Charge Collection, Power, and Annealing Behaviour of Planar Silicon Detectors after Reactor Neutron, Pion and Proton Doses up to 1.6×10 16 n eq cm -2 A.

Slides:



Advertisements
Similar presentations
Epitaxial Silicon Detectors for Particle Tracking Overview on Radiation Tolerance at Extreme Hadron Fluence G. Lindström (a), E. Fretwurst (a), F. Hönniger.
Advertisements

New Operation Scenarios for Severely Irradiated Silicon Detectors G. Casse University of Liverpool 1 VERTEX 2009, Mooi Veluwe (NL) September 2009.
Combined Measurement Results of dedicated RD50 Charge Multiplication Sensors Christopher Betancourt 2, Tom Barber 2, Gianluigi Casse 1, Paul Dervan 1,
Trapping in silicon detectors G. Kramberger Jožef Stefan Institute, Ljubljana Slovenia G. Kramberger, Trapping in silicon detectors, Aug , 2006,
30 th March 2010 IoP HEPP/APP Annual Conference 2010 UCL Charge Collection Annealing in ATLAS SCT Silicon Sensors Craig Wiglesworth.
Vertex 2001 Brunnen, Switzerland Phil Allport Gianluigi Casse Ashley Greenall Salva Marti i Garcia Charge Collection Efficiency Studies with Irradiated.
Department of Physics VERTEX 2002 – Hawaii, 3-7 Nov Outline: Introduction ISE simulation of non-irradiated and irradiated devices Non-homogeneous.
1 Irradiation Study of n-on-P Strip Sensors K. Hara, K. Inoue, A. Mochizuki (Univ. of Tsukuba) Y. Unno, S. Terada, T. Kohriki, Y. Ikegami (KEK) K. Yamamura,
Characterization of 150  m thick epitaxial silicon pad detectors from different producers after 24 GeV/c proton irradiation Herbert Hoedlmoser (1), Michael.
Wide Bandgap Semiconductor Detectors for Harsh Radiation Environments
Charge collection studies on heavily diodes from RD50 multiplication run G. Kramberger, V. Cindro, I. Mandić, M. Mikuž Ϯ, M. Milovanović, M. Zavrtanik.
Summary of CMS 3D pixel sensors R&D Enver Alagoz 1 On behalf of CMS 3D collaboration 1 Physics Department, Purdue University, West Lafayette, IN
Charge collection studies on heavily diodes from RD50 multiplication run (update) G. Kramberger, V. Cindro, I. Mandić, M. Mikuž Ϯ, M. Milovanović, M. Zavrtanik.
11 th RD50 Workshop, CERN Nov Results with thin and standard p-type detectors after heavy neutron irradiation G. Casse.
KIT – University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association Institut für Experimentelle Kernphysik
June 3rd, 2009Studies of Depletion Voltage Jessica Metcalfe University of New Mexico Capacitance Measurements and Depletion Voltage for Annealed Fz and.
RD50 Katharina Kaska1 Trento Workshop : Materials and basic measurement problems Katharina Kaska.
Study of leakage current and effective dopant concentration in irradiated epi-Si detectors I. Dolenc, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž Jožef.
Edge-TCT and Alibava measurements with pion and neutron irradiated micro-strip detectors V. Cindro 1, G. Kramberger 1, I. Mandić 1, M. Mikuž 1,2, M. Milovanović.
RD50 RD50 workshop FreiburgKatharina Kaska 1 Determination of depletion voltage from CV, IV and CCE measurements on Pad Detectors Katharina Kaska, Michael.
1 G. Pellegrini The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors 3D Double-Sided sensors for the CMS phase-2 vertex.
