MOSFET Current Voltage Characteristics Consider the cross-sectional view of an n-channel MOSFET operating in linear mode (picture below) We assume the.

Slides:

Advertisements

Similar presentations

MICROWAVE FET Microwave FET : operates in the microwave frequencies

Advertisements

Physical structure of a n-channel device:

(Neil weste p: ).  A MOS transistor is a majority-carrier device, in which the current in a conducting channel between the source and the drain.

The MOS Transistor Polysilicon Aluminum.

Chapter 6 The Field Effect Transistor

EE466: VLSI Design Lecture 02 Non Ideal Effects in MOSFETs.

Department of EECS University of California, Berkeley EECS 105 Fall 2003, Lecture 12 Lecture 12: MOS Transistor Models Prof. Niknejad.

Lecture 11: MOS Transistor

1 CMOS Digital System Design MOS Transistor DC Operation.

Introduction to VLSI Circuits and Systems, NCUT 2007 Chapter 6 Electrical Characteristic of MOSFETs Introduction to VLSI Circuits and Systems 積體電路概論賴秉樑.

CMOS Digital Integrated Circuits

Lecture 15 OUTLINE MOSFET structure & operation (qualitative)

Metal-Oxide-Semiconductor (MOS)

EE415 VLSI Design The Devices: MOS Transistor [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]

Lecture #16 OUTLINE Diode analysis and applications continued

The metal-oxide field-effect transistor (MOSFET)

CSCE 612: VLSI System Design Instructor: Jason D. Bakos.

Week 8b OUTLINE Using pn-diodes to isolate transistors in an IC

Chap. 5 Field-effect transistors (FET) Importance for LSI/VLSI –Low fabrication cost –Small size –Low power consumption Applications –Microprocessors –Memories.

Spring 2007EE130 Lecture 36, Slide 1 Lecture #36 ANNOUNCEMENTS Updated information for Term Project was posted on 4/14 Reminder: Coffee Hour today at ~4PM!

Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

EE105 Fall 2007Lecture 16, Slide 1Prof. Liu, UC Berkeley Lecture 16 OUTLINE MOS capacitor (cont’d) – Effect of channel-to-body bias – Small-signal capacitance.

EE314 IBM/Motorola Power PC620 IBM Power PC 601 Motorola MC68020 Field Effect Transistors.

MOS Capacitors ECE Some Classes of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor ▫ MOSFET, which will be the type that.

Metal-Oxide-Semiconductor Field Effect Transistors

Lecture 19 OUTLINE The MOSFET: Structure and operation

Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

Semiconductor Devices III Physics 355. Transistors in CPUs Moore’s Law (1965): the number of components in an integrated circuit will double every year;

MOSFET Cross-Section. A MOSFET Transistor Gate Source Drain Source Substrate Gate Drain.

EE 466: VLSI Design Lecture 03.

Lecture 2 Chapter 2 MOS Transistors. Voltage along the channel V(y) = the voltage at a distance y along the channel V(y) is constrained by the following.

Digital Integrated Circuits© Prentice Hall 1995 Introduction The Devices.

ECE 342 Electronic Circuits 2. MOS Transistors

EE213 VLSI Design S Daniels Channel Current = Rate of Flow of Charge I ds = Q/τ sd Derive transit time τ sd τ sd = channel length (L) / carrier velocity.

Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.

Norhayati Soin 06 KEEE 4426 WEEK 7/1 6/02/2006 CHAPTER 2 WEEK 7 CHAPTER 2 MOSFETS I-V CHARACTERISTICS CHAPTER 2.

Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson.

Chapter 5: Field Effect Transistor

1 Metal-Oxide-Semicondutor FET (MOSFET) Copyright  2004 by Oxford University Press, Inc. 2 Figure 4.1 Physical structure of the enhancement-type NMOS.

EXAMPLE 6.1 OBJECTIVE Fp = 0.288 V

1 Fundamentals of Microelectronics  CH1 Why Microelectronics?  CH2 Basic Physics of Semiconductors  CH3 Diode Circuits  CH4 Physics of Bipolar Transistors.

CSCE 613: Fundamentals of VLSI Chip Design Instructor: Jason D. Bakos.

NMOS PMOS. K-Map of NAND gate CMOS Realization of NAND gate.

ECE340 ELECTRONICS I MOSFET TRANSISTORS AND AMPLIFIERS.

