UniS Plastic Optical Fibre (POF) minimum in loss at 650nm

UniS VCSEL Module

UniS BREDSEL Images 1/2 of a BREDSEL chip Contact Pad VCSEL Alignment marker Size of a single BREDSEL chip

UniS Device Structure Top Bragg Mirror: 35 pairs of Al 0.95 Ga 0.05 As / Al 0.5 Ga 0.5 As doped p-type plus selective oxidisation layer of Al 0.98 Ga 0.02 As. Bottom Bragg mirror: 54.5 pairs. Active Region: x4 quantum wells in a 1 cavity. The detailed thicknesses of the various layers were optimised for 665 nm operation. 50% AlGaAs 95% AlGaAs Grade 95% - 50% Grade 50% - 95% 50% AlGaAs Grade 50% - 95% 95% AlGaAs Grade 95% - 50% 50% AlGaAs 95% AlGaAs Grade 95% - 50% Grade 50% - 95% Grade 50% - 100% AlAs Grade 100% - 0% GaAs Substrate GaAs cap; 100A 30 periods 4 periods 54 periods Bottom mirror pair (n-type) Selective oxidation layer Top mirror pair (p-type) Active region; 4 QW’s

UniSLocation EUROPE UNITED KINGDOM AND IRELAND SOUTH-EAST ENGLAND

UniSProjects UV NIR MIR In(GaN) for blue/green/amber LEDs and blue/green lasers. Al(GaInP) for high power red lasers and red VCSELs for plastic fibre links. InGaAsP/AlGaInAs/GaInNAs and InAs/GaAs quantum dots for 1.3  m and 1.55  m telecommunications lasers. In(GaSb) for 2  m-6  m lasers for gas- sensing applications. Increasing wavelength