1. Haga clic para modificar el estilo de texto del patrón 3D detectors Giulio Pellegrini Instituto de Microelectrónica de Barcelona, IMB-CNM-CSIC, Barcelona, Spain

2. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 2 Outline  Introduction: 3D detectors fabricated at IMB-CNM  3D strip detectors Irradiation and annealing behavior Lab tests: charge collection in 3D strips High bias operation Test beam at SPS CERN  Applications and experiments interested in 3D technology  Other developments  Conclusions

3. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 3 3D detectors  3-d array of p and n electrodes that penetrate into the detector bulk  Lateral depletion Maximum drift and depletion distance set by electrode spacing (<< wafer thickness) Reduced charge sharing due to E-field shape: higher signal in one pixel Fast collection time: reduced charge trapping Reduced depletion voltage  Technologically complex - micromachining planar3D Rad hard First proposed by Parker et al. Nucl. Instr. Meth. A, 395 (1997)

4. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 4 Electrode fabrication: 1.ICP etching of the holes: Bosch process, ALCATEL 601-E 2.Holes partially filled with LPCVD poly 3.Doping with P or B 4.Holes passivated with TEOS SiO 2  Columns etched from opposite sides of substrate and don't pass through full thickness  All fabrication done in-house  ICP is a reliable and repeatable process (many successful runs) Double-sided 3D at CNM Hole aspect ratio 25:1 10µm diameter, 250µm deep P- and N-type substrates, 285µm thick Devices designed and fabricated at CNM

5. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 5 3D strip detectors Leakage current of p-type 3D strip detector 3D detectors are mainly a candidate for the sLHC pixel layers, but it is still interesting to study 3D strip detectors because testing is much easier! Before irradiation, T = 20ºC Backside biased, strip and guard ring grounded  V FD ~ 40V, I = 40–120 pA/column  Only 2 detectors, of 19 tested, bad (not shown) Breakdown at less than 5V (catastrophic defect?) All others work far beyond full depletion

6. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 6 Irradiation and annealing  P-type strip detector irradiated in FZK Karlsruhe with 26 MeV protons to 1E16 1MeV n eq /cm2  Accelerated annealing at 80ºC Acceleration factor of 7400 for the reverse annealing with respect to RT  Tested at -10ºC in probe station Two competing effects in I-V curves:  Annealing of leakage current at low V.  From ~200V: Charge multiplication? More pronunced and earlier for longer annealing time

7. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 7 ALIBAVA lab tests: Collected charge for irradiated devices  ALIBAVA system: Beetle front end (LHCb), LHC speed bi-polar amplifier (25ns peaking time), full analogue readout  Detectors glued to ceramic base boards with RC pitch adaptors from VTT/Helsinki Institute of Physics  150V except non-irradiated sample, 18V Electron collecting strip detectors, Sr-90 source, -10º to -15º Calibration with planar strip detector: n- bulk 300 µm thick, 1 cm long AC coupled p+ readout strips (hole collection), 80 µm pitch Plateau value taken as full charge collection in planar device

8. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 8 CCE with increasing bias voltage Detector response after a fluence of 10 16 1MeV n eq /cm 2 Charge recovers! Multiplication effect observed.

9. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 9 High bias operation  Increased CCE for high fluences > 5×10 15, close to 100% CCE for 10 16 n eq /cm 2  More than 100% CCE for fluences 0.5 to 2×10 15 n eq /cm 2 ! Strong charge multiplication Also observed in heavily irradiated planar devices with kV bias Bias voltage applied maximum possible before excess current or noise, typically 250 to 350V For comparison with planar devices: I. Mandic et al., “Measurement of anomalously high charge collection efficiency in n+p strip detectors irradiated by up to 10 16 n eq /cm 2 ” Nucl. Instr. Meth. A 603(3), 2009 100% CCE

10. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 10 Strip test beam work  Charge collected in testbeam is very close to lab tests  Irradiated devices: increasing signal above ~150 V. Strong charge multiplication seen.  For 10 15 : ~100% CCE at 150V, ~140% CCE at 200V, ~200% CCE at 250V CNM 3D p-type strip detectors tested with Silicon Beam Telescope with CMS readout (APV25 front end, analogue readout) and 50 ns shaping at CERN SPS (225GeV pions), -10ºC. Landau MPV Charge multiplication confirmed by test beam studies

11. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 11 Strip testbeam work – comparison with planar  Irradiated planar sensors far from being depleted at 500V  Noise level for the planar sensors is ≈ 0.1 fC  At highest fluence just enough signal left for measurements of planar sensors, SNR≈10 Comparison with Hamamatsu (HPK) planar strip sensors tested in same test beam, same readout, at 500V Data normalized to 320µm thickness (non-irr) 100%

12. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 12 Signal to noise/signal to threshold  Need high S/N ratio but for binary systems (e.g. ATLAS) S/T even more important criterion Threshold required to keep the noise occupancy below a certain limit must be increased strongly when charge multiplication is present  Test beam had large common mode that could not be reduced completely Noise measurements performed in the lab with Beetle-based ALIBAVA readout  Charge multiplication beneficial for S/T and S/N up to certain point 10 16 1MeV n eq /cm 2 -26ºC Charge multiplication is good!

13. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 13 Applications and experiments interested in 3D technology  IBL and Atlas upgrade  TOTEM  LHCb experiment  Synchrotrons  Neutron detectors

14. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 14 Radiation-hard 3D detectors for the (s)LHC  Inner pixel layer (IBL) replacement for ATLAS Fluence of 4.4 x 10 15 1MeV neq/cm 2  Super-LHC – Atlas and CMS 10 * luminosity upgrade on present LHC Fluence up to ~ 1 x 10 16 1MeV neq/cm 2  LHCb VELO upgrade Integrated fluence ~ 1 x 10 16 1MeV neq/cm 2  TOTEM experiment Integrated fluence ~ 1 x 10 16 1MeV neq/cm 2  Design fluences for ATLAS sensors (includes 2x safety factor) : Innermost Pixel Layer ~ 5cm radius :1.6 x 10 16 1MeV neq/cm 2 = 500 Mrad Outer Pixel Layers ~ 30cm radius: 3 x 10 15 1MeV neq/cm 2 = 150 Mrad

15. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 15 Atlas pixels Atlas pixels, FE-I3 and new FE-I4 fabrication and irradiation for Insertable B-Layer and testbeam. In the framework of the Atlas 3D collaboration (http://test-3dsensor.web.cern.ch/test- 3dsensor/). Common layout in the Atlas 3D collaboration (CNM,FBK,SINTEF, Stanford). New FE-I4 design (2x2 cm 2 ). A module should be fabricated with 3D detectors. CNM already fabricated 24 6” wafers to test the bump bonding at IZM and 8 4” wafers to test the bump bonding at SELEX. Dummies include one structure to test pixel detectors with ALIBAVA read out electronics. Work done with IFAE and Glasgow Uni.

16. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 16 CMS 3D pixels Work done with PSI and IFCA. We have designed a new mask with single chips and one module 8x2. We are also implementing a new bias grid for 3D detectors without punch trough. Fabrication started at CNM.

17. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 17 TOTEM 3D strips Work done with CERN. We have designed in collaboration a new mask to fabricate TOTEM strip detectors with 3D technology. Strip pitch 66um AC coupled. 3cm long n+ readout

18. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 18 LHCb upgrade with 3D pixel detectors Pion beam Individual pion tracks telescopeDUT Use of Medipix3 for the future LHCb upgrade. Full pixel detector matrix. Secondary 120 GeV pion beam from SPS 4 Timepix, 2 Medipix planes in telescope DUT: double sided 3D N-type sensor from CNM/Glasgow Expected track extrapolation error: < 3 μm 7 ADC30 ADC 7 ADC shared Measurements at 0º. No true with tilting Preliminary results with scan to 10º. 6 medipix2 3d irradiated with neutrons and waiting for bump bonding

19. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 19 Synchrotron Applications  B16 Test beamline at the Diamond Light Source RAL  Monochromatic X-ray beam of 14.5keV  Beam size FWHM were measured as 4.5±0.3 µm in x 6.7±0.3 µm in y THL~25% THL~50% THL~75% Reduced level of over counting and under counting in 3D 7%4%3D P –Type 7%3%3D N –Type 7%0%Planar Corners*CentreInefficiencies Work done with Diamond light source and Glasgow Uni. Detector substrate raster scanned relative to the beam

20. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 20 Medipix2 3D detectors  Medipix and Timepix electronics 65k single-photon counting pixel array 55 x 55 µm square pixels Electron or hole collection 100ns shaping time Counting device with counter on each pixel  Each photon hit is compared to a pair of adjustable thresholds  Pixel counts no. of accepted hits during acquisition time Timepix allows time over threshold to be recorded  Only one photon per frame is recorded in this mode Double sided 3D sensors compatible with standard pixel read out electronics. High voltage on the back of the pixels like in planar devices.

21. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 21 Stripixels (RD50 framework) 3D strip detectors with 2D positioning on one side. Double metal process. Mask already designed, detectors are being fabricated at CNM. Work done with Brookhaven National Laboratory.

22. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 22 Other developments  Active edges  APD  Detector with charge multiplication  Neutron detectors  Flip-chip  Radiation Effects Studies

23. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 23 Active edges Features: Implanted edge side Backplane and edge in the same electrode Designed detectors: PAD Microstrips Beam Stop MediPix2 Circular Mask designed and fabricated. Fabrication run defined and all step tested Very important technology for tiling and edge sensitive detectors

24. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 24 Avalanche Photo Diode  Project: Fabricate a Reach-Through Avalanche Photodiode for direct X-ray detection: Thick active region (300 µm)  Increase of the absorption efficiency for medium energies (< 15 KeV) Optimisation of the multiplication region  Different doping and technological steps of the P-type layer Optimisation of the edge region  Different edge structures to ensure the uniformity of the gain Different sizes and layouts  Square devices of 1, 25 and 100 mm2  Rectangular devices  Linear and square monolithic arrays. TCAD simulation

25. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 25 P-type strip detectors with trench to enhance the charge multiplication effect Is charge multiplication the future of radiation detectors? Fabricate a p-type strip detector with small gain  Similar signal before and after irradiation - Multiplication occurs at low bias voltage - Gain should be limited between 2 and 10: Applications: - Radiation Hard Detectors - Tracking Detectors - Charge multiplication permits the fabrication of thinner detectors

26. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 26 Neutron detection with 3D detectors Detection mechanism: New 10 B enriched compounds B 10 H 14 C 2 B 10 H 12 [B 12 H 12 ] 2- Advantages: Contain many boron atoms in only one molecule Useful physical and chemical properties: Can be homogeneously distributed in adhesive polymers Can fill micro-holes 3D detectors for higher efficiency (planar efficiency = 4-5%) Geometry may increase efficiency MCNPX

27. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 27 Flip-Chip  Flip-chip technology is now available commercially at CNM facilities through the spin-off X-ray Imatek.  Extended work done with Medipix2 and Atlas FE-I3 and FE-I4 read out pixel chips. Techniques:  High density Flip-chip  Sn/Ag, Sn/Pb bumping Equipment:  ATV reflow oven with vacuum  SET FC150 flip chip machine  UBM deposited with an electroless method CERN Courier 2010

28. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 28 Radiation Effects Studies  SiGe BiCMOS technologies for the ATLAS Upgrade Front End Electronics (Inner Detector and LAr)  IBM’s 0.13 (8WL) & IHP’s 0.25 (SGB25V) SiGe technologies Radiation hardness evaluation Understanding radiation degradation mechanisms Other devices (R, MOS, power LDMOS…) Radiation degradation simulation Modeling  Proposal of one SiGe BiCMOS technology for the IC- FE design

29. V JORNADAS SOBRE LA PARTICIPACION ESPAÑOLA EN FUTUROS ACELERADORES LINEALES. 25-26, October 2010. Valencia Giulio Pellegrini 29 Conclusions 3D detectors:  Technology available at CNM for different configurations  Evidence of charge multiplication in testbeam and lab tests after irradiation  Different experiment and applications may be interested. Others:  Charge multiplication must be studied and understood.  CNM is working mainly in radiation hard device but other applications benefit from the technology developments.  Flip-chip is now available commercially. Research institutes will benefit of a discounted price.