1. 1ICC Proprietary MEMS DEVICE WAFER LEVEL PACKAGING TECHNICAL PRESENTATION Customer Device Wafer

2. Process Modification Required as follows: - Reduction of Bond pads to half of existing bond pads size. - Since bond pad size has been reduced, the distance between 2 chip isolation lines will be more now and additional scribing / dicing area can be provided for our SWP Process Flow Changes: New smaller Bond Pads  Passivation  Bond Pad Opening  Testing  Ship Wafers to ICC 2ICC Proprietary TECHNICAL PROPOSAL FOR ULTRASOUND MEMS DEVICE WLP

3. 3ICC Proprietary TECHNICAL PROPOSAL FOR MEMS DEVICE WLP Chip 1

4. 4ICC Proprietary TECHNICAL PROPOSAL FOR MEMS DEVICE WLP Chip 1

5. Chip 2 Chip 3 Chip 4 Schematic plan showing a possible EXISTING chip configuration Active Area Scribe / Dicing Area Bond Pads Isolation line Bond pad size = 100 micron Sq. 5ICC Proprietary

6. Chip 2a Proposed NEW chip configuration Bond pad size = half original pad Active Area Scribe / Dicing Area New Bond Pads Chip 2a 6ICC Proprietary

7. Proposed NEW chip configuration Chip 2a Bond pad size = 50 micron Sq. With 20 micron Sq Opening at center. 7ICC Proprietary

8. Proposed NEW chip configuration Chip 2a Via fabrication At the scribe zone Via Size 20um Sq. X 50 um 8ICC Proprietary

9. Proposed NEW chip configuration Chip 2a Via passivation PECVD process 9ICC Proprietary

10. Proposed NEW chip configuration Chip 2a Interconnection At the scribe zone 10ICC Proprietary

11. Proposed NEW chip configuration Chip 2a Top Passivation layer 11ICC Proprietary

12. Proposed NEW chip configuration Chip 2a Glass wafer Bonding 12ICC Proprietary

13. Proposed NEW chip configuration Backside of the Wafer after Back grinding and polishing 13ICC Proprietary

14. Proposed NEW chip configuration 1 st Passivation on backside 14ICC Proprietary

15. Proposed NEW chip configuration Back side pad opening 15ICC Proprietary

16. Proposed NEW chip configuration Routing to new Bump pads 16ICC Proprietary

17. Proposed NEW chip configuration 2 nd Passivation Film on bump pads 17ICC Proprietary

18. Proposed NEW chip configuration UBM pads 18ICC Proprietary

19. Proposed NEW chip configuration Solder Bumping 19ICC Proprietary

20. Proposed NEW chip configuration Dicing Process ICC Proprietary 20ICC Proprietary