Activité LPNHE en 2012 et 2013 G.Calderini Tracker upgrade

IBL Phase-0 -Simulations of sensors and evaluation productions (during the last few years, now over for IBL) - Testbeams - IBL stave loading, testing and commissioning at Uni-GE and CERN - Mechanics (see Didier’s transparencies) Phase-2 and core R&D - Development of sensor simulations models - Edgeless sensors - Testbeam organization - Electronics and R&D on interconnections - ATLAS Track trigger (AM chip) The LPNHE group is involved both in Phase-0 (IBL) and Phase-2 activities

Planar Slim Edge sensors (CiS) - Oxygenated n-in-n um thick - guard rings under pixels - 215um inactive reg. 3D Slim Edge sensors (FBK +CNM) - p-type um thick um inactive reg. (Option 1: 100% planar pixel sensors) Option 2: 75% planar pixel, 25% 3D

ActivitiesStartingEnding FEI4-BSept 11: SubmissionDec 11 for wafer tests Bump bondingAug 11: pre-productionSept 12: Completion Module assemblyFeb 12: 1 st modules ready for loading Oct to Dec 12 Module loadingFeb 12:  4 staves to be ready by Apr/May 12 Jan 13: Completion Stave loadingSep 12: starting with the 1 st available staves Feb – Mar 13: Completion Final tests and commissioning Sep 12Jul 13: IBL Installation IBL schedule key dates LPNHE group should contribute to about two weeks of shifts (2012) and 3 weeks (2013) in the UNI-GE cleanroom

2012 testbeam effort In 2012: 5 test-beams, about 30 persons in total to evaluate PPS and 3D (+DBM) The LPNHE group contributed with persons and hardware from our electronics pool.

Mechanics See Didiers’ transparencies

Phase-2 and core R&D Device simulations (Silvaco) General expertise Development of specific models Work to extend to n-in-p sensors the model of interface defect traps developed for n-in-n devices Insertion of intermediate levels in the gap to reproduce the Si/SiO2 interface defects After radiation and better describe the leakage current and breakdown behavior Good agreement with Measurements on our n-in-p device production

Edgeless sensors with DRIE (FBK/LPNHE project) Deep trench diffusion (to prevent electrical field on the damaged cut) Cut line Trench definition is critical: - aspect ratio: 20:1 - deep etching: um - trench width: 8-12um ● Goal: make the rim zone equipotential ● How: DRIE as for 3D process ● Trench doped by diffusion

Electronics Interest for 65nm electronics LPNHE is also part of the AIDA EU project (providing a number of IP blocks for WP3) Expertise in radiation tests from previous experiments of people (BaBar / ILC) Support card for OmegaPix irradiation tests Contributions to OmegaPix2 chips

One slide on track trigger FastTracKer : a hardware track finder for ATLAS Trigger Full silicon detector acceptance, pT > 1 GeV Tracks with ~offline quality reconstructed parameters available to level-2 processors FTK reads hits at L1 rate and reconstructs the event in ~100 μs Two step algorithm: Pattern recognition with Associative Memory (ASIC) Linear PCA-based track fit with FPGAs Associative Memory (AM) ASIC: the core processor of the pattern recognition stage. Evolution of the AMchip03 of SVT (CDF) Current prototype AMchip04 done and under testing: 65 nm technology (SVT chip was 180 nm) 8k patterns/chip (5k patterns/chip) Ternary logic for variable resolution (new feature) AMchip05 (FTK final chip candidate): 32k – 64k patterns Serial links

Persons involved at LPNHE T.Beau(MdC, P7) M. Bomben(CDD-HN) G.Calderini(DR2 CNRS) J.Chauveau(PR, P6) G.Marchiori(CR2 CNRS) P.Schwemling(PR, P7) D. Laporte(IE, CNRS) F. Crescioli(IR, CNRS) F. Dematos(IR, CNRS) O.Le Dortz(IR, CNRS) J.F. Genat(IR, CNRS) Funding / support expected/obtained from: ATLAS and laboratory (IN2P3) EUDET and AIDA EU projects Emergence (UPMC Project) EU FP7 (IAPP already approved project) L. Bosisio(invited from Univ.Trieste) R. Kass(invited from Ohio State U.)

Realizations/expenses ) Phase-0 achievements using funds 5 KE Testbeam and commissioning Mechanics prototyping Expenses IBL (missions excluded) Cleanroom material

2) Phase-2 achievements using funds 3 KEFE-I4 wafer procurement 4 KEThin detector production (MPI) 10 KESemiconductor parameter analyzer (cards still to buy) FBK sensor production support Participation to n-in-p slim productions (MPI, down to 150um) as support for interconnection studies (see Abdenours’ talk) Total of 22KE engaged out of 21 received

Funding requests for ) ATLAS related general needs 0 KE 2) Strictly IBL-related 5 KEcleanroom ordinary metabolism (+ 18KE asked to Christophe to equip the Semiconductor parameters analyser with SMUs)

Funding requests for ) More general R&D 0* KEinterconnections 30 KEedgeless R&D (bump-bonding of produced devices, already mentioned last year) 5 KESIMS on produced devices 4 KESupport to ATLAS track trigger work 4 KEMechanics TOTAL: 50KE 4) Participation in RD50 2 KEparticipation (Missions not dicussed here)

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Installation of a 4 th pixel layer inside the current pixel detector: performance of current pixel detector will degrade before main tracker upgrade (Phase 2) maintain physics performance in high occupancy environment (higher granularity, r/o bandwidth) increase radiation hardness (IBL fluence ~ 5x B-Layer fluence)  Insertable B-Layer 250 Mrad TID and 5x10 15 n eq cm -2 installation originally planned for … advanced (in 2011) to 2013 (Fast-track IBL) IBL mounted on new beam pipe Length: ~64cm Envelope: R in = 31mm, R out =40mm 14 staves, 32 pixel sensors / stave. Front-end chip: FE-I4 (IBM 130 nm CMOS tech.) 50μm x 250μm 80(col) x 336 (rows) = cells. 2cm x 2cm!

A word on RD50 We have been contacted several times and invited to join the RD50 collaboration We think that this point has to be discussed more generally at ATLAS (/IN2P3) level. The fee is ~negligible (1400 CHF/year/group) but then sooner or later we will need to contribute to at least some of the RD50 detector productions (each time the contribution is typically of order of 5-10KE) Scientifically it would probably be worthwhile, but the funding aspect has to be discussed in ATLAS