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- Herve Grabas - Ecole Superieure d’Electicite 1 Internship presentation - University of Chicago – 3 sept. 2009
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Contents Project description Detectors in High Energy Physics Signal processing for Pico-second time resolution Detector to Chip integration Chip structure and characteristics Operation of the chip Storage cells Design 2 Internship presentation - University of Chicago – 3 sept. 2009 2
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Acknowledgements 3 Internship presentation - University of Chicago – 3 sept. 2009 3
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Contents 4 Internship presentation - University of Chicago – 3 sept. 2009 4
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Project description At the present time: PMT High gain High bandwidth Low noise In the future: MCP-PMT’s All of the above Smaller path-lengths Possible tailoring Readout electronics: integrated analog memory and ADC 5 Internship presentation - University of Chicago – 3 sept. 2009 5
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Contents 6 Internship presentation - University of Chicago – 3 sept. 2009 6
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Detectors HEP detectors structure 7 Internship presentation - University of Chicago – 3 sept. 2009 7
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Particle measurements Mass m Velocity Momentum p 8 Internship presentation - University of Chicago – 3 sept. 2009 8 p = m The goal of a HEP detector is to measure one of these three characteristics
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Calorimeter The goal of a calorimeter is to measure the particle's energy loss in a dense medium 9 Internship presentation - University of Chicago – 3 sept. 2009 9 Calorimeters gives the particle’s energy but requires a lot of radial space
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Cerenkov angle measurement Cerenkov formula: cos n 10 Internship presentation - University of Chicago – 3 sept. 2009 10 Cerenkov light detectors give the velocity of the particle and also require a lot of radial space
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Time-of-flight measurement Reconstruction of the particle trajectory Determination of the time of flight of the particle 11 Internship presentation - University of Chicago – 3 sept. 2009 11 Time-of-flight detectors can be very thin
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Photomultiplier tubes Photo-electric effect Secondary emission effect 12 Internship presentation - University of Chicago – 3 sept. 2009 12 Big electron path-length ~10cm
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MCP detector principle 13 Internship presentation - University of Chicago – 3 sept. 2009 13 Input window Photo-cathode Micro-channel plate Anode plate <1cm
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Photo-electric effect 14 Internship presentation - University of Chicago – 3 sept. 2009 14 Photocathode Secondary electrons Advanced structures
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Micro-channel plates 15 Internship presentation - University of Chicago – 3 sept. 2009 15 40microns glass MCP - Incom
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Amplification principle Secondary emission Very small path-length High gain: 10 5 High space resolution: pore size Best to date: 2 m 16 Internship presentation - University of Chicago – 3 sept. 2009 16
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Anode plate 17 Internship presentation - University of Chicago – 3 sept. 2009 17 Delay line readout: position resolution <100 m AND time to pico-second range
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18 Internship presentation - University of Chicago – 3 sept. 2009 18
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Contents 19 Internship presentation - University of Chicago – 3 sept. 2009 19
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Single threshold 20 Internship presentation - University of Chicago – 3 sept. 2009 20
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Multiple threshold 21 Internship presentation - University of Chicago – 3 sept. 2009 21
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Constant fraction discriminator 22 Internship presentation - University of Chicago – 3 sept. 2009 22
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Waveform sampling and digital signal processing 23 Internship presentation - University of Chicago – 3 sept. 2009 23
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Simulation Results 24 Internship presentation - University of Chicago – 3 sept. 2009 24
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Contents 25 Internship presentation - University of Chicago – 3 sept. 2009 25
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Anode plate 26 Internship presentation - University of Chicago – 3 sept. 2009 26
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27 Internship presentation - University of Chicago – 3 sept. 2009 27
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Contents 28 Internship presentation - University of Chicago – 3 sept. 2009 28
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29 Internship presentation - University of Chicago – 3 sept. 2009 29 Chip general sketch
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30 Internship presentation - University of Chicago – 3 sept. 2009 30 Timing generator
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31 Internship presentation - University of Chicago – 3 sept. 2009 31 Sampling cells
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32 Internship presentation - University of Chicago – 3 sept. 2009 32 ADC’s
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33 Internship presentation - University of Chicago – 3 sept. 2009 33 Token controlled readout register