Short Channel Effects in MOSFET

Junction Capacitances The n + regions forms a number of planar pn-junctions with the surrounding p-type substrate numbered 1-5 on the diagram. Planar junctions.

Chapter 2 MOS Transistors. 2.2 STRUCTURE AND OPERATION OF THE MOS TRANSISTOR.

UNIT I MOS TRANSISTOR THEORY AND PROCESS TECHNOLOGY

Structure and Operation of MOS Transistor

HO #3: ELEN Review MOS TransistorsPage 1S. Saha Long Channel MOS Transistors The theory developed for MOS capacitor (HO #2) can be directly extended.

Short-channel Effects in MOS transistors

EE210 Digital Electronics Class Lecture 6 May 08, 2008.

Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 10: September 19, 2014 MOS Transistor.

MOS Capacitors UoG-UESTC Some Classes of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor ▫ MOSFET, which will be the.

CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES Part 2.

Integrated Circuit Devices

Metal-oxide-semiconductor field-effect transistors (MOSFETs) allow high density and low power dissipation. To reduce system cost and increase portability,

Field Effect Transistor (FET)

CP 208 Digital Electronics Class Lecture 6 March 4, 2009.

Transistors (MOSFETs)

The MOS capacitor. (a) Physical structure of an n+-Si/SiO2/p-Si MOS capacitor, and (b) cross section (c) The energy band diagram under charge neutrality.

EE130/230A Discussion 10 Peng Zheng.

Damu, 2008EGE535 Fall 08, Lecture 21 EGE535 Low Power VLSI Design Lecture #2 MOSFET Basics.

Lecture 20 OUTLINE The MOSFET (cont’d) Qualitative theory

ECE574 – Lecture 3 Page 1 MA/JT 1/14/03 MOS structure MOS: Metal-oxide-semiconductor –Gate: metal (or polysilicon) –Oxide: silicon dioxide, grown on substrate.

Lecture 16 ANNOUNCEMENTS OUTLINE MOS capacitor (cont’d)

Channel Length Modulation

Lecture 20 OUTLINE The MOSFET (cont’d) Qualitative theory

Lecture 20 OUTLINE The MOSFET (cont’d)

Lecture 20 OUTLINE The MOSFET (cont’d)

Presentation transcript:

MOSFET Current Voltage Characteristics Consider the cross-sectional view of an n-channel MOSFET operating in linear mode (picture below) We assume the threshold voltage is constant along the channel. The channel voltage V c has boundary conditions: V c at x=0 =V S =0 and V c at x=L =V DS The channel is inverted from the source end to the drain end. Other voltages of interest are: V GS ≥V T0 and V GD =V GS -V DS ≥V T0 n+n+ n+n+ Channel Depletion Region + - V DS V GS > V T0 V S =0 V B =0 p-type substrate x y x=0x=L DrainSource

MOSFET Voltage Characteristics The channel current (drain current I D ) is caused by electrons in the channel region traveling from source to drain under the influence of the lateral electric field. If the total mobile electron charge in the surface inversion layer is assigned the vaiable Q I(x), we can thus express this charge as a function of the gate- to-source voltage V GS and the channel voltage V c(x) Q I(x) =-C ox [V GS -V c(x) -V T0 ] The thickness of the inversion layer tapers along the channel from the source towards the drain because the influence of V gate-tochannel decreases from source to drain. If we consider a small incremental resistance dR for a differential segment of the channel assuming constant electron mobility  n at the surface we have:

MOSFET Voltage Current Characteristic The variable W represents the channel width. The electron surface mobility  n depends on the doping concentration of the channel region. We further assume that the channel current density is uniform across the segment where we are measuring the incremental resistance. I D flows between the source and drain. Applying Ohm’s law for this segment yields the voltage drop along the incremental segment dx: The above equation can now be integrated along the channel from x=0 to x=L using the boundary conditions for V c We get:

MOSFET Voltage Current Characteristics Assuming that the channel voltage V c is the only variable that depends on position x, the drain current is determined to be: This equation shows the dependence of the drain current on the process parameters such as oxide capacitance, carrier mobility, and bulk to source voltage. The drain current I D also depends on the device’s channel length and width.

MOSFET Voltage Current Characteristics The equations: represent a simple view of the MOS transistor DC Voltage current equations. There are models that better calculate the MOS transistor’s operation with accuracy.