Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September 12 2006 Magnetic Czochralski silicon as detector material J. Härkönen, E. Tuovinen,

Slides:

Advertisements

Similar presentations

Radiation damage in silicon sensors

Advertisements

FABRICATION PROCESSES

Epitaxial Silicon Detectors for Particle Tracking Overview on Radiation Tolerance at Extreme Hadron Fluence G. Lindström (a), E. Fretwurst (a), F. Hönniger.

Eija Tuominen Siena TEST BEAM RESULTS OF A LARGE AREA STRIP DETECTOR MADE ON HIGH RESISTIVITY CZOCHRALSKI SILICON Helsinki Institute of Physics,

Eija Tuominen DEVELOPMENT OF RADIATION HARD DETECTORS Helsinki Institute of Physics (HIP) In close cooperation with: Microelectronics Centre,

1 Observation of Gamma Irradiation-Induced Suppression of Reverse Annealing in Neutron Irradiated MCZ Si Detectors Zheng Li 1, Rubi Gul 1, Jaakko Harkonen.

1 Microelectronics Processing Course - J. Salzman - Jan Microelectronics Processing Oxidation.

128 September, 2005 Silicon Sensor for the CMS Tracker The Silicon Sensors for the Inner Tracker of CMS CMS Tracker and it‘s Silicon Strip Sensors Radiation.

Lecture 10: PN Junction & MOS Capacitors

Lecture #16 OUTLINE Diode analysis and applications continued

Solid State Detectors-2

Test of Pixel Sensors for the CMS experiment Amitava Roy Purdue University.

Radiation Effects in Microelectronics EE-698a Course Seminar by Aashish Agrawal.

Week 8b OUTLINE Using pn-diodes to isolate transistors in an IC

ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING

Radiation Detection and Measurement II IRAD 2731.

Characterization of 150  m thick epitaxial silicon pad detectors from different producers after 24 GeV/c proton irradiation Herbert Hoedlmoser (1), Michael.

The Devices: Diode.

Microstrip Detector R&D at Helsinki Institute of Physics J. Härkönen, E. Tuovinen, P. Luukka, E. Tuominen and J. Tuominiemi Helsinki Institute of Physics.

Semiconductor detectors

Charge collection studies on heavily diodes from RD50 multiplication run G. Kramberger, V. Cindro, I. Mandić, M. Mikuž Ϯ, M. Milovanović, M. Zavrtanik.

Fabrication of Active Matrix (STEM) Detectors

1 Semiconductor Detectors  It may be that when this class is taught 10 years on, we may only study semiconductor detectors  In general, silicon provides.

Outline Introduction CMOS devices CMOS technology

Pure Tungsten As a high performance materials, Pure Tungsten has high melting temperature, high density, low vapor pressure, low thermal expansion combined.

1. A clean single crystal silicon (Si) wafer which is doped n-type (ColumnV elements of the periodic table). MOS devices are typically fabricated on a,

RD50 Katharina Kaska1 Trento Workshop : Materials and basic measurement problems Katharina Kaska.

Semi-conductor Detectors HEP and Accelerators Geoffrey Taylor ARC Centre for Particle Physics at the Terascale (CoEPP) The University of Melbourne.

Study of leakage current and effective dopant concentration in irradiated epi-Si detectors I. Dolenc, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž Jožef.

IC Process Integration

M. Bruzzi et al. Thermal donors in MCz Si, Trento Meeting Rd50 February 28, 2005 Mara Bruzzi, D. Menichelli, M. Scaringella INFN Florence, University of.

Z. Li Brookhaven National Laboratory, Upton, NY , USA E. Verbitskaya, V. Eremin, A. Ivanov Ioffe Physico-Technical Institute of Russian Academy.

Gunnar Lindstroem – University of Hamburg1 G. Lindstroem a, E. Fretwurst a, F. Hönniger a, A. Junkes a, K. Koch a and I. Pintilie a,b a Institute for Exp.

Manufacture of High Resistivity, Low Oxygen Czochralski Silicon

J.Harkonen and Z.Li, LHCC open session, CERN, 24th November CERN RD39 Collaboration: Cryogenic Tracking Detectors RD39 Status Report 2004 Jaakko.

SILICON DETECTORS PART I Characteristics on semiconductors.

M. Bruzzi, the issue of p-type disuniformity, 7° RD50 Workshop, CERN, November 14-16, 2005 The issue of doping disuniformity in p-type MCz Si sensors M.

Lecture 24a, Slide 1EECS40, Fall 2004Prof. White Lecture #24a OUTLINE Device isolation methods Electrical contacts to Si Mask layout conventions Process.

