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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester1 Development of silicon strip-module for very high radiation environment G. Barbier, F. Cadoux, A. Clark, D. Ferrere, S. Gonzalez-Sevilla, D. La Marra, G. Pellereti, M. Weber (Univ. of Geneva) K. Hanagaki, W. Okamura (Osaka Univ.) K. Hara (Univ. of Tsukuba) Y. Ikegami, T. Kohriki, S. Terada Y. Unno (KEK)
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester2 Introduction SLHC x10 higher luminosity of LHC Impact to silicon microstrip region Radiation damage Occupancy sensorn-in-p short strip module ? readout hybrid ? Short strips 2.4 cm Long strips 9.7 cm
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester3 Integration concepts Tight cooling contact, Low-mass, Automatic assembly, … Hybrid glued to sensors. These glued to bus tape. This glued to cooling substrate. Module modularity production, QA, repairs, etc. ➡ parallel tasks reparability and replaceability possibility of Z-overlapping Stave
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester4 Module Current SCT barrel module Next SCT module Double side module Sensor size10cm x 10cm Strip length2.4cm n-in-p 1280 strips (74.5um pitch) 4 hybrids (separated) with 20 ABCN ASICs each bridging over the sensors Double side module Sensor size 12cm x 6cm Strip length12cm p-in-n 768 strips (80um pitch) 1 hybrid (wrap-round) with 12 ABCD3T ASICs bridging over the sensors
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester5 Front-end ASIC ABCNext front-end ASIC (250 nm IBM CMOS6 technology) Binary architecture, 128 channels Analog blocks: Preamplifier, shaper, discriminator (differential threshold) Individual threshold trimming correction per channel Internal calibration circuit Positive and negative signal polarities Linear voltage regulator on-chip, shunt regulator Digital blocks: Pipeline memory length of 6.4 µs Derandomizer buffer (42 events length) Two-clocks schema to allow different readout rates (40/80 MHz) Block diagram of the ABCN
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester6 Circuit Diagram of Hybrid The hybrid is loaded with 20 FE ASICs (ABCN), each having 128 readout channels. KEK hybrid provides the full specifications operation of ABCNext chips. redundancy operation two sets of bus lines bypass scheme for dead chip various powering schemes individual powering for Vcc (2.2V) and Vdd (2.5V) voltage regulator for Vcc two types of shunt regulator for serial powering application
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester7 Circuit Diagram of Hybrid The hybrid is loaded with 20 FE ASICs (ABCN), each having 128 readout channels. KEK hybrid provides the full specifications operation of ABCNext chips. redundancy operation two sets of bus lines bypass scheme for dead chip various powering schemes individual powering for Vcc (2.2V) and Vdd (2.5V) voltage regulator for Vcc two types of shunt regulator for serial powering application
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester8 Layout of Hybrid Layers Layer 2 (inner) Layer 1 (front side) Layer 4 (back side) Layer 3 (inner) L1 and L2 include the main circuit patterns for ASICs with redundancy lines. L3 and L4 are mainly for the power distribution and grounding, respectively. To evaluate grounding scheme, analog and digital ground can be separated.
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester9 Hybrid design rule Back side Front side Hybrid after mounting FE chips, R C components and a 0.8mm pitch miniature connector at the right end. Min. Line Width0.1mm Min. Gap0.09mm Min. Via-hole0.1mmΦ Min. Thr.-hole0.3mmΦ Taiyo Industrial Co., LTD 136mm x 28mm 0.260 0.165
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester10 Button Plating also called pads-only plating or spot plating, limiting an area of the via- and through-hole plating The total weight of bare FPC is 1.91g. A considerable weight reduction of 1.18g has been achieved compared with an usual plating.
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester11 Hybrid construction The hybrid backed with a 400 um thick and 112 mm wide carbon-carbon sheet is designed to bridge over the silicon sensor avoiding any interference to the sensor surface. The carbon-carbon bridge having large heat conductivity of 670W/m/K transfers the generated heat to the heat sink located at the legs of the bridge. The total weight (excluding electrical components) is 4.25 g, having 0.00425 X 0 equivalent radiation lengths.
