doc.: IEEE /1357r1 Submission Extra tones in the preamble November, 2015 Slide 1 Date: Authors: Intel, Marvell, et. al. NameAffiliationAddressPhone Robert Stacey Intel 2111 NE 25th Ave, Hillsboro OR 97124, USA Shahrnaz Azizi Po-Kai Huang Qinghua Li Xiaogang Chen Chitto Ghosh Laurent Cariou Yaron Alpert Assaf Gurevitz Ilan Sutskover

doc.: IEEE /1357r1 Submission Slide 2 Authors (continued) NameAffiliationAddressPhone Hongyuan Zhang Marvell 5488 Marvell Lane, Santa Clara, CA, Yakun Sun Lei Wang Liwen Chu Jinjing Jiang Yan Zhang Rui Cao Sudhir Srinivasa Bo Yu Saga Tamhane Mao Yu Xiayu Zheng Christian Berger Niranjan Grandhe Hui-Ling Lou

doc.: IEEE /1357r1 Submission Slide 3 Authors (continued) NameAffiliationAddressPhone Alice Chen Qualcomm 5775 Morehouse Dr. San Diego, CA, USA Albert Van Zelst Straatweg 66-S Breukelen, 3621 BR Netherlands Alfred Asterjadhi 5775 Morehouse Dr. San Diego, CA, USA Arjun Bharadwaj 5775 Morehouse Dr. San Diego, CA, USA Bin Tian 5775 Morehouse Dr. San Diego, CA, USA Carlos Aldana 1700 Technology Drive San Jose, CA 95110, USA George Cherian 5775 Morehouse Dr. San Diego, CA, USA Gwendolyn Barriac 5775 Morehouse Dr. San Diego, CA, USA Hemanth Sampath 5775 Morehouse Dr. San Diego, CA, USA Lin Yang 5775 Morehouse Dr. San Diego, CA, USA Menzo Wentink Straatweg 66-S Breukelen, 3621 BR Netherlands Naveen Kakani 2100 Lakeside Boulevard Suite 475, Richardson TX 75082, USA Raja Banerjea 1060 Rincon Circle San Jose CA 95131, USA Richard Van Nee Straatweg 66-S Breukelen, 3621 BR Netherlands

doc.: IEEE /1357r1 Submission Slide 4 Authors (continued) NameAffiliationAddressPhone Rolf De Vegt Qualcomm 1700 Technology Drive San Jose, CA 95110, USA Sameer Vermani 5775 Morehouse Dr. San Diego, CA, USA Simone Merlin 5775 Morehouse Dr. San Diego, CA, USA Tao Tian 5775 Morehouse Dr. San Diego, CA, USA Tevfik Yucek 1700 Technology Drive San Jose, CA 95110, USA VK Jones 1700 Technology Drive San Jose, CA 95110, USA Youhan Kim 1700 Technology Drive San Jose, CA 95110, USA Ron Porat Broadcom Sriram Venkateswaran Matthew Fischer Leo Montreuil Andrew Blanksby Vinko Erceg

doc.: IEEE /1357r1 Submission Slide 5 Authors (continued) Joonsuk Kim Apple Aon Mujtaba Guoqing Li Eric Wong Chris NameAffiliationAddressPhone James Yee Mediatek No. 1 Dusing 1 st Road, Hsinchu, Taiwan Alan Jauh Chingwa Hu m Frank Hsu Thomas Pare Mediatek USA 2860 Junction Ave, San Jose, CA 95134, USA ChaoChun Wang om James Wang Jianhan Liu Tianyu Wu Zhou Lan Russell Huang m

doc.: IEEE /1357r1 Submission Slide 6 Authors (continued) NameAffiliationAddressPhone Peter Loc Huawei Le Liu F1-17, Huawei Base, Bantian, Shenzhen Jun Luo 5B-N8, No.2222 Xinjinqiao Road, Pudong, Shanghai Yi Luo F1-17, Huawei Base, Bantian, Shenzhen Yingpei Lin 5B-N8, No.2222 Xinjinqiao Road, Pudong, Shanghai Jiyong Pang 5B-N8, No.2222 Xinjinqiao Road, Pudong, Shanghai Zhigang Rong Telesis Court, Suite 365, San Diego, CA NA Rob Sun 303 Terry Fox, Suite 400 Kanata, Ottawa, Canada David X. Yang F1-17, Huawei Base, Bantian, Shenzhen Yunsong Yang Telesis Court, Suite 365, San Diego, CA NA Junghoon Suh 303 Terry Fox, Suite 400 Kanata, Ottawa, Canada Jiayin Zhang 5B-N8, No.2222 Xinjinqiao Road, Pudong, Shanghai Edward Au 303 Terry Fox, Suite 400 Kanata, Ottawa, Canada Teyan Chen F1-17, Huawei Base, Bantian, Shenzhen Yunbo Li F1-17, Huawei Base, Bantian, Shenzhen

doc.: IEEE /1357r1 Submission Slide 7 Authors (continued) NameAffiliationAddressPhone Jinmin Kim LG Electronics 19, Yangjae-daero 11gil, Seocho-gu, Seoul , Korea Kiseon Ryu Jinyoung Chun Jinsoo Choi Jeongki Kim Dongguk Lim Suhwook Kim Eunsung Park JayH Park HanGyu Cho Thomas DerhamOrange Bo Sun ZTE #9 Wuxingduan, Xifeng Rd., Xi'an, China Kaiying Lv Yonggang Fang Ke Yao Weimin Xing Brian Hart Cisco Systems 170 W Tasman Dr, San Jose, CA Pooya Monajemi

