Use of Data Analysis and TCAD Simulations to Understand the Characteristics and Reliability of High Voltage MOS Transistors Jone F. Chen Department of.

Slides:

Advertisements

Similar presentations

Lecture Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FET) MOSFET Introduction 1.

Advertisements

MICROWAVE FET Microwave FET : operates in the microwave frequencies

Display Systems and photosensors (Part 2)

Characterization of LDMOS Devices in the Deep Cryogenic Regime

1 Series Resonant Converter with Series-Parallel Transformers for High Input Voltage Applications C-H Chien 1,B-R Lin 2,and Y-H Wang 1 1 Institute of Microelectronics,

Metal Oxide Semiconductor Field Effect Transistors

Derek Wright Monday, March 7th, 2005

Spring 2007EE130 Lecture 41, Slide 1 Lecture #41 QUIZ #6 (Friday, May 4) Material of HW#12 & HW#13 (Lectures 33 through 38) –MOS non-idealities, V T adjustment;

From analog to digital circuits A phenomenological overview Bogdan Roman.

SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. Introduction SD Lab. SOGANG Univ. Gil Yong Song.

Jan M. Rabaey Digital Integrated Circuits A Design Perspective.

1 Fundamentals of Microelectronics  CH1 Why Microelectronics?  CH2 Basic Physics of Semiconductors  CH3 Diode Circuits  CH4 Physics of Bipolar Transistors.

SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. Breakdown Voltage(1) SD Lab. SOGANG Univ. Doohyung Cho.

Solar Cell Operation Key aim is to generate power by:

Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 1 Chapter IV June 14, 2015June 14, 2015June 14, 2015 P-n Junction.

Spring 2007EE130 Lecture 35, Slide 1 Lecture #35 OUTLINE The MOS Capacitor: Final comments The MOSFET: Structure and operation Reading: Chapter 17.1.

Lecture 15 OUTLINE MOSFET structure & operation (qualitative)

The metal-oxide field-effect transistor (MOSFET)

E ssonne N anopole September 20, 2004ALTIS Semiconductor Device Engineering team USING TCAD TO MINIMIZE PROCESS DISPERSIONS G. DUBOIS D. ANDRADE.

Chapter 01 An Overview of VLSI

Reading: Finish Chapter 6

Chap. 5 Field-effect transistors (FET) Importance for LSI/VLSI –Low fabrication cost –Small size –Low power consumption Applications –Microprocessors –Memories.

Reliability Analysis of Flexible Electronics: Case Study of Hydrogenated Amorphous Silicon (a-Si:H) TFT Scan Driver Tsung-Ching (Jim) Huang Tim Cheng Feb.

LDMOS for RF Power Amplifiers

Lecture 0: Introduction. CMOS VLSI Design 4th Ed. 0: Introduction2 Introduction  Integrated circuits: many transistors on one chip.  Very Large Scale.

MOS Capacitors ECE Some Classes of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor ▫ MOSFET, which will be the type that.

Optional Reading: Pierret 4; Hu 3

Lecture 19 OUTLINE The MOSFET: Structure and operation

Chapter 1 Power Electronic Devices

Field-Effect Transistor

MOS Capacitors MOS capacitors are the basic building blocks of CMOS transistors MOS capacitors distill the basic physics of MOS transistors MOS capacitors.

MOS Transistors The gate material of Metal Oxide Semiconductor Field Effect Transistors was original made of metal hence the name. Present day devices’

© Digital Integrated Circuits 2nd Devices Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic.

Achieve a New Type Frequency Divider Circuit and Application By MOS-HBT-NDR Y.K. LI, K.J. Gan, C. S. Tsai, P.H. Chang and Y. H. Chen Department of Electronic.

Course Overview ECE/ChE 4752: Microelectronics Processing Laboratory Gary S. May January 8, 2004.

1 Metal-Oxide-Semicondutor FET (MOSFET) Copyright  2004 by Oxford University Press, Inc. 2 Figure 4.1 Physical structure of the enhancement-type NMOS.

VLSI, Lecture 1 A review of microelectronics and an introduction to MOS technology Department of Computer Engineering, Prince of Songkla.

Avalanche Transit Time Devices

Leakage current of device HEMT versus MOSFET 이진식.

Fabrication of CMOS Imagers

ENE 311 Lecture 9.

1 Fundamentals of Microelectronics  CH1 Why Microelectronics?  CH2 Basic Physics of Semiconductors  CH3 Diode Circuits  CH4 Physics of Bipolar Transistors.

Field Effect Transistor. What is FET FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only.

NOTES 27 March 2013 Chapter 10 MOSFETS CONTINUED.

Analog Integrated Circuit Design (Analog CMOS Circuit Design) Ali Heidary, Electrical Engineering, Guilan University 1.

Lecture 18 OUTLINE The MOS Capacitor (cont’d) – Effect of oxide charges – Poly-Si gate depletion effect – V T adjustment Reading: Pierret ; Hu.

