1. Date of download: 6/9/2016 Copyright © 2016 SPIE. All rights reserved. Process flow chart of the trilevel resist system using the polysilazane on the spin-on glass used as the middle layer. SGPZ means the spin-on glass is made from the polysilazane. Figure Legend: From: Application of polysilazane to etch mask in pattern transfer processes for deep and vacuum ultraviolet lithography J. Micro/Nanolith. MEMS MOEMS. 2006;5(2):023007-023007-4. doi:10.1117/1.2198841

2. Date of download: 6/9/2016 Copyright © 2016 SPIE. All rights reserved. Thickness of underlayer (spin-on carbon) versus baking temperatures. Figure Legend: From: Application of polysilazane to etch mask in pattern transfer processes for deep and vacuum ultraviolet lithography J. Micro/Nanolith. MEMS MOEMS. 2006;5(2):023007-023007-4. doi:10.1117/1.2198841

3. Date of download: 6/9/2016 Copyright © 2016 SPIE. All rights reserved. Elemental ratios of the polysilazane baked at 200°C and 300°C, respectively. Figure Legend: From: Application of polysilazane to etch mask in pattern transfer processes for deep and vacuum ultraviolet lithography J. Micro/Nanolith. MEMS MOEMS. 2006;5(2):023007-023007-4. doi:10.1117/1.2198841

4. Date of download: 6/9/2016 Copyright © 2016 SPIE. All rights reserved. Expected structural changes of the polysilazane through baking. Figure Legend: From: Application of polysilazane to etch mask in pattern transfer processes for deep and vacuum ultraviolet lithography J. Micro/Nanolith. MEMS MOEMS. 2006;5(2):023007-023007-4. doi:10.1117/1.2198841

5. Date of download: 6/9/2016 Copyright © 2016 SPIE. All rights reserved. Cross sectional resist profile of 80-nm isolated line pattern on the stacked film of the barrier layer (1nm)∕SGPZ(45nm)/spin-on carbon (300nm). Figure Legend: From: Application of polysilazane to etch mask in pattern transfer processes for deep and vacuum ultraviolet lithography J. Micro/Nanolith. MEMS MOEMS. 2006;5(2):023007-023007-4. doi:10.1117/1.2198841

6. Date of download: 6/9/2016 Copyright © 2016 SPIE. All rights reserved. Etch rates of the SGPZ under the oxygen-based RIE versus film density, including the polysiloxsane and the CVD SiO2 for comparison. Figure Legend: From: Application of polysilazane to etch mask in pattern transfer processes for deep and vacuum ultraviolet lithography J. Micro/Nanolith. MEMS MOEMS. 2006;5(2):023007-023007-4. doi:10.1117/1.2198841

7. Date of download: 6/9/2016 Copyright © 2016 SPIE. All rights reserved. Reflectivity at the interface of the resist/barrier layer varying SGPZ thickness in comparison with that in the film structure of resist/SGPZ/underlayer at the wavelength of an ArF excimer laser. Figure Legend: From: Application of polysilazane to etch mask in pattern transfer processes for deep and vacuum ultraviolet lithography J. Micro/Nanolith. MEMS MOEMS. 2006;5(2):023007-023007-4. doi:10.1117/1.2198841

8. Date of download: 6/9/2016 Copyright © 2016 SPIE. All rights reserved. Calculated total reflectivity at resist/SGPZ interface versus SGPZ thickness. Film structure is resist/SGPZ/spin-on carbon (300nm)∕Si substrate. Figure Legend: From: Application of polysilazane to etch mask in pattern transfer processes for deep and vacuum ultraviolet lithography J. Micro/Nanolith. MEMS MOEMS. 2006;5(2):023007-023007-4. doi:10.1117/1.2198841