1. Summary of Results and Development of Online Monitor for T-mapping/X-ray-mapping in KEK-STF Y. Yamamoto, H. Hayano, E. Kako, S. Noguchi, M. Satoh, T. Shishido, K. Umemori, K. Watanabe(KEK) abstract Vertical test for 1.3GHz 9-cell cavity has been routinely carried out over one year since 2008 in KEK-STF. Temperature mapping (T-mapping) system using 352 carbon resistors was introduced to identify the heating location at thermal quenching of the cavity. The T-mapping system identified perfectly the heating location in every vertical test for S1-Global project. As X- ray-mapping system, 142 PIN diodes were used, and the x-ray emission site was detected under heavy field emission. During the vertical test, it is convenient to display the result of T- mapping and X-ray-mapping by online monitor system. For this purpose, the new online monitor system was developed by using EPICS (Experimental Physics and Industrial Control System) and Java script, and introduced in recent several vertical tests. As a data acquisition system, nine data loggers (MW100, YOKOGAWA) are used, and signals from totally 540 channels are stored every 0.1 sec. The online display for T-mapping and X-ray-mapping is updated automatically every five seconds. In this report, the summary of T-mapping/X-ray-mapping result and the online monitor system will be described in detail. Introduction The new vertical test facility and the electro-polish (EP) facility were constructed for ILC (International Linear Collider) and ERL (Energy Recovery Linac) project at KEK-STF in 2008. It is possible to do all processes, except annealing, in STF after the delivery of cavities. Successful commissioning of this vertical test system was carried out with AES#001, after solving a few technical issues. Identification of heating locations during the thermal quenching is an important task of vertical test, in addition to the measurement of Q 0 – E acc curve and maximum gradient. For this purpose, the new T-mapping system was developed and introduced [1], which allows to identify the hot spots with an efficiency close to 100%. A cavity occasionally quenches due also to field emission, which is caused by the electron bombardment. In this case, an associated x-ray emission would be detected. Recently, an X-ray- mapping system using 120 PIN diodes is completed and attached around each iris region. Correlation was found between the heating and the x-ray emission in the first and third vertical test of MHI#9. In the third test, the pre-heating phenomenon, which level is generally small and appears before quench, was also observed with the x-ray emission. Probably, the electron impact is responsible for the pre-heating phenomenon in this test. # of carbon resistor : 352 + 44, # of PIN diodes : 120 + 22, Data sampling time : 0.1sec, Measured pass-band modes : π ~ 3π/9 Summary The T-mapping system identified perfectly the heating location at the quench during the vertical tests for S1-Global project in STF. The right figure shows the summary of the heating cell for every vertical test. There is no excess bias in the heating cell. The main cause is the thermal quench due to defect or contamination. However, in many cases, any target was not observed around the heating location. This is the most common case in STF. The new online monitor system using EPICS and Java was introduced in recent several tests. It is easy to identify the heating location by the online T-mapping display. WEPE013 Transition of heating location for MHI#7 1 st V.T. @25/Jun/2009 2 nd V.T. @15/Sep/2009 3, 5π/9 @35, 43MV/m 6, 7, 8π/9, π @33~34MV/m π(17MV/m) 3π/9(31MV/m) 4π/9(27MV/m) 6~8π/9(17~19MV/m) 5π/9(25MV/m) EP2 : 20μm Degreasing(FM-20) +HWR+HPR pre-EP: 5μm EP1: 100μm EP2: 20μm Ethanol+HWR+HPR 5, 7π/9 @32, 38MV/m 6π/9 @41MV/m 3, 4, 8π/9, π @27~30MV/m 5, 6π/9 @25~27MV/m 7π/9 @28MV/m 3, 4, 8π/9, π @16~17MV/m Transition of heating location for MHI#8 EP2 : 30+20+20μm Degreasing(FM-20) +HWR+HPR pre-EP: 5μm EP1: 100μm EP2: 20μm Ethanol+HWR+HPR 6π/9 @39MV/m 3, 4, 5, 7, 8π/9, π @17~20MV/m EP2 : 20μm Degreasing(FM-20) +HWR+HPR 1 st V.T. @9/Jul/2009 2 nd V.T. @29/Oct/20093 rd V.T. @26/Nov/20094 th V.T. @18/Feb/2010 6π/9 @40MV/m 3, 8π/9 @34, 40MV/m EP2 : 20μm (low current density) Degreasing(FM-20) +HWR+HPR cell #2, 