TFA Gold Etchant (diluted 9:1) 24-26 Å / sec. Conditions: 2 mL concentrated TFA in 18 mL of DI H 2 O. Room temp. Clean room. Sample was agitated continuously.

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Presentation transcript:

TFA Gold Etchant (diluted 9:1) Å / sec. Conditions: 2 mL concentrated TFA in 18 mL of DI H 2 O. Room temp. Clean room. Sample was agitated continuously by hand. Rinsed in DI H 2 O afterwards. Profilometry done at CHANL. Performed – Dmitry

RIE etching SMiF) Fe = 0 Å / sec. Nb = Å / sec. Ge = 726 – 900 Å / sec. Conditions: 100 W, CF4 = 40 sccm, O2 = 4 sccm. Performed – Alex and/or Liang Au Nb Fe Ge (15mm*15mm) Each section is about 3mm*7mm

Plasma Asher (CHANL) S 1813 polymer. Non-linear. Conditions: 1 sccm O 2 flow, varied power. Etching profile of square device Performed – Dmitry

10 mM HCl Å / sec. Conditions: 1mL of 3N (=3M) HCl diluted in ~ 300 mL of DI H 2 O. Continuously stirred with a magnetic stir bar. Washed with running DI H 2 O for 5+ min. Room temp., CHANL clean room. Profilometry done at CHANL. Mask – S1813. Performed – Dmitry

ICP – RIE Fe etch (SMiF) 6-7 Å / sec. Conditions: SMiF Trion Minilock II. 300 W ICP, 125 W RIE. BCl 3 = 5±1 sccm, Cl 2 = 45±1 sccm. Manual runs to make sure flow is stabilized. Sample: Si substrate, Ti/Fe 60/1000 Å. Profilometry done at SMiF. Mask – S1813. Performed – Dmitry Note: although the rate was not measured, the etch does go through the Ti wetting layer and Si substrate, albeit at 500 W ICP.