Spectra distortion by the interstrip gap in spectrometric silicon strip detectors Vladimir Eremin and.

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Presentation transcript:

Spectra distortion by the interstrip gap in spectrometric silicon strip detectors Vladimir Eremin and E. Verbitskaya, I. Eremin, Yu. Tuboltsev, N. Fadeeva, N. Egorov, S. Golubkov, W. Chen, Z. Li Ioffe Phisical – Technical Institute, St. Petersburg Research Instjtute of Material and Technology, Moscow Brookhaven National Lab., Upton, NY V. Eremin, PSD-9, Aberystwyth, September , 2011

Outline Motivation Detector entrance window structure Charge collection in the entrance window Electric field in inter-strip gap Charge collection in inter-strip gap Conclusions V. Eremin, PSD-9, September , 2011

NuSTAR-EXL detecting system in FAIR program V. Eremin, PSD-9, September , 2011

Specification for DSSD detectors in EXL RegionThickness (mm) Pitch (mm) Energy range (MeV) Total detectors area, m 2 A B minimum0.5 C0.1 and minimum1 D0.1 and n/d1.2 E (0.3)n/d1 E’0.30.1n/d1.5 V. Eremin, PSD-9, September , 2011

Wafer layout with full size 6.5x6.5 cm 2 DSSD Consortium: “Silicon detector lab.”, St. Petersburg, Russia Current density 3.8 nA/cm 2 V. Eremin, PSD-9, September , 2011

The problem counts energy E0 P2P1 Al thickness______________0 µm P + entrance window_______20 nm SiO 2 thickness____________700 nm Energy losses (5.5 MeV, Si) _130 keV/ µ m strip B SiO 2 strip A P1 P2 P + implant Al V. Eremin, PSD-9, September , 2011

P + -side effective window p + implant SiO 2 V. Eremin, PSD-9, September , 2011

Track at the planar detector entrance window (energy and charge losses) Dead layer SiO 2 +Al Defects at the SiO 2 /Si interface Radiation and processing defects in the bulk Back diffusion from the track V. Eremin, PSD-9, September , 2011

Electric field in the detector entrance window The effective window thickness for the developed detectors is 20 nm (for 5.5 MeV alphas) V. Eremin, PSD-9, September , 2011

The energy resolution components Spectrum of 210 Po measured by detector with optimized structure of p-n junction. The energy resolution of 8.1 keV. (From: E.Verbitskaya, et.al., Nucl. Instr. Meth.. B 84 (1994) 51) V. Eremin, PSD-9, September , 2011

Spectra for the strip region (alphas 238 Pu) Version 1 Effective thickness of entrance window: W eff = 110 nm Energy resolution keV V. Eremin, PSD-9, September , 2011 Version 2 Effective thickness of entrance window: W eff = 25 nm Energy resolution – 9.8 keV

The interstrip gap structure SiO 2 n - silicon Effective entrance window Potential extremum V. Eremin, PSD-9, September , 2011

Model for spectra response of interstrip gap A(x) = A0 – ε(  SiO2 – mX) Counts or dN/dA Amplitude A SiO 2 W eff Saddle point W eff Point generation – no charge sharing Symmetric E(X, Z) in the gap Linear W eff (Z) + _ Particle Strip 1Strip 2 Z X Spectra response SiO 2 Spectra shape is: dN/dA = 1/m V. Eremin, PSD-9, September , 2011

Potential in interstrip gap Parameters: Gap width – 10 um, Charge in SiO 2 – 4x10 14 cm -2, Si resistivity – 5 kOhm-cm, d = 300 um, V b = 100V X=0 X=0.5 um X=0.7 um X=1 um X=2 um X=3 um X=4 um X=5 um V. Eremin, PSD-9, September , 2011

Parameterization of potential extremum and W eff in the interstrip gap W max = 2.2 (X - X 0 ) 0.28 with X 0 = 0.6um W eff = ɣ W max ɣ = 0.6 for kT/q = 25 mV W eff V. Eremin, PSD-9, September , 2011

Alpha spectrum for interstrip gap + _ Z X Simulated “Gap spectrum” correlates with the experimental in major features: the energy range triangle shape Parameters: Gap width – 10 um, Charge in SiO 2 – 4x10 14 cm -2, Si resistivity – 5 kOhm-cm, d = 300 um, V b = 100V V. Eremin, PSD-9, September , 2011

Conclusions 1.The developed model predicts the main features of short range particle spectra measured with strip detectors: triangle shape of the spectra generated in interstrip gap. 2. The model can be simply extended for detection of any short range particles. 3.The model gives a background for parameterization of interstrip gap properties as an element disturbing the detector spectra response. Acknowledgement This work was supported by: Russian Academy of Sciences (program # 9C237) Physico-technical institute RAS (program # ГР0120ю080052) Consortium PTI-RIMST - “Silicon Detector Lab.” V. Eremin, PSD-9, September , 2011

Thank you for your attention V. Eremin, PSD-9, September , 2011