MOS Capacitor Picture.

Slides:



Advertisements
Similar presentations
VLSI Design/ RMC© D. Al-Khalili Devices-2 1 The Threshold Voltage  The voltage applied between the gate and the source which causes the beginning of the.
Advertisements

Chapter 6 The Field Effect Transistor
EE466: VLSI Design Lecture 02 Non Ideal Effects in MOSFETs.
Spring 2007EE130 Lecture 33, Slide 1 Lecture #33 OUTLINE The MOS Capacitor: C-V examples Impact of oxide charges Reading: Chapter 18.1, 18.2.
Lecture 11: MOS Transistor
Lecture 15 OUTLINE MOSFET structure & operation (qualitative)
Metal-Oxide-Semiconductor (MOS)
EE415 VLSI Design The Devices: MOS Transistor [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]
Lecture 10: PN Junction & MOS Capacitors
Introduction to CMOS VLSI Design Lecture 3: CMOS Transistor Theory David Harris Harvey Mudd College Spring 2004 from CMOS VLSI Design A Circuits and Systems.
Spring 2007EE130 Lecture 32, Slide 1 Lecture #32 OUTLINE The MOS Capacitor: Capacitance-voltage (C-V) characteristics Reading: Chapter 16.4.
Spring 2007EE130 Lecture 30, Slide 1 Lecture #30 OUTLINE The MOS Capacitor Electrostatics Reading: Chapter 16.3.
Chapter 4. MOS Systems Total 3 hours.. The Adventure of Carriers The description must now borrow a picture from the classical books of adventure. To place.
VLSI design Lecture 1: MOS Transistor Theory. CMOS VLSI Design3: CMOS Transistor TheorySlide 2 Outline  Introduction  MOS Capacitor  nMOS I-V Characteristics.
EE105 Fall 2007Lecture 16, Slide 1Prof. Liu, UC Berkeley Lecture 16 OUTLINE MOS capacitor (cont’d) – Effect of channel-to-body bias – Small-signal capacitance.
MOS Capacitors ECE Some Classes of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor ▫ MOSFET, which will be the type that.
ECE 431 Digital Circuit Design Chapter 3 MOS Transistor (MOSFET) (slides 2: key Notes) Lecture given by Qiliang Li 1.
MOSFET Cross-Section. A MOSFET Transistor Gate Source Drain Source Substrate Gate Drain.
EE130/230M Review Session 1.Small Signal Models for MOSFET/BJT 2.MOS Electrostatics.
ECE 342 Electronic Circuits 2. MOS Transistors
Basic Equations for Device Operation
P-N Junctions Physical aspects of pn junctions Mathematical models Depletion capacitance Breakdown characteristics Basis for other devices Circuit Symbol.
Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson.
Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 10: September 28, 2011 MOS Transistor.
Modern VLSI Design 4e: Chapter 2 Copyright  2009 Prentice Hall PTR Topics n Derivation of transistor characteristics.
EXAMPLE 6.1 OBJECTIVE Fp = 0.288 V
Norhayati Soin 06 KEEE 4426 WEEK 3/2 13/01/2006 KEEE 4426 VLSI WEEK 3 CHAPTER 1 MOS Capacitors (PART 2) CHAPTER 1.
Chapter 4 Field-Effect Transistors
© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 30 Metal-Semiconductor Contacts Real semiconductor devices and ICs always contain.
NMOS PMOS. K-Map of NAND gate CMOS Realization of NAND gate.
ELECTRONICS II VLSI DESIGN FALL 2013 LECTURE 4 INSTRUCTOR: L.M. HEAD, PhD ELECTRICAL & COMPUTER ENGINEERING ROWAN UNIVERSITY.
ECE 4339 L. Trombetta ECE 4339: Physical Principles of Solid State Devices Len Trombetta Summer 2007 Chapters 16-17: MOS Introduction and MOSFET Basics.
Norhayati Soin 06 KEEE 4426 WEEK 3/1 9/01/2006 KEEE 4426 VLSI WEEK 3 CHAPTER 1 MOS Capacitors (PART 1) CHAPTER 1.
Junction Capacitances The n + regions forms a number of planar pn-junctions with the surrounding p-type substrate numbered 1-5 on the diagram. Planar junctions.
Chapter 2 MOS Transistors. 2.2 STRUCTURE AND OPERATION OF THE MOS TRANSISTOR.
Lecture 18 OUTLINE The MOS Capacitor (cont’d) – Effect of oxide charges – Poly-Si gate depletion effect – V T adjustment Reading: Pierret ; Hu.
ECE442: Digital ElectronicsCSUN, Spring-2010-Zahid MOS Transistor ECE442: Digital Electronics.
Structure and Operation of MOS Transistor
