VLSI Masoumeh Ebrahimi 810180228 Mismatch of MOS Transistor.

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Presentation transcript:

VLSI Masoumeh Ebrahimi Mismatch of MOS Transistor

Sources: (IEEE Journals of solid state circuits) 1. Matching properties of MOS transistor 1. Matching properties of MOS transistor 2. Transistor matching in analog CMOS applications 2. Transistor matching in analog CMOS applications 3. Characterizations and modeling of mismatch in MOS transistors for precision analog design 3. Characterizations and modeling of mismatch in MOS transistors for precision analog design

Introduction M ismatch is the process that causes time-independent random variations in physical quantities of identically designed devices. Causes of current Mismatch: Causes of current Mismatch: Edge effects Edge effects Implantation and surface-state charges Implantation and surface-state charges Oxide effects Oxide effects Mobility effects Mobility effects Mismatch in threshold voltage, the current factor, and the substrate factor of the MOS tran as a function of area, distance, and orientation. Mismatch in threshold voltage, the current factor, and the substrate factor of the MOS tran as a function of area, distance, and orientation. Local and Global Variations. Local and Global Variations.

Applications: Precision analog circuits Precision analog circuits Switched capacitor filter Switched capacitor filter Analog to digital converter Analog to digital converter CMOS ICs parallel CMOS ICs parallel In circuit design CAD In circuit design CAD Reference sources Reference sources Digital circuits Digital circuits …

A/D converter

Clock signal propagates in inverter chains

Modeling of Mismatches Fourier Transform: Variance of a rectangular device Drain current properties

Current factor Variance of Drain current

Exact Formula