2. Carrier generation and recombination

3. A sudden increase in temperature increases the generation rate. An incident burst of photons increases the generation rate. This will continue until a new equilibrium state is attained.

4. Heat or photons

5. Carrier generation and recombination

6. Carrier generation and recombination thermal equilibrium conditions

7. n type extrinsic semiconductor

8. Inhomogeneous doping profile creates an electric field

9. Time rate of change of densities thermal equilibrium conditions

11. Time rate of change of densities thermal equilibrium conditions “low-level injection”

13. Defects in the crystal Electron falls down attracting a hole The hole jumps up attracting the electron Electron falls down to defect and then falls down to the valence band. Defect energy level

14. Carrier generation and recombination

15. Hall effect + -

16. Hall effect – model rocket engine + -

17. Hall effect

19. Example 4.8 Consider an n- type GaAs Hall effect device with the geometry shown in the figure. Find the majority carrier concentration in the carrier mobility. The relevant numbers are:

22. Simple three-dimensional unit cell