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Noise Characteristics of High-Performance InGaAs PIN Photodiodes Prepared by MOCVD Yung-Sheng Wang,Shoou-Jinn Chang,Yu-Zung Chiou,and Wei Lin Electrochemical Society, 155 11 J307-J309 2008 YS.Chen
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Outline Introduction Experiments Results and discussion Conclusion References
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Introduction The optical communication network has become an essential tool in our daily life. The optimum wavelength range for long-distance optical communication is between 1.3 and 1.55 mm. In this wavelength range, InGaAs is the most preferred material for photodetector applications.
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Experiments Figure 1. (a)Top-view photograph and (b)schematic diagram of the fabricated InGaAs PIN photodiode.
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Results and discussion Figure 2. Measured dark I-V and C-V characteristics of the fabricated device. bark current -5V : 105pA -30V : 217pA Capacitance -5V : 0.475pF -20V : 0.385pF
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Figure 3. Measured frequency responses of the packaged InGaAs PIN photodiode. -5V : 6.7GHz -20V : 8.2GHz
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Figure 4. Spectra responses of the packaged InGaAs PIN photodiode -5V 1310nm : 71.9% 1550nm : 93.6% -20V 1310nm : 72.9% 1550nm : 95.2%
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Figure 5. Measured noise-power spectra of the fabricated InGaAs PIN photodiode.
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Figure 6. Room-temperature noise spectral density as a function of dark current measured at 100 Hz.
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Conclusion With −5 V applied bias, it was found that the reverse leakage current and capacitance of the photodiode were only 105 pA and 0.475 pF, respectively. For a given bandwidth of 1 kHz and a given bias of −5 V, it was found that the NEPs of our InGaAs PIN photodiode were 4.53×10 −14 W at 1.31μm and 2.95×10 −14 W at 1.55μm,which correspond to D* values of 3.69×10 12 cm Hz 0.5 W −1 at 1.31μm and 5.67×10 12 cm Hz 0.5 W −1 at 1.55μm.
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References Yung-Sheng Wang,Shoou-Jinn Chang,Yu-Zung Chiou,and Wei Lin, “Noise Characteristics of High-Performance InGaAs PIN Photodiodes Prepared by MOCVD,” Electrochemical Society., pp. J307–J309, May. 2008.
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