Lecture 6 Complex NMOS 240-451 VLSI, 2000 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Lecture 6 Complex NMOS 240-451 VLSI, 2000

In the Past 240-451 VLSI, 2000 VDD B Y A C Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut In the Past A C B Y VDD 240-451 VLSI, 2000

Department of Computer Engineering, Prince of Songkla University Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Memory NMOS 240-451 VLSI, 2000

Dynamic RAM 1. Dynamic RAM using 6 NMOS High bit rate word sequential Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Dynamic RAM 1. Dynamic RAM using 6 NMOS High bit rate word sequential 1 1 B A 240-451 VLSI, 2000

Dynamic RAM 2. Dynamic RAM using 4 NMOS Row select 240-451 VLSI, 2000 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Dynamic RAM 2. Dynamic RAM using 4 NMOS Row select 240-451 VLSI, 2000

Dynamic RAM using 4 NMOS B1 - bit line B2 - bit line Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Dynamic RAM using 4 NMOS B1 - bit line B2 - bit line 240-451 VLSI, 2000

Read Dynamic RAM using 4 NMOS Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Read Dynamic RAM using 4 NMOS off on Activate word line I I = 0 240-451 VLSI, 2000

Write “0” in Dynamic RAM using 4 NMOS Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Write “0” in Dynamic RAM using 4 NMOS 1 OFF ON Cg2 Release Q until not have I at T2, then Cg1 charge Q until T1 ON Flip/Flop 240-451 VLSI, 2000

Dynamic RAM using 3 NMOS Read/write start at f2 = 1 1 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Dynamic RAM using 3 NMOS Read/write start at f2 = 1 1 240-451 VLSI, 2000

Write “1” in Dynamic RAM using 3 NMOS Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Write “1” in Dynamic RAM using 3 NMOS write and f2 = 1 off Y = 1 240-451 VLSI, 2000

Write “0” in Dynamic RAM using 3 NMOS Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Write “0” in Dynamic RAM using 3 NMOS write and f2 = 0 1 Off No changing 240-451 VLSI, 2000

Read Dynamic RAM using 3 NMOS Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Read Dynamic RAM using 3 NMOS write and f2 = 0 / read and f2 = 1 ON OFF Off when Y = 0 If Y = 1 bit line = 0 if Y= 0 bit line = 1 240-451 VLSI, 2000

Dynamic RAM using 1 NMOS 240-451 VLSI, 2000 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Dynamic RAM using 1 NMOS 240-451 VLSI, 2000

Write into Dynamic RAM using 1 NMOS Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Write into Dynamic RAM using 1 NMOS 1 Write ‘1’ with charge Cs Value which want to write ‘0’ or ‘1’ Write ‘0’ with nocharge Cs 240-451 VLSI, 2000

Read Dynamic RAM using 1 NMOS Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Read Dynamic RAM using 1 NMOS discharge Q ‘0’ or ‘1’ detect with sense amplifier 240-451 VLSI, 2000

Department of Computer Engineering, Prince of Songkla University Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Static RAM 240-451 VLSI, 2000

PROM (mask programmable rom) EPROM (erasable programmable rom) Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut ROM PROM (mask programmable rom) EPROM (erasable programmable rom) EEPROM (electrically erasable programmable rom) 240-451 VLSI, 2000

Memory Structure in VLSI Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Memory Structure in VLSI 240-451 VLSI, 2000

ROM circuit, 4x4 bit NOR based ROM Array Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut ROM circuit, 4x4 bit NOR based ROM Array 240-451 VLSI, 2000

Department of Computer Engineering, Prince of Songkla University Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut 240-451 VLSI, 2000

4x4 bit NAND based ROM Array Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut 4x4 bit NAND based ROM Array 240-451 VLSI, 2000

temporary memory using in Data path Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Shift Register temporary memory using in Data path Half register Half register 240-451 VLSI, 2000

Half Register Half register 240-451 VLSI, 2000 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Half Register Half register 240-451 VLSI, 2000

Data Path input input Combination 240-451 VLSI, 2000 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Data Path input input Combination 240-451 VLSI, 2000

PLA (Programmable logic arrays) Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut PLA (Programmable logic arrays) Built by R. Preobsting NOR-NOR Structure (Product of Sum) 240-451 VLSI, 2000

PLA (Programmable logic arrays) Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut PLA (Programmable logic arrays) Change to be NOR logic before program 240-451 VLSI, 2000

How to program PLA 240-451 VLSI, 2000 Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut How to program PLA 240-451 VLSI, 2000