172° cell #2, 86° 6π/9 @40MV/m 3, 4, 5, 7, 8π/9, π @16~18MV/m 5π/9 @39MV/m 3, 4π/9 @28~29MV/m 1 st π @27MV/m 7, 8π/9, 2 nd π @25~34MV/m Transition of heating location for MHI#9 1 st V.T. @3/Sep/2009 2 nd V.T. @12/Nov/2009 EP2 : 20μm Degreasing(FM-20) +HWR+HPR pre-EP: 5μm EP1: 100μm EP2: 20μm Ethanol+HWR+HPR 4π/9, π @27~28MV/m 5, 6, 7, 8π/9, π @27~35MV/m 7, 8π/9, π @17~27MV/m EP2 : 20μm Degreasing(FM-20) +HWR+HPR 3 rd V.T. @16/Dec/2009 black red green blue Results of T-mapping for MHI#7-#9 Heating location is different at every vertical test for these cavities. On the other hand, the same location was heating for MHI#5 and #6 [1]. This means the quality of EBW is improved for MHI#7-#9. However, the problem, which is the gradient drop below 20MV/m, still remains at STF. Even in such a low quench field, any target was not found around the heating locations in almost all cases. For MHI#8, two defects (one pit and one bump) were observed. The pit type defect was removed by the local grinding machine. After that, the gradient was improved from 16 to 27MV/m. References [1] Y. Yamamoto, et al., “A new cavity diagnostic system for the vertical test of 1.3GHz superconducting 9-cell cavities at KEK-STF”, PAC’09, Vancouver, Canada, (2009), TU5PFP076. [2] Y. Yamamoto, et al., “Cavity diagnostic system for the vertical test of the baseline SC cavity in KEK-STF”, SRF’07, Beijing, China, (2007), WEP13. [3] T. Saeki, et al., TTC meeting 2010, FNAL, U.S. “http://indico.fnal.gov/conferenceDisplay.py?confId=3000” Pre-heating observed at 3 rd V.T. for MHI#9 These figures show the pre-heating observed at the third vertical test for MHI#9. The left figure shows the time trend, and the right one shows the correlation between the gradient and the heating. In the purple framework of the right figure, the T-mapping at the quench is shown. Before the quench, the pre-heating location was on the meridian of the cell #8 and #9. However, at the quench, the cell #2 was heating. The heating at the quench is higher and pulse-like, compared to the pre- heating. Quench location Pre-heating location Pre-heating location was consistent with the highest x-ray emission. This means the phenomenon is induced by the electron impact. If the yield of electron is increased, this location may be quenched. Highest x-ray region Quench location Pre-heating location Online display for T-mapping & X-ray mapping cavity# of V.T.Gradient [MV/m] Radiation level [μSv/h] P.D. (Top) [V] P.D. (Bottom) [V] larger direction MHI#51 st 27.3>999>>10>10top MHI#52 nd 19.713451top MHI#53 rd 27.130300– MHI#61 st 25.7>999>108top MHI#64 th 19.6000– MHI#66 th 27.7>99900130top MHI#71 st 16.54120410bottom MHI#72 nd 33.6>99900>141top MHI#81 st 16.025600.5bottom MHI#82 nd 26.8141005bottom MHI#83 rd 17.5000– MHI#84 th 37.8>99900>143top MHI#91 st 25.0>99900>1010top MHI#92 nd 15.913600.50top MHI#93 rd 27.0>99900>140top Comparison of radiation level between top and bottom direction from P.D. From the signals of PIN diodes attached on the top and bottom flanges of a cavity, it is found the direction of the higher x-ray emission is top or bottom. If the ratio is unbalanced, any common cause may be concerned. In STF, the top direction is the higher radiation level at many of vertical tests. This means a common cause is related to the field emission. For example, a contamination or particulate is falling down during the assembly working in the clean room, or brown stains [3] remain inside the cavity even after HPR. π 8π/96π/9 3π/9 π 1 st π 2 nd π Top flange Bottom flange 1 st π 2 nd π RF processing Online monitor system For convenience of the DAQ and the data analysis during the vertical test, the online monitor system using EPICS (Experimental Physics and Industrial Control System) and Java script was developed and introduced in the recent tests. The online display for the T-mapping and X-ray-mapping is updated every five seconds and the maximum temperature is identified in this span. It is possible to change the threshold level for the heating easily. 23MV/m26MV/m27MV/m28MV/m Time trend of PIN diode signalsTime trend of carbon resistors During the power rise, the pre-heating phenomenon was observed on the online display. At the quench field, the different location was heating as mentioned above.