doc.: IEEE /1357r1 Submission Slide 8 Authors (continued) NameAffiliationAddressPhone Fei Tong Samsung Innovation Park, Cambridge CB4 0DS (U.K.) Hyunjeong Kang Maetan 3-dong; Yongtong-Gu Suwon; South Korea Kaushik Josiam 1301, E. Lookout Dr, Richardson TX (972) Mark Rison Innovation Park, Cambridge CB4 0DS (U.K.) Rakesh Taori 1301, E. Lookout Dr, Richardson TX (972) Sanghyun Chang Maetan 3-dong; Yongtong-Gu Suwon; South Korea Yasushi Takatori NTT 1-1 Hikari-no-oka, Yokosuka, Kanagawa Japan Yasuhiko Inoue Shoko Shinohara Yusuke Asai Koichi Ishihara Junichi Iwatani Akira Yamada NTT DOCOMO 3-6, Hikarinooka, Yokosuka- shi, Kanagawa, , Japan Fujio Watanabe 3240 Hillview Ave, Palo Alto, CA com Haralabos Papadopoulos tions.com

doc.: IEEE /1357r1 Submission Slide 9 Authors (continued) NameAffiliationAddressPhone Masahito Mori Sony Corp. Yusuke Yuichi Kazuyuki William

doc.: IEEE /1357r1 Submission Outline To increase data subcarriers in SIG-A/SIG-B, we propose to allocate 4 extra subcarriers to 1x portion of the HE preamble not including L-STF and L-LTF fields. With extra tones, there are some power imbalance issues need to be discussed. Intel, Marvell, et. al. Slide 9 November, 2015

doc.: IEEE /1357r1 Submission Due to the limitation that L-LTF covers only 52 subcarriers, HE- SIG-A/HE-SIG-B can only transmit information on 48 subcarriers. –More payloads were added in HE-SIG-A for 11ax –HE-SIG-B may need to convey large amount of information depending on the number of scheduled STAs Propose to add training subcarriers in L-SIG –This extension provides extra channel estimates for the subsequent symbols (HE-SIGA/HE-SIGB) –Symbols that follow L-SIG will have a subcarrier allocation similar to 11n/ac Intel, Marvell, et. al. Slide 11 Motivation for extra subcarriers in the HE preamble November, 2015

doc.: IEEE /1357r1 Submission Increased Subcarrier Allocation in L-SIG Allocate additional subcarriers in L-SIG –They are extended L-LTF subcarriers used for channel estimation; –Allows more data bits in HE-SIG-A and HE-SIG-B than that of the L- SIG –The repeated extra subcarriers in RL-SIG allow comparable SNR performance as L-LTF Intel, Marvell, et. al. Slide 12 November, 2015

doc.: IEEE /1357r1 Submission Impacts to legacy/11ax devices For legacy devices: –The extension would not impact the performance of legacy devices in decoding L-SIG; –The extended subcarriers are simply disregarded by the legacy devices. For 11ax devices: –Aware of the additional subcarriers and use them for channel estimation; –Decoding L-SIG similar to legacy devices. Intel, Marvell, et. al. Slide 13 November, 2015

doc.: IEEE /1357r1 Submission Power Adjustment We propose to transmit L-SIG, RL-SIG, HE-SIG-A and HE-SIG-B with the same total power as L-LTF field –We could scale the power on L-SIG and RL-SIG to maintain the same power per tone as in L-LTF. But keeping the same power per OFDM symbol is more straightforward. By keeping the same power per symbol in L-SIG/RL-SIG and L-LTF, the estimated channel on L-LTF and those obtained from extra subcarriers of L-SIG/RL-SIG have slightly power imbalance. –Friendly to amplitude immunity modulation (BPSK/QPSK); –If 16QAM/64QAM is applied in SIGB, receiver may choose to de- boost the CE with factor sqrt(52/56) on the tones spanned by L-LTF. Slide 14Intel, Marvell, et. al. November, 2015

doc.: IEEE /1357r1 Submission Summary To increase HE-SIG-A/HE-SIG-B payload, propose to add 4 extra subcarriers on L-SIG and RL-SIG for additional LTF training. –Add 4 extra tones starting from L-SIG, through R-LSIG, HE-SIG-A and HE-SIG-B fields. Propose to transmit L-SIG, RL-SIG, HE-SIG-A and HE- SIG-B with the same total power as L-LTF field. –Receiver adjusts the power of estimated channel accordingly if higher modulation order (>QPSK) is used on HE-SIG-B. November, 2015 Intel, Marvell, et. al.Slide 15

doc.: IEEE /1357r1 Submission Straw poll Do you support to: –Allocate 4 extra subcarriers, two at each edge of each 20MHz sub- channel, for L-SIG, RL-SIG, HE-SIG-A and HE-SIG-B fields in 11ax PPDUs. The 4 subcarriers added to the L-SIG and RL-SIG fields are transmitted with known TBD BPSK constellations (+-1). The number of data subcarriers in HE-SIG-A and HE-SIG-B fields are increased by 4 in each 20MHz sub-channel. L-SIG, RL-SIG, HE-SIG-A and HE-SIG-B fields are always transmitted with the same total power as L-LTF field (in cases when L-LTF is not being boosted). Slide 16Intel, Marvell, et. al. November, 2015