1. K. GANAPATHI RAO (13031D6003) Presence of Mr. Sumair sir

2. Introduction. Sputtering Process. Sputtering Yield. Sputtering Deposition Film Growth. Application Of Sputtering. Additional Methods. Applications Of Thin Film.

3. Zero Dimension 3D 2D 1D

4. Thin films are thin material layers ranging from fractions of a nanometer (monolayer) to several micrometers in thickness.

6. Sputtering is a term used to describe the mechanism in which atoms are ejected from the surface of a material when that surface is stuck by sufficiency energetic particles. First discovered in 1852, and developed as a thin film deposition technique by Langmuir in 1920. Metallic films: Al-alloys, Ti, Tantalum, Nickel, Cobalt, Gold, etc.

7. Use large-area-targets which gives uniform thickness over the wafer. Control the thickness by Deposition time and other parameters. Even materials with very high melting points are easily sputtered. Sputtered films typically have a better adhesion on the substrate. Sputtering can be performed top-down.

9. Vacuum. Inert gas. Power supply. Sputtering gas.

10.  Ions are generated and directed at a target.  The ions sputter targets atoms.  The ejected atoms are transported to the substrate.  Atoms condense and form a thin film.

11.  Defined as the number of atoms ejected per incident ion.  Determines the deposition rate.  Depends on:  Mass of bombarding ions.  Energy of the bombarding ions.  Direction of incidence of ions (angle).  Pressure.

12. Molecule size – need to be about the same size as the sputtered material – too big cause layer deformation and yield a lot of material on walls. – too small cause layer deformation w.r.t not proper ejecting atoms. Target deformation = Less uniform deposition.

13. Ion energy Vs. sputter yield:

14. There is a probability that atom C will be ejected from the surface as a result of the surface being stuck by atom A. In oblique angle (45º-90º) there is higher probability for sputtering, which occur closer to the surface.

15. Sputter yield peaks at <90º. Atoms leave the surface with cosine distribution.

16. Pressure reduction – allow better deposited atoms/molecules flux flow towards the substrate. Expressed by “Mean free path” which is the average distance an atom can move, in one direction without colliding at another atom.

17. Sputtered atoms have velocities of 3-6 E5 cm/sec and energy of 10-40 eV. Many of these atoms deposited upon the substrate. Thus, sputtered atoms will suffer one or more collision with the sputter gas.

18.  The sputter atoms have:  Arrive at surface with reduce energy (1-2 eV).  Be backscattered to target/chamber.  The sputtering gas pressure can impact on film deposition parameters, such as Deposition rate and composition of the film.

20. Thin film deposition: – Microelectronics – Decorative coating – Protective coating Etching of targets: – Microelectronics patterning – CMOS, NMOS, PMOS fabrication Surface treatment: – Hardening

21. Reactive & Non reactive sputtering RF & DC sputtering Magnetron sputtering Collimated sputtering Ion-Beam sputtering

22. Microelectronics CPU processors, cell phones, ipod, watches, batteries, Solar Panels

23. AR (anti-reflective coatings) On cars, jewelry, mirrors, night vision goggles Oxidation resistance on cutting tools, chemical factories. Medical drug delivery Applications Of Thin Film Technology

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25. Hand book of thin film deposition process and techniques- By Krishna Seshan Thin Film Phenomena - Kasturi L. Chopra http://en.wikipedia.org/wiki/Thin-film_memory http://www.uccs.edu/~tchriste/courses/PHYS549/549lectures/ http://nptel.iitm.ac.in/syllabus/syllabus.php?subjectId=11510201 9 http://nptel.iitm.ac.in/syllabus/syllabus.php?subjectId=11510201 9 http://www.azom.com/article.aspx?ArticleID=8796