1 An introduction to radiation hard Monolithic Active Pixel Sensors Or: A tool to measure Secondary Vertices Dennis Doering*, Goethe University Frankfurt.
Summary of CMS 3D pixel sensors R&D Enver Alagoz 1 On behalf of CMS 3D collaboration 1 Physics Department, Purdue University, West Lafayette, IN
D. Menichelli, RD50, Hamburg, august TSC, DLTS and transient analysis in MCz silicon Detectors at different process temperature, irradiation.
Charge Collection Study of Heavily Irradiated Silicon Microstrip Detectors Chris Lucas (University of Bristol) Irena Dolenc Kittelmann, Michael Moll, Nicola.
8 July 1999A. Peisert, N. Zamiatin1 Silicon Detectors Status Anna Peisert, Cern Nikolai Zamiatin, JINR Plan Design R&D results Specifications Status of.
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07 ATL-P-MN-0006 v.1 Development of non-inverting Silicon strip detectors for the ATLAS.
Effects of long term annealing in p-type strip detectors irradiated with neutrons to Φ eq =1·10 16 cm -2, investigated by Edge-TCT V. Cindro 1, G. Kramberger.
23 th November 2010 Possibly relevant new from RD50 G. Casse.
Silicon Detectors for the VELO Upgrade G. Casse University of Liverpool 1 VELO Upgrade Nikhef Nov
H.-G. Moser Semiconductor Laboratory MPI for Physics, Munich 11th RD50 Workshop CERN Nov Thin planar pixel detectors for highest radiation levels.
A. Macchiolo, 13 th RD50 Workshop, CERN 11 th November Anna Macchiolo - MPP Munich N-in-n and n-in-p Pixel Sensor Production at CiS  Investigation.
Charge Collection and Trapping in Epitaxial Silicon Detectors after Neutron-Irradiation Thomas Pöhlsen, Julian Becker, Eckhart Fretwurst, Robert Klanner,
G. Steinbrück, University of Hamburg, SLHC Workshop, Perugia, 3-4 April Epitaxial Silicon Detectors for Particle Tracking Overview on Radiation Tolerance.
Joachim Erfle Summary of measurements after first irradiation of HPK samples 19 th RD50 Workshop November 2011 CERN Joachim.
1/14 Characterization of P-type Silicon Detectors Irradiated with Neutrons M.Miñano 1, J.P.Balbuena 2, C. García 1, S.González 1, C.Lacasta 1, V.Lacuesta.
9 th “Trento” Workshop on Advanced Silicon Radiation Detectors Genova, February 26-28, 2014 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica.
Y.Unno, 4th Workshop on Advanced Silicon Radiation Detectors, Trento, Italy, Feb., Development of Radiation- tolerant p-type Silicon Microstrip.
Defect Engineering and Pad Detector Characterization Defect engineering: Search for hydrogen enrichment in silicon is still ongoing but takes time High.
Edge-TCT studies of heavily irradiated strip detectors V. Cindro 1, G. Kramberger 1, A. Macchiolo 3, I. Mandić 1, M. Mikuž 1,2, M. Milovanović 1, P. Weigell.
Annealing of CCE in HPK strip detectors irradiated with pions and neutrons Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1, Gregor Kramberger 1, Marko.
Update on charge collection annealing G. Casse, A. Affolder, P. P. Allport, V. Chmill, D. Forshaw, A. Greenall, I. Tsurin, T. Huse, 1 G. Casse,19th RD50,
The Sixth International "Hiroshima" Symposium Giulio Pellegrini Technology of p-type microstrip detectors with radiation hard p-spray, p-stop and moderate.
