1. High efficiency GaN-based LEDs using plasma selective treatment of p-GaN surface Young-Bae Lee, Ryohei Takaki, Hisao Sato, Yoshiki Naoi, and Shiro Sakai phys. stat. sol. (a) 200, No. 1, 87– 90 (2003) / DOI 10.1002/pssa.200303253

2. Experiment

4. Results and Discussions Treated LED : 有 Ni/Au （ 10nm/10nm ） TCL 和電極下經過 plasma treatment Untreated LED ：有 Ni/Au （ 10nm/10nm ） TCL 而電極下無經過 plasma treatment Untreated LED without pad metal ：無 Ni/Au （ 10nm/10nm ） TCL 但電極下經過 plasma treatment

5. Conclusions Based on this method, the light output power of the nitrogen plasma treated UV-LED with a emission peak of 355 nm is increased by 40% compared to that of the untreated LED.

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