1. Section 6 Lecturer : Ms Alicia A/p Philip By MOHAMMAD ZULFADHLI B. MOHAMMAD ASRI (EP090795) MUHAMAD AMIRUN BIN MUSTAFA KAMAL (EEO88163) BIPOLAR JUNCTION TRANSISTOR (BJT)

2. ABSTRACT This transactions brief present an electro-thermal Volterra model for calculating third-order intermodulation distortion (IM3) in common emitter (CE) bipolar junction transistor (BJT) RF amplifier. The model includes nonlinearities caused by input-output cross product, which previous studies have tended to overlook, in spite of their significance for RF devices. The nonlinear I-V and Q-V sources of the model are presented also as functions of temperature to analyze how distortion is affected by dynamic temperature variations inside the device. The model is organized to facilitate the recognition of different IM3 components, especially those arising from out-of- band second-order distortion voltages. In additional, this transaction brief presents a technique for characterizing the nonlinearity coefficients of a RF power BJT and studies the behavior of intermodulation distortion as a function of bias point and of out-of-band impedance matching. Optimum bias and matching point are established for the test amplifier and a good correlation is demonstrated between the calculated and measure data. Finally, this transactions brief shows that some serious memory effects cannot be seen when simulated using the traditional Spice BJT model, but can be detected using the polynomial Volterra model.

3. TYPES OF ABSTRACTS Informative abstracts An informative abstract includes the information that can be found in a descriptive abstract (purpose, methods, scope) but also includes the results and conclusions of the research and the recommendations of the author.

4. KEY PROCESS ELEMENT  Reason for writing BJT also can be used in the immune ESD protection in Deep Submicron Technology with SCR-Incorporated. In addition, most of the commercial applications such as automotive applications and control domestics of appliances contain the temperature sensors.  Problem This problem is often solved by means of external linearization technique like pre-distortion, which often requires that distortion of the amplifier is memoryless and well behaving

5.  Methodology The first limitation occurs when a high again, the pre amplifier should have a high-output impedance. The second limitation occurs when the DC bias current transistor Q1 and Q2 is not very low. The third limitation occurs when the casscode amplifier is used to drive another stage.  Result Since the value of parameter in the high frequency model of active element depend on the dc operating point of the devices, comparison between the performance of cascode amplifier and modified cascode amplifier should be done at different operating point

6. COMPONENT OF ABSTRACT These are the component used in this abstract.  Problem  Background information  Aim  Methodology  Results  Limitations

7. LANGUAGE USED  British English  Simple Present Tense / Past Tense  Clear and Powerful

8. EXAMPLE :- SIMPLE PRESENT TENSE The model includes nonlinearities caused by input-output cross product, which previous studies have tended to overlook, in spite of their significance for RF devices The model includes nonlinearities caused by input-output cross product, which previous studies have tended to overlook, in spite of their significance for RF devices SIMPLE PAST TENSE  BJT also can be used in the immune ESD protection in Deep Submicron Technology with SCR-Incorporated.

9. LENGTH CHARACTERISTICS OF ABSTRACT This abstract has medium length and varies to the discipline. It is written in single paragraphs only and using only 157 words.