CNM double-sided 3D strip detectors before and after neutron irradiation Celeste Fleta, Richard Bates, Chris Parkes, David Pennicard, Lars Eklund (University.
Study on and 150  m thick p-type Epitaxial silicon pad detectors irradiated with protons and neutrons Eduardo del Castillo Sanchez, Manuel Fahrer,
Summary of Liverpool CC(V) Measurements A. Affolder, P. Allport, H. Brown, G. Casse, V. Chmill, D. Forshaw, T. Huse, I. Tsurin, M. Wormold University of.
Charge Multiplication Properties in Highly Irradiated Thin Epitaxial Silicon Diodes Jörn Lange, Julian Becker, Eckhart Fretwurst, Robert Klanner, Gunnar.
Giulio Pellegrini 27th RD50 Workshop (CERN) 2-4 December 2015 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona 1 Status of.
Studies on n and p-type MCz and FZ structures of the SMART Collaboration irradiated at fluences from 1.0 E+14 to 5.6E+15 p cm -2 RD50 Trento Workshop ITC-IRST.
Trench detectors for enhanced charge multiplication G. Casse, D. Forshaw, M. Lozano, G. Pellegrini G. Casse, 7th Trento Meeting - 29/02 Ljubljana1.
Giulio Pellegrini Actividades 3D G. Pellegrini, C. Fleta, D. Quirion, JP Balbuena, D. Bassignana.
Annealing effects in irradiated HPK strip detectors measured with SCT128 chip Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1,Gregor Kramberger 1, Marko.
Annealing effects in irradiated HPK strip detectors measured with SCT128 chip Igor Mandić 1, Vladimir Cindro 1, Gregor Kramberger 1, Marko Zavrtanik 1,
TCT measurements with strip detectors Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1, Gregor Kramberger 1, Marko Milovanović 1, Marko Mikuž 1,2, Marko.
G. Casse, ATLAS tracker upgrade, Genova, July Middle/Outer Radii: R&D plan in Europe G. Casse, University of Liverpool.
Investigation of the effects of thickness, pitch and manufacturer on charge multiplication properties of highly irradiated n-in-p FZ silicon strips A.
Changes of the particle detection properties of irradiated silicon microstrip sensors after room and elevated temperature annealing G. Casse, A. Affolder,
24/02/2010Richard Bates, 5th Trento workshop, Manchester1 Irradiation studies of CNM double sided 3D detectors a. Richard Bates, C. Parkes, G. Stewart.
Development of Silicon Microstrip Sensors in 150 mm p-type Wafers
Radiation damage studies in LGAD detectors from recent CNM and FBK run
Test beam results of MCz-Si detectors
Update on Annealing Studies for Severely Irradiated Silicon Detectors
Study of radiation damage induced by 26MeV protons and reactor neutrons on heavily irradiated MCz, FZ and Epi silicon detectors N. Manna Dipartimento.
A. Affolder, P. Allport, G. Casse University of Liverpool
Igor Mandić1, Vladimir Cindro1, Gregor Kramberger1 and Marko Mikuž1,2
Vladimir Cindro, RD50 Workshop, Prague, June 26-28, 2006
CCE measurements with Epi-Si detectors
Frank Hartmann on Behalf of CERN RD50 Collaboration
Forward-bias operation of FZ and MCz silicon detectors made with different geometries in view of their applications as radiation monitoring sensors J.
Igor Mandić1, Vladimir Cindro1, Gregor Kramberger1 and Marko Mikuž1,2
Presentation transcript:

