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Introduction to Chalker- Coddington Network Model Jun Ho Son
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Hall Effect Classically explained, Lorentz force Linear relationship between current and Hall voltage
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Quantum Hall Effect Low Temperature/high magnetic field
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Quantum Hall effect
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Why is Hall Conductance Quantized? Quantum mechanics needed, but no interaction Laughlin’s argument – Gauge Invariance TKNN Invariant (Integer) -> Associate chern number to the quantum number.
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Protected Edge Mode Chiral edge state Absence of backscattering, robust against disorder Semi-classical “skipping orbits”
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Phase Transition in Quantum Hall System Plateau Only have peak at the transition
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Anderson Localization and Quantum Hall Phase Transition E DOS disorder E DOS e Localized state at edges, extended state at centers -> Insulator at plateau, finite conductance at crossing extended localized
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Chalker-Coddington Network Model Simplified model for disordered Integer Quantum Hall transition Quantum Hall transition as tunneling/scattering and percolation
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Motivation : tunneling between electron orbits around equipotential line Alternative treatment: 1D edge modes and scattering between two edge modes Chalker-Coddington Network Model Chalker and Coddington (1988)
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Simplify : square electron orbits arranged in checkerboard pattern Scattering at the vertices Disorder introduced by randomness in phase gain between two vertices Chalker-Coddington Network Model
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Build quasi-1D geometry –narrow, long strip (usually 10^5~10^6) Build a transfer matrix that describes electron propagation along the strip or the prism Transfer Matrix Approach T T T T T
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Main Interest : How fast 1D wavefunction decays out along one-dimensional direction? –Insulator : decays quickly –Metal : extended through the length. Lyapunov exponent of transfer matrices characterize this “decay speed” Transfer Matrix Approach Metal Insulator Length Wavefunction Magnitude
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Transfer Matrix Approach
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QR Decomposition
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Behavior Insulator
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Critical Exponent
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Why is this model interesting? Conceptual interest – Contains all qualitative/some quantitative information Critical Exponent Topological Invariant Fulga et al (2012) – Analytical Features : Mapping to Dirac equation Ho and Chalker (1995 ), field-theoretic model Ryu et al (2009) Numerically Cheap – Brute-force diagonalization is often bad……
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Quantum Spin Hall Effect
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Topological Insulator Such “topological phases” can occur under different dimensions/symmetries Ryu et al. (2010) Quantum Hall System Quantum Spin Hall System
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Network Model of 2D Topological Insulators Add additional degrees of freedom, constrain random phase/scattering matrix to obey the symmetry Obuse et al(2007), Fulga et al(2012) Obuse et al(2007),
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Network Model of 2D Topological Insulators Insulator-Metal- insulator transition instead of Insulator- Insulator transition Obuse et al(2007)0
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3D Network Model
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3D Extension? – Stacked 2D network model Weak topological insulator Chalker and Dohmen(1995), Obuse et al(2014) – Special quantum-classical mapping to study the model that belongs to class C Ortuno et al(2009) – Another approach?
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Surface states of topological insulator -> three 1D orbits on sphere –Scattering between orbits within sphere Can simplify further as cubic geometry 3D Network Model Construction
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Stacking clusters in face-centered cubic lattice Cutting out the hexagonal prism -> Quasi- 1D geometry 3D Network Model Construction
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Inter-cluster nodes and intra-cluster nodes –Inter-cluster nodes : parameterized by a single parameter, similar to 2D model –Freedom to choose intra-cluster nodes, in contrast with 2D network model 3D Network Model Construction
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Result Insulator Metal Mobility edge
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Conclusion Chalker-Coddington model gives numerically cheap method to understand disordered quantum hall transition The model can be extended to 2D topological insulator Extension to 3D?
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