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STT-RAM Generator - Anurag Nigam
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Motivation Challenges in SRAM Solution High Leakage
Leakage current Challenges in SRAM High Leakage Solution Non-volatile memory
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Memory Technology Comparison
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STT-RAM bit cell overview
MTJ WL SL BL Oxide layer Free Ferro magnetic layer RP RAP Hard Ferro magnetic layer MTJ 1 MTJ 1 access transistor
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Bit-cell Design IMTJ = f (Vin, parameters) Behavioral current source
Need to solve differential equation How to solve differential equation ??
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Capacitor current equation
V I = C dV/dt
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Bit-cell design Editing CDF parameter to create behavioral source
componentName = isource I = f(V) Editing CDF parameter to create behavioral source
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Bit-cell design Write “1” Operation WL BL=0V SL=1V Switching Schematic
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Memory Interface STT-RAM Macro R’/W Write Driver Timing Block
Sensing Block Memory Array WLen SAen CLK Data In Data Out R/W ADDR CL WLS R’/W STT-RAM Macro
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Write Driver TBUF BL SL Write “1” BL =0 SL=1 Write “0” BL=1 SL=0
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Sense amplifier design
Test bit-cell
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R-V characteristic of MTJ
RAP RP Two states (RAP and RP) Resistance is a function of voltage
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Schematic automation Leaf-cell schematic creation
Bitcells – Manual (using current/voltage sources) Decoders – Skill Sense amp. Timing block, Write driver – Manual Memory array creation 1Kb array - Skill
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Schematic automation Decoder Write Driver Memory Array
procedure(Create7to128DecoderSchematic(libname,cellname)) Write Driver procedure(CreateWriteDrSchematic(libname,cellname,C)) Memory Array procedure(CreateSTTRAMSchematic(libname,cellname,R,C))
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1Kb STT-RAM array 128 x 8 array Write Driver Timing block
Sense amplifier
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Read and Write operation
clk Data<0> Out<0> Write “1” Read “1” Write “0” Read ”0”
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Deliverables STT-RAM bit-cell SPICE model
Skill script to generate complete functional STT-RAM Class-specific work Importing bit-cell model in ADE Skill script development
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Thanks for your time !
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