Charge Collection, Power, and Annealing Behaviour of Planar Silicon Detectors after Reactor Neutron, Pion and Proton Doses up to 1.6×10 16 n eq cm -2 A. Affolder, P. Allport, G. Casse University of Liverpool

Miniature Silicon Micro-strip Sensors 13th RD50 Workshop, 10th-12th November 2008, CERN 2 Microstrips, ~1x1 cm 2, strips, µm pitch Micron/RD50 (4” & 6” wafers) – 300  m thick n-in-p FZ (V FD ~15V/~70 V) n-in-n FZ (V FD ~10 V) p-in-n FZ (V FD ~10V) Micron/VELO test structures – 300  m thick n-in-n FZ (V FD ~70V) HPK/ATLAS06 and ATLAS07 – 300  m thick n-in-p FZ (V FD ~160V) Micron/RD50 (4” & 6” wafers) – 140  m thick n-in-p FZ (V FD ~2-10 V) Micron/VELO test structures – 200  m thick n-in-n FZ (V FD ~90V) CNM/RD50 EPI – 150  m thick active + carry-wafer n-in-p p-in-n n-in-p MCz (V FD ~550 V) n-in-n MCz (V FD ~170 V) p-in-n MCz (V FD ~170 V)

Irradiation Sources 13th RD50 Workshop, 10th-12th November 2008, CERN 3 Irradiation and dosimetry (24 GeV Protons): CERN PS Irrad1 facility, Geneva Switzerland: M. Glaser, et. al. Irradiation and dosimetry (Neutrons): Triga Reactor, Jozef Stefan Institute, Ljubljana, Slovenia: V. Cindro, et. al. Irradiation and dosimetry (26 MeV Protons): Compact Cyclotron, Karlsruhe, Germany: W. de Boer, A. Dierlamm, et. al. Irradiation and dosimetry (70 MeV Protons): AVF Cyclotron at CYRIC, Sendai, Japan: Y. Unno, T. Shinozuka, et. al.

Pion Irradiations 13th RD50 Workshop, 10th-12th November 2008, CERN 4 Irradiation and dosimetry (Pions): Paul Scherrer Institut, Switzerland: M. Glaser, T. Rohe, et. al.

5 Experimental Setup Charge collection efficiency (CCE) measured using an analogue electronics chip (SCT128) clocked at LHC speed (40MHz clock, 25ns shaping time). –Measurements performed in chest freezer at a temperature of ~-25 °C with N 2 flush 90 Sr fast electron source triggered with scintillators in coincidence used to generate signal. The system is calibrated to the most probable value of the MIP energy loss in a non-irradiated 300µm thick detector (~23000 e - ). 13th RD50 Workshop, 10th-12th November 2008, CERN Update picture with newest setup

Neutron Summary 6 Both p-in-n FZ and p-in-n MCz sensors show insufficient charge collection for short strip regions (>5×10 14 n eq cm -2 ) n-in-n FZ, n-in-p FZ, and n-in-p MCz have similar CCE at these doses n-in-n FZ slightly better at doses < 5×10 14 n eq cm -2 n-in-n MCz shows the best performance as expected from CV measurements 900 V 13th RD50 Workshop, 10th-12th November 2008, CERN 500 V G. Kramberger, "Charge collection measurements on MICRON RD50 detectors", ATLAS Tracker Upgrade Workshop, Valencia December 2007, MCz p-n, Fz p-n

500 V Neutron Comparison 13th RD50 Workshop, 10th-12th November 2008, CERN 7 After ~5×10 14 n cm -2, n-in-n FZ, n-in-p FZ, n-in-p MCz very similar At higher voltage n-in-n MCz superior up to maximum fluence (10 15 n cm -2 ) –Need higher fluence data to determine if this continues p-in-n shows inferior performance as expected 900 V Appears once trapping dominates, all n-strip readout choices studied are the same after neutron irradiation

Charged Sources 13th RD50 Workshop, 10th-12th November 2008, CERN 8 24 GeV Protons –CERN PS –The “standard” so far –Long Irradiations Flux: 1-2×10 13 cm -2 h -1 –Limited periods during the year –Annealing during irradiation Environment ~30 C° Either include effects or cold irradiation 200 MeV Pions –PSI –Limited fluences 26 MeV Protons –Karlsruhe Compact Cyclotron –Easier access –Runs fairly often –High rates/short irradiations Flux: 1-3×10 15 cm -2 h -1 –No/little annealing during irradiation –Have to confirm hardness factor on IV/CCE 70 MeV Protons –CYRIC AVF Cyclotron –Similar advantages/issues as Karlsruhe –High rates/short irradiations Flux: 1-6×10 14 cm -2 h -1

24 GeV Proton Irradiations 13th RD50 Workshop, 10th-12th November 2008, CERN 9 The current standard for proton irradiation studies. Additional n-in-p FZ 6.2×10 15 n eq cm -2 and 1.0×10 16 n eq cm -2 pieces in hand.