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester12 Base Board A TPG baseboard acts as a mechanical core, a thermal conductor to transfer the heat generated in the sensors to the cooling pipe, and a path for electrical high voltage. A parylene coating technique is adopted to prevent delimitation of the substrate. AlN facings have precision holes for the module mounting. dots of thermal adhesive Thickness: 0.3mm
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester13 Wire bonding scheme In order to achieve higher-density, a direct wire bonding (pitch adaptor less) scheme between sensors and FE chips is adopted. The maximum fanning angle amounts to 16 degrees. We made wire bonding test modules and confirmed the direct wire bonding scheme.
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester14 DAQ system We have two DAQ systems. Modified current SCT DAQ system Reuse the current resources However, the data transfer rate is limited to 40MHz. New NI DAQ system (Geneva) NI PXI-6562 6 channels digital WF generator/analyzer 200/400 Mbps per channel SDR/DDR LVDS signals, per-channel direction control Software: LabVIEW 8.6 configuration files through XML (+schema) scripted generation and multi-record acquisition
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester15 The module temperature is controlled with a cooling loop. In order to prevent dew condensation, dry nitrogen is filled in the box. Module adaptor-board static lines through DIP switch 12 out of 16 dynamic I/O lines of NI 6562 SHV input for sensor bias, temp readout Single module test setup
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester16 High-voltage power-supply iSeg EHS-8210n-F (6U) 8 channels up to 1000 V & 8 mA SHV connectors CAN-USB + LabView control application The leakage current is in agreement compared with data of sensors measured by HPK. IV Geneva module
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester17 Threshold scan Threshold scan results are after trimming each channel threshold at 1.5 fC. Quite uniform threshold voltage distributions were obtained. Channel number Threshold [mV] Geneva module
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester18 Gain and Noise Quite uniform distributions for gain and ENC were obtained. Channel number 0 1200 Channel number 01200 Gain [mV/fC] ENC [e] 500 1000 0 50 100 0 Geneva module
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester19 Gain and Noise II ENC Hybrid0, 2 and 3 ~570 e Hybrid1 ~ 620 e Gain [mV/fC]ENC [e] Geneva module
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester20 Evaluation for long strip sensors The characteristics of the readout ASIC were evaluated with different length microstrip sensors connected to the input of the ASIC. The readout hybrid was mounted at the sensor edge. We made the sensor which had 4 different strip lengths, by wire bonding on the sensor.
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester21 ENC for long strip sensors We also measured ENC with connecting external capacitances instead of sensors. Excess of ENC in the larger input capacitance region was observed. The reason is the increase of the parallel noise, since the bias resistance of the sensor became small with wire bonding on the sensor. Detector capacitance
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester22 Thermal FEA simulations (Geneva) Detailed FEA simulations ➡ thermal performance 3D model (ANSYS, Abaqus) Parameters under study: power/chip cooling temperature convection/radiation (gas temperature) thermal grease thickness
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester23 Thermal test module We are preparing a thermal test module to confirm thermal FEA simulations.
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester24 4 modules test setup Test 4 modules together in common test-box, in order to investigate interference between modules.
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester25 Super-Module program We are planning to install 8 double-sided modules in a realistic support structure: Super-module, including Service bus DC-DC voltage regulator prototype board Module control circuit board (BCC board) Super-Module control circuit board (SMB) Super-Module interface board for DAQ PC (HSIO/SMB interface board)
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25/02/2010 Y. Ikegami, KEK Advanced Silicon Radiation Detectors, Manchester26 Summary and Plans First full double-sided module was built by DPNC Geneva. The electrical tests results so far are rather good, and more to come KEK module is also ready to test. A cross check between the KEK module and Geneva one will be started soon. Short-mid term schedule (~summer) Module assembly build and test remaining individual modules (total 8 modules) test 4-modules together at each site (Geneva and KEK) Super-Module program We are planning to install 8 double-sided modules in a realistic support structure at Geneva site.
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