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Current spreading of III-nitride light-emitting diodes using plasma treatment Hsin-Ying Lee Ke-Hao Pan Chih-Chien Lin Yun-Chorng Chang Fu-Jen Kao Ching-Ting Lee
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Outline Introduction Experiment Results and Discussions Conclusions References
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Introduction 大部分傳統 LED ,都會發生因電極關係,造成在電極下, 電子電洞複合所產生的光,都會因電極不透光,而造成在 電極下的光都會被遮住,使 LED 整體亮度下降很多。
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sapphire MQW P-GaN N-GaN ITO P N 電極遮光 Refer sapphire MQW P-GaN N-GaN ITO P N CBL 光 Current Blocking Layer
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Structures of (a)LED A with CF 4 +O 2 plasma treatment and (b)LED B without plasma treatment. Experiment 300 × 300μm 2
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Current-voltage characteristics of Ni/Au contact with various plasma-treated n- type GaN. Results and Discussions
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plasma treatment without plasma treatment Current-voltage characteristics of LED A and LED B.
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Reverse current as a function of reverse voltage of LED A and LED B. plasma treatment without plasma treatment
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plasma treatment without plasma treatment Light output power–current characteristics of LED A and LED B. about 16%
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Far-field light emission distribution of (a) LED A and (b) LED B injected with pulse current of 200 mA pulse width=100 s and repetition frequency=1kHz.
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Improvement in the Light Output Power of GaN- Based Light Emitting Diodes by Natural-Cluster Silicon Dioxide Nanoparticles as the Current Blocking Layer Chun-Fu Tsai Yan-Kuin Su Chun-Liang Lin
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Schematic cross-sectional view of the epitaxial layers and GaN LED fabricated with SiO 2 nanoparticle CBL. 350 × 430μm 2
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SEM images of (a) the morphology of p-GaN surface, (b)the SiO 2 nanoparticles with ~20nm diameter, (c) SiO 2 nanoparticles cluster naturally in p-GaN surface pits, and (d) CBL pattern formed on p-GaN with SiO 2 nanoparticles. CCD images of (a) fabricated chip with size 350 × 430μm 2, (b) the SiO 2 nanoparticles CBL beneath Cr/Pt/Au pad.
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I-V and L-I characteristics of the reference and SiO 2 nanoparticles CBL LEDs. CBL-3.34V Ref -3.29V
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about 15.7% Room temperature EL spectra of the reference and SiO 2 nanoparticle CBL LEDs at 20 mA dc injection current.
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Conclusions 傳統 LED 製作 CBL ,可以有效的改變 LED 的電流路徑, 使其電流不通過 P 電極下方,可以有效的改善電極遮光的 問題,但在大電流操作下,容易造成電流聚集,使整體溫 度上升造成 LED 特性降低。
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