Field Effect Transistors

Vanderbilt MURI meeting, June 14 th &15 th 2007 Band-To-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices.

Lecture 18 OUTLINE The MOS Capacitor (cont’d) – Effect of oxide charges – V T adjustment – Poly-Si gate depletion effect Reading: Pierret ; Hu.

HO #3: ELEN Review MOS TransistorsPage 1S. Saha Long Channel MOS Transistors The theory developed for MOS capacitor (HO #2) can be directly extended.

Bi-CMOS Prakash B.

MOS Capacitors UoG-UESTC Some Classes of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor ▫ MOSFET, which will be the.

CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES Part 2.

Introduction to CMOS Transistor and Transistor Fundamental

Metal-oxide-semiconductor field-effect transistors (MOSFETs) allow high density and low power dissipation. To reduce system cost and increase portability,

Nano and Giga Challenges in Microelectronics Symposium and Summer School Research and Development Opportunities Cracow Sep , 2004 Afternoon 11: Nanotechnology.

Electrical Characteristics of Logic Gates Gate Characteristics Last Mod: January 2008  Paul R. Godin.

P. Fernández-Martínez – Optimized LGAD PeripheryRESMDD14, Firenze 8-10 October Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de.

Government Engineering College Bharuch Metal Oxide Semiconductor Field Effect Transistors{MOSFET} Prepared by- RAHISH PATEL PIYUSH KUMAR SINGH

Lecture 18 OUTLINE The MOS Capacitor (cont’d) Effect of oxide charges

Different Types of Transistors and Their Functions

MOSFET The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device which is widely used for switching and amplifying.

Other Transistor Topologies

VLSI design Short channel Effects in Deep Submicron CMOS

SILVACO simulations & clean room measurements

ELEC 6970: Low Power Design Class Project By: Sachin Dhingra

Physics of Semiconductor Devices

Semiconductor devices and physics

Other Transistor Topologies

Other Transistor Topologies

Presentation transcript:

Use of Data Analysis and TCAD Simulations to Understand the Characteristics and Reliability of High Voltage MOS Transistors Jone F. Chen Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan

2 Purpose High voltage metal-oxide-semiconductor (MOS) transistors are widely used in smart power management integrated circuits (IC), liquid-crystal display (LCD) drivers, and NAND flash memory periphery circuitry because of the compatibility to be integrated into standard complementary metal-oxide- semiconductor (CMOS) process. Since high voltage MOS transistors are operated under high voltage, breakdown voltage (V BD ) is a critical device parameter and hot-carrier induced device degradation is an important reliability concern. This work reports analysis of V BD and hot-carrier induced device degradation in high voltage MOS transistors with varied process in drift region.

3 Outline Off-state Breakdown Hot-carrier Induced Degradation TCAD Simulations Device Description Results and Discussions Conclusions

4 Off-state Breakdown High E-field in the junction causes electron/hole pair generation. This avalanche multiplication results in breakdown.

5 Hot-carrier Induced Degradation Carriers accelerate in high E-field region and gain sufficient energy to create damage in gate oxide or oxide/Si interface, degrading device characteristics.

6 Hot-carrier Stress Procedure Stressing were carried out at high drain voltage and interrupted periodically to measure I D degradation.

7 Technology Computer-Aided Design (TCAD) Simulations ATHENA DeckBuild Structure File Command File ATLAS Device Simulator Solution Files Log Files Runtime Output TonyPlot Visualization Tool About TCAD TCAD combines two kinds of tools: Core tools in charge of running different parts of simulations. Interactive tools are which users manage their settings.

8 Device Description High voltage MOS transistors were fabricated by an advanced CMOS compatible process. The length of gate and N - drift region are 2  m and 1.2  m, respectively. Four devices (A, B, C, D) were fabricated. A is the control device. B, C, D are implanted with BF 2 with low, medium, and high doping levels in N - drift region.

9 Net Doping Device D has less net doping due to BF 2 implant in drift region. AD

10 V BD Results Device D has the highest V BD. Higher BF 2 implant dosage results in higher V BD.

11 V BD Analysis TCAD simulations suggest that higher V BD in device D is due to the absence of high E-field in drift region. AD

12 Hot-carrier Stress Results Device D has the greatest I D degradation. Higher BF 2 implant dosage results in higher I D degradation.

13 Hot-carrier Stress Analysis TCAD simulations show that the current-flow path in device D is closer to Si-SiO 2 interface. The effect of hot- carrier induced damage on I D degradation is greater, leading to enhanced I D degradation in device D. AD

14 Conclusions BF 2 implant in drift region of high voltage MOS transistors results in higher V BD. BF 2 implant in drift region of high voltage MOS transistors enhances hot-carrier induced device degradation. Care should be taken in determining drift region process because a trade-off between V BD and hot-carrier induced device degradation is observed.

Thank you for your Attention