D. Menichelli, RD50, Hamburg, august TSC, DLTS and transient analysis in MCz silicon Detectors at different process temperature, irradiation.

1 Space charge sign inversion and electric field reconstruction in 24 GeV proton irradiated MCZ Si p + -n(TD)-n + detectors processed via thermal donor.

INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #4. Ion Implantation  Introduction  Ion Implantation Process  Advantages Compared to Diffusion  Disadvantages.

Silicon detector processing and technology: Part II

16 sept G.-F. Dalla BettaSCIPP Maurizio Boscardin a, Claudio Piemonte a, Alberto Pozza a, Sabina Ronchin a, Nicola Zorzi a, Gian-Franco Dalla Betta.

8 July 1999A. Peisert, N. Zamiatin1 Silicon Detectors Status Anna Peisert, Cern Nikolai Zamiatin, JINR Plan Design R&D results Specifications Status of.

CERN, November 2005 Claudio Piemonte RD50 workshop Claudio Piemonte a, Maurizio Boscardin a, Alberto Pozza a, Sabina Ronchin a, Nicola Zorzi a, Gian-Franco.

Update on TCAD Simulation Mathieu Benoit. Introduction The Synopsis Sentaurus Simulation tool – Licenses at CERN – Integration in LXBatch vs Engineering.

Junction Formation The position of the junction for a limited source diffused impurity in a constant background is given by The position of the junction.

RD50 Michael Moll – PH-TA1-SDMeeting February 25, Three R&D strategies:  Material engineering - Defect engineering of silicon (oxygenation, dimers,

Inversion Study on MCz-n and MCz-p silicon PAD detectors irradiated with 24 GeV/c protons Nicola Pacifico Excerpt from the MSc thesis Tutors: Prof. Mauro.

Maria Rita Coluccia Simon Kwan Fermi National Accelerator Laboratory

SMART Study of radiation damage induced by 24GeV/c and 26MeV protons on heavily irradiated MCz and FZ silicon detectors V. Radicci Dipartimento Interateneo.

The Sixth International "Hiroshima" Symposium Giulio Pellegrini Technology of p-type microstrip detectors with radiation hard p-spray, p-stop and moderate.

CMOS FABRICATION.

Martin Frey, IEKP, Karlsruhe Erkki Anttila, Sandor Czellar, Jaakko Härkönen, Matti Kortelainen, Tapio Lampén, Panja Luukka, Maria Maksimow,

Studies on n and p-type MCz and FZ structures of the SMART Collaboration irradiated at fluences from 1.0 E+14 to 5.6E+15 p cm -2 RD50 Trento Workshop ITC-IRST.

6th Trento Workshop on Advanced Silicon Radiation Detectors1/16 J.P. BalbuenaInstituto de Microelectrónica de Barcelona IMB-CNM (CSIC) J.P. Balbuena, G.

Claudio Piemonte Firenze, oct RESMDD 04 Simulation, design, and manufacturing tests of single-type column 3D silicon detectors Claudio Piemonte.

G. PellegriniInstituto de Microelectrónica de Barcelona Status of LGAD RD50 projects at CNM28th RD50 Workshop (Torino) 1 Status of LGAD RD50 projects at.

3D SEMICONDUCTOR RADIATION DETECTOR R&D AT HIP EUDET-JRA2 MEETING NIKHEF Juha Kalliopuska.

Development of Novel On-Chip, Customer-Design Spiral Biasing Adaptor for Si Drift Detectors and Detector Arrays for X-ray and Nuclear Physics Experiments.

Manoj B. Jadhav Supervisor Prof. Raghava Varma I.I.T. Bombay PANDA Collaboration Meeting, PARIS – September 11, 2012.

AC―coupled pitch adapters for silicon strip detectors J. Härkönen 1), E. Tuovinen 1), P. Luukka 1), T. Mäenpää 1), E. Tuovinen 1), E. Tuominen 1), Y. Gotra.

Development of N-in-P Silicon Strip and Pixel sensors for very high radiation environments Y. Unno For the Collaboration of KEK, Univ. Tsukuba and Hamamatsu.

Ioana Pintilie, 11 th RD50 Workshop, November 2007, Geneve

Microelectronic Fabrication

Homogeneity and thermal donors in p-type MCz-Si detector materials

Fermi Level Dependent Diffusion in Silicon

Vladimir Cindro, RD50 Workshop, Prague, June 26-28, 2006

Lecture #15 OUTLINE Diode analysis and applications continued

Forward-bias operation of FZ and MCz silicon detectors made with different geometries in view of their applications as radiation monitoring sensors J.

