Lecture 25 OUTLINE The BJT (cont’d) Ideal transistor analysis
Lecture 3 OUTLINE Semiconductor Basics (cont’d) PN Junction Diodes
Lecture 11 OUTLINE pn Junction Diodes (cont’d) Narrow-base diode
Lecture 10 OUTLINE pn Junction Diodes (cont’d)
Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)
Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)
Lecture 11 OUTLINE pn Junction Diodes (cont’d) Narrow-base diode
Lecture 10 OUTLINE pn Junction Diodes (cont’d)
Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)
Presentation transcript:

Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d) Continuity equations Minority carrier diffusion equations Minority carrier diffusion length Quasi-Fermi levels Reading: Pierret 3.4-3.5; Hu 4.7

Derivation of Continuity Equation Consider carrier-flux into/out-of an infinitesimal volume: Area A, volume Adx Jn(x) Jn(x+dx) dx EE130/230M Spring 2013 Lecture 6, Slide 2

Continuity Equations: EE130/230M Spring 2013 Lecture 6, Slide 3

Derivation of Minority Carrier Diffusion Equations The minority carrier diffusion equations are derived from the general continuity equations, and are applicable only for minority carriers. Simplifying assumptions: 1. The electric field is small, such that in p-type material in n-type material 2. n0 and p0 are independent of x (i.e. uniform doping) 3. low-level injection conditions prevail EE130/230M Spring 2013 Lecture 6, Slide 4

Starting with the continuity equation for electrons: EE130/230M Spring 2013 Lecture 6, Slide 5

Carrier Concentration Notation The subscript “n” or “p” is used to explicitly denote n-type or p-type material, e.g. pn is the hole (minority-carrier) concentration in n-type mat’l np is the electron (minority-carrier) concentration in n-type mat’l Thus the minority carrier diffusion equations are EE130/230M Spring 2013 Lecture 6, Slide 6

Simplifications (Special Cases) Steady state: No diffusion current: No R-G: No light: EE130/230M Spring 2013 Lecture 6, Slide 7

Example Lp is the hole diffusion length: Consider an n-type Si sample illuminated at one end: constant minority-carrier injection at x = 0 steady state; no light absorption for x > 0 Lp is the hole diffusion length: EE130/230M Spring 2013 Lecture 6, Slide 8

The general solution to the equation is where A, B are constants determined by boundary conditions: Therefore, the solution is EE130/230M Spring 2013 Lecture 6, Slide 9

Minority Carrier Diffusion Length Physically, Lp and Ln represent the average distance that minority carriers can diffuse into a sea of majority carriers before being annihilated. Example: ND = 1016 cm-3; tp = 10-6 s EE130/230M Spring 2013 Lecture 6, Slide 10

Quasi-Fermi Levels Whenever Dn = Dp  0, np  ni2. However, we would like to preserve and use the relations: These equations imply np = ni2, however. The solution is to introduce two quasi-Fermi levels FN and FP such that EE130/230M Spring 2013 Lecture 6, Slide 11

Example: Quasi-Fermi Levels Consider a Si sample with ND = 1017 cm-3 and Dn = Dp = 1014 cm-3. What are p and n ? What is the np product ? EE130/230M Spring 2013 Lecture 6, Slide 12

Find FN and FP : EE130/230M Spring 2013 Lecture 6, Slide 13

Summary The continuity equations are established based on conservation of carriers, and therefore hold generally: The minority carrier diffusion equations are derived from the continuity equations, specifically for minority carriers under certain conditions (small E-field, low-level injection, uniform doping profile): EE130/230M Spring 2013 Lecture 6, Slide 14