Lecture 18 OUTLINE The MOS Capacitor (cont’d) – Effect of oxide charges – V T adjustment – Poly-Si gate depletion effect Reading: Pierret ; Hu.
Electric field, Electric Potential Difference and Capacitance.
Norhayati Soin 06 KEEE 4426 WEEK 3/2 20/01/2006 KEEE 4426 VLSI WEEK 4 CHAPTER 1 MOS Capacitors (PART 3) CHAPTER MOS Capacitance.
CMOS VLSI Design CMOS Transistor Theory
Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 10: September 19, 2014 MOS Transistor.
Network for Computational Nanotechnology (NCN) UC Berkeley, Univ.of Illinois, Norfolk State, Northwestern, Purdue, UTEP First Time User Guide to MOSCAP*
Transitors.
MOS Capacitors UoG-UESTC Some Classes of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor ▫ MOSFET, which will be the.
MOSFET Current Voltage Characteristics Consider the cross-sectional view of an n-channel MOSFET operating in linear mode (picture below) We assume the.
Introduction to semiconductor technology. Outline –6 Junctions Metal-semiconductor junctions –6 Field effect transistors JFET and MOS transistors Ideal.
© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 38 MOS capacitor Threshold Voltage Inversion: at V > V T (for NMOS), many electrons.
7. Direct Current circuits. 11 Find the currents, which flow in all the wires of the circuit in this figure 12  9 V 6 V b a cd 18 
Integrated Circuit Devices
Electrical Energy. Electric Potential Energy Note: Energy is scalar, so keep the sign on the charge +d means movement in the same direction as the E-field.
MOS capacitor before joining The metallic gate may be replaced with a heavily doped p+ polysilicon gate. The Fermi energy levels are approximately at.
Consider a charged capacitor whose plates are separated by air (dielectric constant 1.00 ). The capacitor is electrically isolated from its surroundings.
Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 10: September 20, 2013 MOS Transistor.
MOS CAPACITOR Department of Materials Science & Engineering
Damu, 2008EGE535 Fall 08, Lecture 21 EGE535 Low Power VLSI Design Lecture #2 MOSFET Basics.
MOS Transistor Theory The MOS transistor is a majority carrier device having the current in the conducting channel being controlled by the voltage applied.
CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES Part 1.
Chapter 2 MOS Transistors.
Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson.
CHAPTER 3.
ECE574 – Lecture 3 Page 1 MA/JT 1/14/03 MOS structure MOS: Metal-oxide-semiconductor –Gate: metal (or polysilicon) –Oxide: silicon dioxide, grown on substrate.
The Threshold Voltage The voltage applied between the gate and the source which causes the beginning of the channel surface strong inversion. Threshold.
ECE 333 Linear Electronics
Day 10: September 26, 2012 MOS Transistor Basics
Lecture 16 OUTLINE The MOS Capacitor (cont’d) Electrostatics
MOS Capacitors Dr. David W. Graham West Virginia University
Conductors.
Lecture 16 OUTLINE The MOS Capacitor (cont’d) Electrostatics
Presentation transcript:

MOS Capacitor Picture

MOS Electrostatics Condition is called flatband --- the voltage when this occurs is called flatband This state is the baseline operating case --- a capacitive divider has one free parameter

MOS Electrostatics Depletion Condition --- gate charge is terminated by charged ions in the depletion region Part of this region is often referred to as weak-inversion

MOS Electrostatics Inversion --- further gate charge is terminated by carriers at the silicon--silicon-dioxide interface

MOS Structure Electrostatics

MOS Electrostatics

MOS-Capacitor Regions Surface potential moving from depletion to inversion Qs = e (Y - Vs)/UT Qs = ln( 1 + e ) (k(Vg - VT) - Vs)/UT Depletion (k(Vg - VT) - Vs < 0) Qs = e (k(Vg - VT) - Vs)/UT Inversion (k(Vg - VT) - Vs > 0) Qs = (k(Vg - VT) - Vs)/UT

MOS Capacitor Picture