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34 Internship presentation - University of Chicago – 3 sept. 2009 34 Spec:
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Contents 35 Internship presentation - University of Chicago – 3 sept. 2009 35
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Operating of the chip Writing Cell writing Trigger event Reading 36 Internship presentation - University of Chicago – 3 sept. 2009 36
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Contents 37 Internship presentation - University of Chicago – 3 sept. 2009 37
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38 Internship presentation - University of Chicago – 3 sept. 2009 38 Storage cell principle V in wr C in V out rd V in wr C in V out rd V in wr C in V out rd Write stateIntermediate stateRead state
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Storage cell issues Input bandwidth Leakages Charge injection 39 Internship presentation - University of Chicago – 3 sept. 2009 39
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40 Internship presentation - University of Chicago – 3 sept. 2009 40 Write state bandwidth V in wr C in V in C in R on
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41 Internship presentation - University of Chicago – 3 sept. 2009 41 Leakages in the cell V stored C in R off Switch leakages Capacitor leakages
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42 Internship presentation - University of Chicago – 3 sept. 2009 42 Charge injection V in wr C in V in + Q/C in
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43 Internship presentation - University of Chicago – 3 sept. 2009 43 Input switch
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44 Internship presentation - University of Chicago – 3 sept. 2009 44 Input resistance With Matlab Comparison of Matlab and Spice
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45 Internship presentation - University of Chicago – 3 sept. 2009 45 Small signal model Cutting frequency:
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46 Internship presentation - University of Chicago – 3 sept. 2009 46 Simulations:
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47 Internship presentation - University of Chicago – 3 sept. 2009 47 Non-linear storage cell
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Large signal analysis The output is not linear Subthreshold voltage are not stored 48 Internship presentation - University of Chicago – 3 sept. 2009 48
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49 Internship presentation - University of Chicago – 3 sept. 2009 49 Saturation V in (sat) value function of R L
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50 Internship presentation - University of Chicago – 3 sept. 2009 50 Output with and without saturation
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51 Internship presentation - University of Chicago – 3 sept. 2009 51 Linearity fit
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52 Internship presentation - University of Chicago – 3 sept. 2009 52 Small signal analysis
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53 Internship presentation - University of Chicago – 3 sept. 2009 53 Bandwidth
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54 Internship presentation - University of Chicago – 3 sept. 2009 54 Cell issues
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55 Internship presentation - University of Chicago – 3 sept. 2009 55 Read and write sequencing WriteIntermediate stateRead
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56 Internship presentation - University of Chicago – 3 sept. 2009 56 Read and write state
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Cell issues Leakages: due to the switch Charge injection 57 Internship presentation - University of Chicago – 3 sept. 2009 57
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58 Internship presentation - University of Chicago – 3 sept. 2009 58 Linear storage cell
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59 Internship presentation - University of Chicago – 3 sept. 2009 59 Cell with real current source
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60 Internship presentation - University of Chicago – 3 sept. 2009 60 DC characteristic Input (blue) Output(black)
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61 Internship presentation - University of Chicago – 3 sept. 2009 61 Linear fit
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62 Internship presentation - University of Chicago – 3 sept. 2009 62 Small signal analysis
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63 Internship presentation - University of Chicago – 3 sept. 2009 63 Input and output bandwidth
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64 Internship presentation - University of Chicago – 3 sept. 2009 64 Transient signals
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Contents 65 Internship presentation - University of Chicago – 3 sept. 2009 65
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66 Internship presentation - University of Chicago – 3 sept. 2009 66 Cell design
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67 Internship presentation - University of Chicago – 3 sept. 2009 67 Layout IBM 130nm CMRF-8-SF
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68 Internship presentation - University of Chicago – 3 sept. 2009 68 Storage cell assembly IBM 130nm CMRF-8-SF
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69 Internship presentation - University of Chicago – 3 sept. 2009 69 Channel layout IBM 130nm CMRF-8-SF
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70 Internship presentation - University of Chicago – 3 sept. 2009 70 Chip layout IBM 130nm CMRF-8-SF
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71 Internship presentation - University of Chicago – 3 sept. 2009 71 Conclusion
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