Proton Hardness Comparison 13th RD50 Workshop, 10th-12th November 2008, CERN 10 After hardness correction, IV and CCE agree for all three proton sources studied with n-in-p FZ devices –Roughly ±10% error in fluence, ±0.5 C° error in temperature during measurement (Total ±15% error in current) Validates 70 MeV Protons from CYRIC for ATLAS sensor studies –24 GeV Protons from CERN PS will also be used when available Corrected to -25 C° 1×1 cm 2 area

n-in-p FZ Proton Comparisons 13th RD50 Workshop, 10th-12th November 2008, CERN 11 For n-in-p FZ devices, CCE from all 3 proton sources look the same –Investigations for other geometries/ substrates ongoing 900 V 500 V

n-in-p FZ Irradiation Comparisons 13th RD50 Workshop, 10th-12th November 2008, CERN 900 V V Neutrons and protons also very similar Might be signs that protons are slightly worse due to trapping at high fluences

Expected Sensor Power Sensor power/cm -25 C° with no annealing –Averaged across diode geometries and substrate types No significant difference seen above 5×10 14 n cm -2 At radius of ~4 cm from beam, sensors would generate ~260 mW/cm 2 –Significant challenge for cooling!! 13 Average power vs. fluence, corrected to 1×1 cm 2 area at -25C° ±10% error in fluence, ±0.5 C° error in temperature (Total ±15% error in power) 13th RD50 Workshop, 10th-12th November 2008, CERN

26 MeV Proton Irradiations 13th RD50 Workshop, 10th-12th November 2008, CERN 14 n-in-n FZ and n-in-p FZ look the same for proton doses studied so far –Study limited by part availability More parts sent to Karlsruhe –More wafers under process at Micron Charge seen with n-in-p FZ after 1.6×10 16 n eq cm -2 (expected maximum dose of innermost devices at SLHC)

Pion Irradiations 13th RD50 Workshop, 10th-12th November 2008, CERN 15 n-in-p MCz superior to n-in-p FZ after pion irradiation, as expected from diode CV measurements –Acts like n-in-n MCz after neutron irradiation Plan on confirmed charge particle behaviour of n-in-p MCz with 26 MeV protons from Karlsruhe –Under irradiation currently G. Kramberger, et.al., 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies), Barcelona April 2008,

Mixed Irradiations (MCz) 13th RD50 Workshop, 10th-12th November 2008, CERN 16   > 0 (dominant donor creation) for protons (more point defects than clusters)   < 0 (dominant acceptor creation) for neutrons (more clusters than point defects) E. Fretwurst et al., 11 th RD50 workshop Practical outcome: possible partial compensation of N eff, therefore better CCE at low voltages?

Mixed Irradiations (Neutrons+Protons) Both FZ and MCz show “predicted” behaviour with mixed irradiation –FZ doses add |N eff | increases –MCz doses compensate |N eff | decreases 13th RD50 Workshop, 10th-12th November 2008, CERN 17 1x10 15 n eq cm -2 Needs further study with both nMCz and pMCz substrates and differing mixed doses

Thin Sensors 18 13th RD50 Workshop, 10th-12th November 2008, CERN

150  m EPI - Neutrons 13th RD50 Workshop, 10th-12th November 2008, CERN 19 Produced by CNM Barcelona Significant charge (6.7 ke - ) measured after 8×10 15 n cm -2

EPI vs thin n-in-p FZ 13th RD50 Workshop, 10th-12th November 2008, CERN 20 Good CCE results with Epi! Drawbacks: difficult to process, expensive, limited sources of thick Epi (150  m), possible variability of performances!