Presentation transcript:

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Magnetic Czochralski silicon as detector material J. Härkönen, E. Tuovinen, P. Luukka, H.K. Nordlund and E. Tuominen Helsinki Institute of Physics Gustaf Hallstrominkatu University of Helsinki Finland

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Outline Motivation to use Czochralski silicon (Cz-Si). Why not before ? Crystal growth. Processing issues. Thermal Donors (TD) in Cz-Si P-type magnetic Cz-Si Radiation Hardness Summary Esa Tuovinen loading MCz-Si wafers into oxidation furnace at the Microelectronics Center of Helsinki University of Technoly, Finland.

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Why Cz-Si ? Cz-Si available in larger diameters Lower wafer cost Better compatibility with advanced CMOS processes Oxygen brings significant improvement in thermal slip resistance Oxygen gives significant radiation hardness advantage. * No demand for high resistivity Cz-Si -> No availability * Price for custom specified ingot 15,000 € - 20,000 € * Now RF-IC industry shows intrest on high resistivity Cz-Si (=lower substrate losses of RF-signal) Why not before ?

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Crystal growth Gas flow Pressure Purge tubes (gas flow pattern Crucible rotation Crystal rotation Temperature distribution Magnetic field Olli Anttila, Okmetic Ltd., 6th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders Helsinki, 2-4 June, Growth parameters

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Requirements for detector applications High resistivity Oxygen concentration 5-10×10 17 cm -3 Homogeneity High minority carrier lifetime Oxygen donor compensation Boron/Aluminum contamination

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Oxygen concentration in MCz-Si O concentration from FTIR measurements Thick reference wafer Center 4,95*10 17 cm -3 Right 4,89*10 17 cm -3 Left 4,93*10 17 cm -3 Right 4,93*10 17 cm -3

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Strip detector processing The devices were processed at Helsinki University of Technology Microelectronics Center with simple 5-8 level mask process: 4 lithographies 2-3 ion implantations 2 thermal dry oxidations 3 sputter metal depositions AC-pad,bonded to read out DC-pad,for testing Bias resistors Bias line Guard Ring for isolation multi GR

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Processing of Cz-Si Detectors Basically no difference from standard Fz-Si detector process, except… High O content leads to Thermal Donor (TD) formation at temperatures C – C. Typical process steps at C – C - Aluminum sintering (e.g C) - Passivation insulators over metals (LTO,TEOS etc ~600 0 C + H 2 from Si 3 H 4 process gas) TD formation can be enhanced if H is present.

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Thermal Donors in Cz-Si TDs are oxygen complexes that form shallow states in Si band gap below the conduction band. High O content leads to Thermal Donor (TD) formation at temperatures C – C. Effective resistivity can be adjusted in p-type MCz- Si 500  cm <  <  10 k  cm TD formation can be enhanced if H is present. J. von Boehm, With this method it is possible to engineer the V fd of p-type MCz-Si n+/p-/p+ detectors

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Thermal Donor generation (experimental results) One data point is average of 10 diodes over the wafer diameter Error bars represent standard deviation

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Fitting of the Model II χ=1.893 c=6.824× b= ×10 -6

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Homogeneity Full Depletion Voltage with respect of distance from wafer center

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Homogeneity Leakage current with respect of distance from wafer center P068 is n + /p - /p + device with p-stop implant (1x10 15 cm -2 ) and p-spray 1x10 15 cm -2

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Radiation hardness of MCz-Si Proton radiation: Less prone for V fd increase than std Fz-Si or Diffusion oxygenated Fz-Si Neutron radiation: No significant difference Gamma radiation: Increase of positive space charge. Beneficial for Linear Collider applications ? Z.Li, J. Härkönen, E. Tuovinen, P. Luukka et al., Radiation hardness of high resistivity Cz-Si detectors after gamma, neutron and proton radiations, IEEE Trans. Nucl. Sci., 51 (4) (2004)

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Summary Thermal Donors can be introduced into MCz-Si detectors at 430  C during the aluminum sintering, i.e. b low cost process, no additional process complexity. MCz-Si is commercially available in large quantities with resistivity 1000  cm (n-type) and 2 k  cm (p-type). Leakage current and V fd in p-type MCz-Si n+/p-/p+ and p + /n - /n + detectors is homogenous over the wafer diameter. MCz-Si shows better radiation hardeness againsta protons than Fz-Si materials. No improvment against neutron and no difference in leakage current.