1. Date of download: 6/21/2016 Copyright © 2016 SPIE. All rights reserved. Temperature-dependent output power measured from the four fabricated devices with an injection current density of 32 A/cm2. Figure Legend: From: Effects of last barrier thickness on the hot–cold factor of GaN-based light-emitting diodes J. Photon. Energy. 2015;5(1):057602. doi:10.1117/1.JPE.5.057602

2. Date of download: 6/21/2016 Copyright © 2016 SPIE. All rights reserved. Normalized light-emitting diode (LED) output power [i.e., Po(T)/Po(RT)] as a function of temperature for the four fabricated samples. Figure Legend: From: Effects of last barrier thickness on the hot–cold factor of GaN-based light-emitting diodes J. Photon. Energy. 2015;5(1):057602. doi:10.1117/1.JPE.5.057602

3. Date of download: 6/21/2016 Copyright © 2016 SPIE. All rights reserved. Current-voltage (I-V) characteristics measured from the GaN-based LEDs fabricated in this study. Figure Legend: From: Effects of last barrier thickness on the hot–cold factor of GaN-based light-emitting diodes J. Photon. Energy. 2015;5(1):057602. doi:10.1117/1.JPE.5.057602

4. Date of download: 6/21/2016 Copyright © 2016 SPIE. All rights reserved. Hot/cold factor as a function of the injection current for the GaN-based LEDs fabricated in this study. Figure Legend: From: Effects of last barrier thickness on the hot–cold factor of GaN-based light-emitting diodes J. Photon. Energy. 2015;5(1):057602. doi:10.1117/1.JPE.5.057602