Thin Summary-Neutrons 13th RD50 Workshop, 10th-12th November 2008, CERN 21 n-in-p EPI (150 um) slightly superior at higher neutron fluences

FZ n-in-n, 300  m, 1E16 n FZ n-in-p. 140  m, 1.6E15 n FZ n-in-p, 300  m, 1.6E15 n Thin Sensors (CCE)-Neutrons 13th RD50 Workshop, 10th-12th November 2008, CERN 22 After 2x10 14 n cm -2, same CCE at low voltages and than saturation for the thin sensor (~250V). After 5x10 14 n cm -2, same CCE at low voltages and than saturation for the thin sensor (~400V). FZ n-in-p, 300  m, ~2E14 n After 1.6x10 15 n cm -2, saturation for the thin sensor (~600V). After 3x10 15 n cm -2 the CCE of the 300  m thick devices becomes higher above 900V. After 7x10 15 n cm -2 the CCE of thin and thick sensors is the same up to 1100V. Above 7x10 15 n cm -2, ~10% higher CCE for the 140  m thick sensors, but within uncertainties

Thick/Thin Reverse Currents 13th RD50 Workshop, 10th-12th November 2008, CERN 23 >3×10 15 n eq cm -2, no significant gains in current (power) with thinner sensors

Annealing 24 13th RD50 Workshop, 10th-12th November 2008, CERN

n-in-p FZ Neutrons (1E15) 13th RD50 Workshop, 10th-12th November 2008, CERN 25 “Fine step” Annealing of the collected charge, HPK FZ n-in-p, 1E15 n cm -2

n-in-p FZ Neutrons (1E15) 13th RD50 Workshop, 10th-12th November 2008, CERN 26 “Fine step” Annealing of the collected charge, HPK FZ n-in-p, 1E15 n cm -2

n-in-p FZ 26 MeV Protons (1E15) 13th RD50 Workshop, 10th-12th November 2008, CERN 27 “Fine step” Annealing of the collected charge, Micron FZ n-in-p, 1E15 n cm -2 (26MeV p irradiation)

n-in-p FZ 26 MeV Protons (1E15) 13th RD50 Workshop, 10th-12th November 2008, CERN 28 “Fine step” Annealing of the collected charge, Micron FZ n-in-p, 1E15 n cm -2 (26MeV p irradiation)

n-in-n FZ Neutrons (1.5e15) 13th RD50 Workshop, 10th-12th November 2008, CERN 29 “Fine step” Annealing of the collected charge, Micron FZ n-in-n, 1.5E15 n cm -2

n-in-n FZ Neutrons (1.5e15) 13th RD50 Workshop, 10th-12th November 2008, CERN 30 “Fine step” Annealing of the collected charge, Micron FZ n-in-n, 1.5E15 n cm -2

Conclusions Planar, n-strip detector detectors have shown sufficient collected charge for innermost layers at SLHC assuming that: –Low threshold (2ke - ), low noise (500 enc) electronics achievable –Cooling can handle ~260 mW/cm 2 sensor power with -25 C° at sensor n-in-n MCz shows promise after neutral irradiation n-in-p MCz shows promise after charged irradiation –Need mixed, high dose irradiations n-in-p EPI shows some benefit relative to thin FZ after neutron irradiation –Power might be an issue Fine annealing performed after neutron/proton irradiations for n-in-p/n-in-n FZ –+30% CCE and -40% Power after 100 days annealing at 20 C 13th RD50 Workshop, 10th-12th November 2008, CERN 31

Backup 13th RD50 Workshop, 10th-12th November 2008, CERN 32

n-in-p sensors: FZ–black, MCz-red Neutron Irradiations 13th RD50 Workshop, 10th-12th November 2008, CERN 33 p-in-n –MCz slightly better than FZ –Insufficient CCE for tracking >5-10×10 14 n cm - 2 n-in-n –MCz much better than FZ –Higher dose MCz data needed n-in-p –FZ/MCz similar response –Charge seen after 1.5×10 16 n cm -2 n-in-n sensors: FZ (RD50)–black, FZ(Velo)- blue, MCz-red p-in-n sensors: FZ–black, MCz-red

Annealing Reverse Current 13th RD50 Workshop, 10th-12th November 2008, CERN 34 “Fine step” Annealing of the reverse current, HPK FZ n-in-p, 1E15 n cm -2

13th RD50 Workshop, 10th-12th November 2008, CERN 35 Material comparison: EPI n vs p, reactor neutrons