1. Date of download: 6/3/2016 Copyright © ASME. All rights reserved. From: Porous Silicon Morphology: Photo-Electrochemically Etched by Different Laser Wavelengths J. Nanotechnol. Eng. Med. 2015;6(1):011003-011003-7. doi:10.1115/1.4030768 (a) Schematic drawing of a conventional single-tank etching cell and (b) photograph of the Teflon etching cell Figure Legend:

2. Date of download: 6/3/2016 Copyright © ASME. All rights reserved. From: Porous Silicon Morphology: Photo-Electrochemically Etched by Different Laser Wavelengths J. Nanotechnol. Eng. Med. 2015;6(1):011003-011003-7. doi:10.1115/1.4030768 I-V characteristic for (a) n-type and (b) p-type Silicon wafer immersed in 5% HF solution in darkness and under illumination of blue laser wavelength Figure Legend:

3. Date of download: 6/3/2016 Copyright © ASME. All rights reserved. From: Porous Silicon Morphology: Photo-Electrochemically Etched by Different Laser Wavelengths J. Nanotechnol. Eng. Med. 2015;6(1):011003-011003-7. doi:10.1115/1.4030768 SEM images for PS samples prepared under irradiation of differ rent wavelengths (a) and (e) 405 nm, (b) magnification of (a), (c) and (f) 473 nm, (d) and (g) 532 nm Figure Legend:

4. Date of download: 6/3/2016 Copyright © ASME. All rights reserved. From: Porous Silicon Morphology: Photo-Electrochemically Etched by Different Laser Wavelengths J. Nanotechnol. Eng. Med. 2015;6(1):011003-011003-7. doi:10.1115/1.4030768 SEM cross section for the PS samples illuminated by different laser wavelengths: (a) 405 nm, (b) 473 nm, and (c) 532 nm Figure Legend:

5. Date of download: 6/3/2016 Copyright © ASME. All rights reserved. From: Porous Silicon Morphology: Photo-Electrochemically Etched by Different Laser Wavelengths J. Nanotechnol. Eng. Med. 2015;6(1):011003-011003-7. doi:10.1115/1.4030768 SEM images of top surface for PS layer etched for (a) 30 mins, (b) 40 mins, (c) 60 mins, (d) 80 mins, and (e) 90 mins Figure Legend:

6. Date of download: 6/3/2016 Copyright © ASME. All rights reserved. From: Porous Silicon Morphology: Photo-Electrochemically Etched by Different Laser Wavelengths J. Nanotechnol. Eng. Med. 2015;6(1):011003-011003-7. doi:10.1115/1.4030768 SEM cross section images of PS layer etched for (a) 30 mins, (b) 40 mins, (c) 60 mins, (d) 80 mins, and (e) 90 mins Figure Legend:

7. Date of download: 6/3/2016 Copyright © ASME. All rights reserved. From: Porous Silicon Morphology: Photo-Electrochemically Etched by Different Laser Wavelengths J. Nanotechnol. Eng. Med. 2015;6(1):011003-011003-7. doi:10.1115/1.4030768 SEM images for n-type (a) and p-type (b) Figure Legend:

8. Date of download: 6/3/2016 Copyright © ASME. All rights reserved. From: Porous Silicon Morphology: Photo-Electrochemically Etched by Different Laser Wavelengths J. Nanotechnol. Eng. Med. 2015;6(1):011003-011003-7. doi:10.1115/1.4030768 SEM images for the surface and the cross section for n (111) PS (a) and (c) and n (100) PS (b) and (d) Figure Legend: