Switching Losses Switching Power Pole Switching Device I OUT V IN R ON Ideal Diode (for now..)

Slides:



Advertisements
Similar presentations
Electrónica de Potência © 2008 José Bastos Chapter 2 Power Semiconductor Switches: An Overview 2-1 Chapter 2 Overview of Power Semiconductor Devices Introduction.
Advertisements

P-n Junction Diode.
Chapter 6-2. Carrier injection under forward bias
Chapter 9. PN-junction diodes: Applications
CONTROLLABLE SWITCHES
© Electronics ECE 1231 Recall-Lecture 3 Current generated due to two main factors Drift – movement of carriers due to the existence of electric field Diffusion.
CH14 BIPOLAR DIGITAL CIRCUITS The Ideal BJT Transistor Switch
CHAPTER TWO POWER SEMICONDUCTOR DIODES AND CIRCUITS DESIGNED BY DR. SAMEER KHADER PPU “E-learning Project”
Ch6 DC-DC Converters 6-1 Linear voltage regulators Fig. 6.1 Adjustingbasecurrent, => linear DC-DC converter orlinear regulator Thetransistor operates in.
Thyristors Introduction & Characteristics
ECE 442 Power Electronics1 Bipolar Junction Transistors (BJT) NPNPNP.
VLSI Design Lecture 3a: Nonideal Transistors. Outline Transistor I-V Review Nonideal Transistor Behavior Velocity Saturation Channel Length Modulation.
SOGANG UNIVERSITY SOGANG UNIVERSITY. SEMICONDUCTOR DEVICE LAB. Introduction SD Lab. SOGANG Univ. Gil Yong Song.
Power Device Characteristics Voltage Rating: Off state blocking voltage – exceed and destroy! Current Rating: On (saturation) state maximum – exhibits.
Introduction to CMOS VLSI Design Lecture 15: Nonideal Transistors David Harris Harvey Mudd College Spring 2004.
Introduction to CMOS VLSI Design Lecture 19: Nonideal Transistors
الکترونیک صنعتی دانشگاه تهران – بهزاد آسائی 1385.
Spring 2007EE130 Lecture 20, Slide 1 Lecture #20 OUTLINE pn Junctions (cont’d) – small-signal model – transient response turn-off Reading: Chapters 7,
Introduction to CMOS VLSI Design MOS Behavior in DSM.
Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 1 Chapter IV June 14, 2015June 14, 2015June 14, 2015 P-n Junction.
VLSI Design Lecture 3a: Nonideal Transistors
Bipolar Junction Transistors (BJT) NPNPNP. BJT Cross-Sections NPN PNP Emitter Collector.
ECE 442 Power Electronics1 Series Resonant Inverter with Bidirectional Switch.
Spring 2007EE130 Lecture 27, Slide 1 Lecture #27 OUTLINE BJT small signal model BJT cutoff frequency BJT transient (switching) response Reading: Finish.
ECD 442 Power Electronics1 Power MOSFETs Two Types –Depletion Type Channel region is already diffused between the Drain and Source Deplete, or “pinch-off”
ECE 442 Power Electronics1 Class E Resonant Inverter.
PN-Junction Diode Characteristics
Introduction to CMOS VLSI Design Nonideal Transistors.
Chapter 9 Practical Application Issues of Power Semiconductor Devices
Spring 2007EE130 Lecture 17, Slide 1 Lecture #17 OUTLINE pn junctions (cont’d) – Reverse bias current – Reverse-bias breakdown Reading: Chapter 6.2.
IGBT Applications In HEV/EV
Semiconductor Power Switches and Supplementary Components and Systems.
Diode Switching Losses
Voltage regulation with Zener diode By:Engr.Irshad Rahim Memon.
Power Electronic Devices
Power Electronics Lecture-3 Power Electronic Devices Power Diodes
Power Electronic Devices
Power Electronics Lecture(8)
Power FETs are an integral power device, it’s ability to switch from on-state to off-state is crucial in quick switching devices. All the while also having.
Power Electronics Lecture (3)
ECE Electric Drives Topic 1: Introduction to Electric Drives
Bipolar Junction Transistors (BJTs)
Diode Circuits. Voltage Regulation Rectifier Circuit.
MOSFETs - 1 Copyright © by John Wiley & Sons 2003 Power MOSFETs Lecture Notes Outline Construction of power MOSFETs Physical operations of MOSFETs Power.
Lecture 13 OUTLINE pn Junction Diodes (cont’d) Charge control model
EE130/230A Discussion 7 Peng Zheng.
Kristin Ackerson, Virginia Tech EE Spring The diode is the simplest and most fundamental nonlinear circuit element. Just like resistor, it has.
Gate Turn-Off Thyristor
Electronics Devices and Circuit Theory 10th Edition - Boylestad Electronics Fundamentals 8 th edition - Floyd/Buchla Majority and Minority Carriers Majority.
President UniversityErwin SitompulSDP 8/1 Lecture 8 Semiconductor Device Physics Dr.-Ing. Erwin Sitompul President University
Switch Realization for DC-DC Converters
Power Semiconductor Devices Power Diodes Cross-sectional view of a pn- junction diode intended for power applications. I-V characteristics of a pn- junction.
PIN DIODE CORPORATE INSTITUTE OF SCIENCE & TECHNOLOGY, BHOPAL DEPARTMENT OF ELECTRONICS & COMMUNICATIONS BY- PROF. RAKESH k. JHA.
EE631 – Spring ECE631/EE631Q Lecture 15: Switch Level Inverter Modeling S.D.Sudhoff Purdue University.
Lecture 27 OUTLINE The BJT (cont’d) Small-signal model Cutoff frequency Transient (switching) response Reading: Pierret 12; Hu
LARGE-SIGNAL BEHAVIOR OF BJTS Large-signal models in the forward-active region Effects of collector voltage in the forward-active region Ohmic and inverse.
Committee Briefing. Devices Tested P3100 P1300 P0080.
EE 442 POWER ELECTRONICS I DIODE CIRCUITS Dr. Said A. Deraz Assistant Professor Electrical Engineering Department Faculty of Engineering, King Abdulaziz.
Diode in Digital Logic Design Section Schedule #DateDayTopicSection 1 1/14TuesdayDiagnostic Test L 1/14Tuesday Lab protocol, cleaning procedure,
Chapter 2 Overview of Power Semiconductor Devices
Lecture 13 OUTLINE pn Junction Diodes (cont’d) Charge control model
VARACTOR DIODE CORPORATE INSTITUTE OF SCIENCE & TECHNOLOGY , BHOPAL
Introduction to the pn-junction Diode
Changing Device Parameters in PSpice
Lecture 13 OUTLINE pn Junction Diodes (cont’d) Charge control model
Automotive Warp 2 Series IGBT with Ultrafast Soft Recovery Diode
Lecture 13 OUTLINE pn Junction Diodes (cont’d) Charge control model
Introduction Dr. Kakade K.P.
Presentation On Schottky Diode. Course Code:3208 Course Title : Microwave radar and satellite communication lab Presented By Salma Akter BKH F.
Presentation transcript:

Switching Losses Switching Power Pole Switching Device I OUT V IN R ON Ideal Diode (for now..)

A B Turn-On Characteristic V sat = R DS(on) I o Off Condition Carrier concentration established in Depletion region On Condition

t t d(on) t ri t fv A B V IN I OUT V SAT Switching Device Behavior with Ideal Diode: Turn “On” Switch Voltage Switch Current Diode Current

t t d(on) t ri t fv A B V IN I OUT PdPd  U ON Switching Loss On-State Loss V SAT I OUT t c,on

D C V sat = R DS(on) I o Turn-Off Characteristic Off Condition Reverse E-Field established in Depletion region On Condition

t t d(off) t rv t fi C D V IN I OUT V SAT Switching Device Behavior with Ideal Diode: Turn “Off” Switch Voltage Switch Current Diode Current

t t d(on) t rv t fi C D PdPd  U OFF Switching Loss On-State Loss t c,off V IN I OUT V SAT I OUT

Switching Loss Frequency Dependency: f s On-State Loss

Example: V IN = 50 v I OUT = 15 A f s = 100 kHz T c,on = 75 nS D = 0.4 T c,off =35 nS R DS(on ) =.03  Find switching losses