1. PFC Company profile
2015/04/23
Presenter by Jason Chang

2. Agenda SMC Introduction PFC Introduction
Power Device Assembly Plant in Shunde

3. SMC Group Introduction
SMC :Established in 1952, SMC has been a pioneer in manufacturing ceiling fans, microwave ovens, DVD players, digital cameras, laser printer modules and LED lighting products in China
A global enterprise operating in seven locations across China, Hong Kong, Taiwan and the USA with over 3,000 employees 3

4. SMC Group Introduction
Our Vision
To become a world leader recognized for technological innovation
Our Mission
To strengthen our strategic position as an expert in contract manufacturing, optics and imaging components, energy efficient semiconductors, and LED lighting products
To aggressively develop proprietary technology and grow our intellectual properties portfolio, expand our property investments and business development, and maximize return on investment

5. SMC Group Introduction
SMC operates in three major business areas with continuous investment in high potential business ventures for long-term profitability and expansion
SMC
Manufacturing
Technology
Investments
Electrical Appliances &
Ceiling Fans
Contract Manufacturing
(Multi-Media Division)
LED / IC Packaging
LED Lighting
Enterprise Software
Solutions
(Appeon Division)
Cloud Computing Solution
(Nimboxx Division)
Semi-Conductor
(PFC Division)
Technology Venture
Investment
(MDCL/Red Flag)
Property
Development
Transportation
Business
(Taxi Division)

6. Leaders visit SMC

7. Agenda SMC Introduction PFC Introduction
Power Device Assembly Plant in Shunde

8. PFC Introduction
Founded in 2006, PFC is a leading global manufacturer and supplier of power discrete semiconductor
R&D based in USA and operations in Taiwan
PFC serves the consumer electronics,computing, communications, industrial, and automotive markets
PFC offers :a wide array of diodes, rectifiers, and other discrete components in various packages and configurations based on its patented technology

9. Introduction Of PFC Schottky
A. PFR Low-Vf Mos Schottky
BSuper Low-VF Rectifier (SLVF®)

10. Planar Schottky Rectifier (MBR) Schottky Barrier Metal
Passivation
Contact Metal(Al)
Guard Ring
Guard Ring P+ P+ N
N- EPI N+
N+ Substrate
Back Metal (Ti-Ni-Ag)

11. PFR Cell Structure
Device Symbol: P+ N- N+
Poly P+

12. PFR MOS-Schottky cell Structure
At Reverse Bias P+ N- N+
Poly
Reverse Leakage Current
Depletion Region
Advantage:
(1). With both Lower Vf and Lower Ir
(2). Lower Vf (by Low turn on voltage of MOS channel)
(3). Lower Ir (by Low P-N junction leakage and well reverse pinch-off MOS channel)

13. Rectifier Wafer Technology Comparison
Device
PN-Junction Diode
Fast Diode
Schottky Barrier Diode
PFC
MOS-SKY
Forward Voltage, Vf
High
Very-High
Low
Ultra-Low
Reverse Leakage Current, Ir
Surge reliability
Thermal immunity
Switching Speed, (1/trr)

14. Comparison of MOS-Schottky and traditional Schottky
Device
MOS-Schottky
SBD
Structural
CMOS
Schottky barrier metal
Process
IC CMOS process
Diode Process
Capability
Excellent
Fair
Reliability

15. Forward voltage Comparison between
PFR sereies and SBD
PFR 100V
PFR
STD
STD SCHOTTKY 100V
標題字體要統一 15

16. Super Low-VF MOS Rectifier (SLVF®)
B. Introduction Of PFC
Super Low-VF MOS Rectifier (SLVF®)

17. PFC SLVF® Rectifier (PTR)
Termination Area
Active Area
Field OX
N+ Substrate
N- Epi
Patent application
1. Taiwan:
2. China:
3. U.S.A.

18. PFR Cell Structure

19. Reverse Recovery Curve Compare

20. Introduction of Super Junction MOS
2015/04/23
Presenter by Jason Chang

21. SMPS trends 5 years ago Now 5 years in the future ??? W / inch³
Thermal concern???
30W / inch³
10W / inch³
Super Junction

22. Planar MOS vs. SJ MOS SJ MOSFET
Reduce Channel Resistance compared with Planar
Suitable for Low Rds(on) MOSFET
Smaller chip is required with same Rds(on)
Difficult to make (sub um/under Half um process)

23. Trench & Multi Layer structure
Trench MOSFET
Hard process and field control
Difficult deep trench fill uniformity ( Void)
Need well control deep trench angle
Major Player: Txx, Vxx,
Multi layer MOSFET
Process precise and field control
Stable Parameter, uniform process easy to control
Major Player : Ixx, Sxx,

24. PFC Device vs. Ixx Test Condition : 240W PC power @ PFC stage
Package : TO-220
+0.2%

25. PFC Device vs. Ixx Test Condition : 500W PC power @ PFC stage
Package : TO-247
+2.03%

26. PFC Device Product Roadmap – SJ MOS
　Rds(on)\ Vds
500V
600V
650V
700V
800V 2A
(1.4Ω) V 4A
(1Ω) 6A
(600mΩ)
11A
(380mΩ)
15A
(280mΩ) V　
20A
(190mΩ)
Red area : First priority Yellow area : Second priority

27. Applications
LED
Automotive
Industrial
Consumers

28. Major Customers

29. Agenda SMC Introduction PFC Introduction
Power Device Assembly Plant in Shunde

30. SMC Multi-Media Products Co. Ltd.
Found in 1995, SMCMM is one of the full service contract manufacturing arms of the SMC Group focusing in optics, imaging and electronic devices.
Manufacturing base in Shunde, Guangdong with 1,600 employees and shop-floor space over 500,000 sq. ft.

31. Assembly Packaging Process Flow31 31 31

32. Surface Mount Packages
Package Line-up
Surface Mount Packages
Capacity
Axial Leaded Packages
TO (Power) Packages
Mini SMA
10kkpcs / M
DO-201
5kkpcs / M
TO-262
1kkpcs / M
SMA
R-6
TO-263
3kkpcs / M
SMB
TO-220
15kkpcs / M
TO-277
12kkpcs / M
ITO-220
SOD-123/323/523
16kkpcs / M
TO-247
2kkpcs / M
改為Package Roadmap 32

33. Technology Road Map 2009 10’ 11’ 12’ 13’ 14’ 15’ 16’ 17~
GaN 600V Device
High Current IGBT > 60A
Low Current IGBT< 60A 600V~1200V
High Performance SR Mosfet
Super Junction Mosfet
G III MOS-Schottky (PTR type 30V~250V)
Generation II MOS-Schottky (PTR type 80V~120V)
Generation I MOS Schottky ( PFR type)
’ ’ ’ ’ ’ ’ ’ ~

34. Thanks for your attention