1. Jhen-Yu Yang 1

2. Outline Introduction Experiment Results and discussion Conclusion References 2

3. Introduction In this paper, we report a new type of photo detector: a planar Metal-Oxide-Semiconductor (MOS) diode fabricated on a SOI substrate which exhibits record sensitivities in a very wide spectral range, from 245nm to 880 nm. The detector we introduce uses a relatively thick double insulator SiO2-HfO2 stack (in contrast to standard MOS structures having only a thin tunneling SiO2 insulator), which requires a voltage stress process in order to conduct when illuminated. 3

4. Experiment 4

5. Results and discussion 5

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10. Conclusion The measured responsively in the UV and visible wavelength ranges is several times larger than that of all reported SOI based photo detectors and is similar to the responsivily obtained for wide band gap semiconductors. However, the present detectors are superior in terms of their very wide spectral response. Further improvement can be obtained by optimization of the insulator stack sub-layer thickness and implementation of a wider bandwidth ARC that is effective in the UV spectral region. 10

11. References V. Mikhelashvili, D. Cristea, B. Meyler, S. Yofis, Y. Shneider, G. Atiya, T. Cohen-Hyams, Y. Kauffmann, W. D. Kaplan, and G. Eisenstein, “A highly sensitive broadband planar metal-oxide semiconductor photo detector fabricated on a silicon-on-insulator substrate, ” J. Appl. Phys. 116, 074513 (2014) 11

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