1. Noise Characteristics of High-Performance InGaAs PIN Photodiodes Prepared by MOCVD Yung-Sheng Wang,Shoou-Jinn Chang,Yu-Zung Chiou,and Wei Lin Electrochemical Society, 155 11 J307-J309 2008 YS.Chen

2. Outline Introduction Experiments Results and discussion Conclusion References

3. Introduction The optical communication network has become an essential tool in our daily life. The optimum wavelength range for long-distance optical communication is between 1.3 and 1.55 mm. In this wavelength range, InGaAs is the most preferred material for photodetector applications.

4. Experiments Figure 1. (a)Top-view photograph and (b)schematic diagram of the fabricated InGaAs PIN photodiode.

5. Results and discussion Figure 2. Measured dark I-V and C-V characteristics of the fabricated device. bark current -5V ： 105pA -30V ： 217pA Capacitance -5V ： 0.475pF -20V ： 0.385pF

6. Figure 3. Measured frequency responses of the packaged InGaAs PIN photodiode. -5V ： 6.7GHz -20V ： 8.2GHz

7. Figure 4. Spectra responses of the packaged InGaAs PIN photodiode -5V 1310nm ： 71.9% 1550nm ： 93.6% -20V 1310nm ： 72.9% 1550nm ： 95.2%

8. Figure 5. Measured noise-power spectra of the fabricated InGaAs PIN photodiode.

9. Figure 6. Room-temperature noise spectral density as a function of dark current measured at 100 Hz.

10. Conclusion With −5 V applied bias, it was found that the reverse leakage current and capacitance of the photodiode were only 105 pA and 0.475 pF, respectively. For a given bandwidth of 1 kHz and a given bias of −5 V, it was found that the NEPs of our InGaAs PIN photodiode were 4.53×10 −14 W at 1.31μm and 2.95×10 −14 W at 1.55μm,which correspond to D* values of 3.69×10 12 cm Hz 0.5 W −1 at 1.31μm and 5.67×10 12 cm Hz 0.5 W −1 at 1.55μm.

11. References Yung-Sheng Wang,Shoou-Jinn Chang,Yu-Zung Chiou,and Wei Lin, “Noise Characteristics of High-Performance InGaAs PIN Photodiodes Prepared by MOCVD,” Electrochemical Society., pp. J307–J309, May. 2008.