5/24/2001 1 Plasma Assisted Controllable Bonding SFR Workshop May 24, 2001 Yonah Cho, Chang-Han Yun, and Nathan Cheung Berkeley, CA 2001 GOAL: To establish.

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Presentation transcript:

5/24/ Plasma Assisted Controllable Bonding SFR Workshop May 24, 2001 Yonah Cho, Chang-Han Yun, and Nathan Cheung Berkeley, CA 2001 GOAL: To establish plasma recipes and bonding data for Si, oxide, and metal surfaces

5/24/ New Applications of Plasma Enhanced Bonding Systems Integration Metal polymer Enhanced Adhesion between low k /metal Metal Precleaned wafers stored as bonded pair Si Particle/contaminant free storage Debond SOI Technology

5/24/ Capacitance + V- V0 p-Si accumulation inversion as cleaned plasma exposed Plasma Induced Surface Charge Both n-Si and p-Si surface are + charged after plasma exposure. V sweep > 1000V Surface Charge Density > /cm 2 Technics Plasma Etcher Vacuum O2O2 Pr = 220 mtorr P = 150 W wafer Surface Charge Analyzer Data

5/24/ Surface Charge Control: e - Bombardment Vacuum V Capacitance + V- V0 accumulation inversion After e- bombardment plasma exposed Complete neutralization by e- bombardment PIII Chamber with ECR plasma source Ar V wafer = +50 V dc I wafer =.17 A Surface Charge Analyzer Data p-Si

5/24/ Proposed Bonding Model O H O O H H H Si O O O H O O H H H OO Hydrophilic Bonding Plasma Enhanced Bonding ++ -- ++ ++ Interaction between Partial charges (  + and  -) due to high  x (electronegativity): O-H: 1.2, N-H: 0.8, C-H:0.3 Ref: I.N. Levine, Physical Chemistry ++ -- ++ -- ++ -- ++ ++ -- ++ -- ++ -- ++ Enhanced interaction between surface charge and H 2 O

5/24/ Surface Dependent Bonding Strength  f (Si) Double side plasma Single side plasma No plasma  max (mJ/m 2 )

5/24/ Bonding Kinetics E a = 0.58 eV Plasma enhanced bonding E a >> HL bonding (E a ~ 0.05 eV) Arrehenius Plot HL bonding at RT Time Dependent Bonding Strength,  (t)

5/24/ Hydrophobic Hydrophilic Bonding Energy (mJ/m 2 ) Annealing Temperature ( o C) Bonding Energy vs. Temperature O 2 plasma Tong et al. APL 64, 625 (94) Accomplishments Established SCA technique to monitor surface charge Transient and steady-state bonding kinetics studied Bias mode demonstrated as a control variable for surface charge

5/24/ and 2003 Goals 2002:Demonstrate polymer surface modification with plasma implantation or surface treatment. 2003:Demonstrate concomitant plasma treated deposition surfaces as effective diffusion barrier. Surface Layer Si Substrate Plasma treatment Deposition Modified Surface