Presentation is loading. Please wait.

Presentation is loading. Please wait.

Fig. 4 from Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance.

Published byRosamond Lester Modified over 8 years ago

Similar presentations

Presentation on theme: "Fig. 4 from Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance."— Presentation transcript:

1 Fig. 4 from Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance (Image 1 of 3) Hiroyuki Ota et al 2016 Jpn. J. Appl. Phys. 55 08PD01 doi:10.7567/JJAP.55.08PD01

2 Fig. 4 from Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance (Image 2 of 3) Hiroyuki Ota et al 2016 Jpn. J. Appl. Phys. 55 08PD01 doi:10.7567/JJAP.55.08PD01

3 Fig. 4 from Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance (Image 3 of 3) Hiroyuki Ota et al 2016 Jpn. J. Appl. Phys. 55 08PD01 doi:10.7567/JJAP.55.08PD01

Download ppt "Fig. 4 from Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance."

Similar presentations

Silicon on Insulator Advanced Electronic Devices Karthik Swaminathan.

Silicon on Insulator Advanced Electronic Devices Karthik Swaminathan.
Fig. 4-1, p. 107. Fig. 4-2, p. 109 Fig. 4-3, p. 110.

Fig. 4-1, p Fig. 4-2, p. 109 Fig. 4-3, p. 110.
Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.

Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.
P.464. Table 13-1, p.465 Fig. 13-1, p.466 Fig. 13-2, p.467.

P.464. Table 13-1, p.465 Fig. 13-1, p.466 Fig. 13-2, p.467.
Fig. 11-1, p. 359. p. 360 Fig. 11-2, p. 361 Fig. 11-3, p. 361.

Fig. 11-1, p p. 360 Fig. 11-2, p. 361 Fig. 11-3, p. 361.
Kevin WangNanofabrication Seminar2008/4/27.  Aguirre, C.M., Martel, R. et al.  Engineering Physics, EP Montréal  Chemistry, U. of Montréal  Backgated.

Kevin WangNanofabrication Seminar2008/4/27.  Aguirre, C.M., Martel, R. et al.  Engineering Physics, EP Montréal  Chemistry, U. of Montréal  Backgated.
Optimization of Carbon Nanotube Field-Effect Transistors (FETs) Alexandra Ford NSE 203/EE 235 Class Presentation March 5, 2007.

Optimization of Carbon Nanotube Field-Effect Transistors (FETs) Alexandra Ford NSE 203/EE 235 Class Presentation March 5, 2007.
Xlab.me.berkeley.edu Xlab Confidential – Internal Only EE235 Carbon Nanotube FET Volker Sorger.

Xlab.me.berkeley.edu Xlab Confidential – Internal Only EE235 Carbon Nanotube FET Volker Sorger.
Table 6-1, p. 161. Fig. 6-1, p. 162 p. 163 Fig. 6-2, p. 164.

Table 6-1, p Fig. 6-1, p. 162 p. 163 Fig. 6-2, p. 164.
© Digital Integrated Circuits 2nd Devices Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic.

© Digital Integrated Circuits 2nd Devices Digital Integrated Circuits A Design Perspective The Devices Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic.
Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective
Reading: Finish Chapter 6

Reading: Finish Chapter 6
Fred Chen & Lixin Su SOI DRAM Low Power, Multi-Gigabit DRAM Cell Design Issues Using SOI Technology Fred Chen & Lixin Su May 12, 1999 A Presentation for.

Fred Chen & Lixin Su SOI DRAM Low Power, Multi-Gigabit DRAM Cell Design Issues Using SOI Technology Fred Chen & Lixin Su May 12, 1999 A Presentation for.
P. 192. Fig. 6-1, p. 193 Fig. 6-2, p. 193 Fig. 6-3, p. 195.

P Fig. 6-1, p. 193 Fig. 6-2, p. 193 Fig. 6-3, p. 195.
Figure 1.1 The observer in the truck sees the ball move in a vertical path when thrown upward. (b) The Earth observer views the path of the ball as a parabola.

Figure 1.1 The observer in the truck sees the ball move in a vertical path when thrown upward. (b) The Earth observer views the path of the ball as a parabola.
The Devices Digital Integrated Circuit Design Andrea Bonfanti DEIB

The Devices Digital Integrated Circuit Design Andrea Bonfanti DEIB
Jan M. Rabaey The Devices Digital Integrated Circuits© Prentice Hall 1995 Introduction.

Jan M. Rabaey The Devices Digital Integrated Circuits© Prentice Hall 1995 Introduction.
CMOS Scaling Two motivations to scale down

CMOS Scaling Two motivations to scale down
Basic MOSFET I-V characteristic(1/3) High circuit operation speed  large I ON small Subthreshold Slope (SS) Low power consumption  small I OFF (Silicon-on-insulator.

Basic MOSFET I-V characteristic(1/3) High circuit operation speed  large I ON small Subthreshold Slope (SS) Low power consumption  small I OFF (Silicon-on-insulator.
Capacitance-Voltage of Al 2 O 3 Gate Dielectric by ALD on Enhancement-mode InGaAs MOSFET Y. Xuan, H. C. Lin, P. D. Ye, and G. D. Wilk, “Capacitance-voltage.

Capacitance-Voltage of Al 2 O 3 Gate Dielectric by ALD on Enhancement-mode InGaAs MOSFET Y. Xuan, H. C. Lin, P. D. Ye, and G. D. Wilk, “Capacitance-voltage.

Similar presentations

Ads by Google