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benoit.caylar@cea.fr FABRICATION, CHARACTERIZATION OF A 3D DIAMOND DETECTOR Benoît CAYLAR On behalf of the 3D Diamond Detector Collaboration
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benoit.caylar@cea.fr At the beginning, a small collaboration between Manchester, CEA-LIST and CERN CEA-LIST CERN The University of Manchester Growing in 2011 ETH Zürich LGEP-Paris Ohio State University 2 3D DIAMOND DETECTOR COLLABORATION 3D diamond activities has started in 2010… 13 th Vienna Conference on Instrumentation | 12-02-2013
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benoit.caylar@cea.fr 3 3D DIAMOND DETECTOR COLLABORATION 13 th Vienna Conference on Instrumentation | 12-02-2013 The 3D Diamond Detector Collaboration » M. Ahmed » J. Alvarez » F. Bachmair » L. Bäni » P. Bergonzo » B. Caylar » I. Haughton » D. Hits » H. Kagan » R. Kass » L. Li » A. Oh » S. Phan » M. Pomorski » D. Smith » D. Tromson » V. Tyzhnevyi » C. da Via » R. Wallny » S. Watts » T. Wengler » D. Whitehead
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benoit.caylar@cea.fr Planar geometry 4 CONTEXT What is a 3D detector ? 13 th Vienna Conference on Instrumentation | 12-02-2013 » S.I. Parker et al., NIM. A 395 (1997) 328 500µm 50µm Higher electric field for a given applied bias voltage Shorter drift path Lower probability of trapping 3D geometry
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benoit.caylar@cea.fr 5 CONTEXT TCAD Simulation 13 th Vienna Conference on Instrumentation | 12-02-2013 Electrostatic Potential +40V Absolute Electric Field Electrons density Cut @ Z=250 (25,25) MIP 100µm Electron cloud generated by a MIP drifting under Electric field 0,6 ns
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benoit.caylar@cea.fr 6 CONTEXT Quick overview of existing solid state 3D detectors 13 th Vienna Conference on Instrumentation | 12-02-2013 Solid state 3D detectors have already been produce in several sensing materials Silicon » High energy physics : radiation hard trackers » Looking for being installed in part of ATLAS-IBL CdTe/CdZnTe » For medical applications : X-ray detectors, Gamma Camera GaAs » For medical applications : X-ray detectors, Gamma Camera But there is at least one interesting candidate left…
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benoit.caylar@cea.fr 7 CONTEXT Diamond as sensing material 13 th Vienna Conference on Instrumentation | 12-02-2013 Advantages Large band gap : 5,48 eV » High resistivity: low leakage current. Low dielectric constant : 5,7 » Low capacitance : low noise High breakdown field : 10 7 V/m » Operation at high voltage Large thermal conductivity : > 1800 W.cm -1.K -1 » Operation without cooling High displacement energy : 43 eV » Radiation hard Limits High energy required to create an e-h pair » Low signal Only small area available » Single crystal : 5x5 mm² » Poly-crystalline sample : 10x10 mm² Expensive Diamond is already used at LHC
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benoit.caylar@cea.fr 8 BURIED ELECTRODES Fs-laser setup and fabrication 13 th Vienna Conference on Instrumentation | 12-02-2013 Electrodes are processed using laser-induced graphitization of diamond bulk Wavelength : 800nm Repetition rate : 1kHz Pulse length : 100fs Spot size : 10µm
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benoit.caylar@cea.fr 9 BURIED ELECTRODES Structural characterization 13 th Vienna Conference on Instrumentation | 12-02-2013 Femtosecond laser » Diameter : 5µm » Pitch < 35µm Laser process improvement over the past two years 100µm YAG Laser » Hollow, conical shape » Diameter : 100µm » Pitch : 300µm UV Laser + x10 Lens » Diameter : 75µm » Pitch : 200µm UV Laser + x20 Lens » Diameter : 20µm » Pitch : 150µm 100µm Dec 2010 Feb 2011 Jun 2011 Apr 2012
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benoit.caylar@cea.fr 10 BURIED ELECTRODES Structural characterization 13 th Vienna Conference on Instrumentation | 12-02-2013 Resistance distribution in the mapping area 1µm Electrode mapping using Conductive probe AFM AFM mapping Resistance mapping 200 kΩ ρ ~ 1 Ω.cm R
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benoit.caylar@cea.fr 11 3D DIAMOND DETECTOR Batch 1 – April 2012 13 th Vienna Conference on Instrumentation | 12-02-2013 Optical microscopy » Graphitization process wasn’t optimized – 70% success rate Optical microscopy – Crossed polarizers (Surface)Optical microscopy – Crossed polarizers (In Bulk)Optical microscopy – 45° Tilt 50µm 125µm Rectangular unit cell
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benoit.caylar@cea.fr 1213 th Vienna Conference on Instrumentation | 12-02-2013 3D DIAMOND DETECTOR Characterization using protons micro-beam Ion Beam Induce Current (IBIC) setup @IRB, Zagreb 4.5 MeV Protons Spot size : 1µm Ion by ion hits Penetration depth : 100µm Readout electronic : Charge Sensitive Amplifier Diamond sample Proton µ-beam
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benoit.caylar@cea.fr 1313 th Vienna Conference on Instrumentation | 12-02-2013 3D DIAMOND DETECTOR Characterization using protons micro-beam IBIC mapping – Batch 1 Single crystal sample HV = +1V » The inefficient area is due to a broken strip » All connected columns are active
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benoit.caylar@cea.fr 1413 th Vienna Conference on Instrumentation | 12-02-2013 3D DIAMOND DETECTOR Characterization using protons micro-beam IBIC mapping – Increasing positive bias +1V +40V +100V +5V » CCE is non uniform » Probably due to bad contact quality or electrodes non uniformity
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benoit.caylar@cea.fr 1513 th Vienna Conference on Instrumentation | 12-02-2013 3D DIAMOND DETECTOR Characterization using protons micro-beam IBIC mapping – Charge Collection efficiency spectra 100% CCE
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benoit.caylar@cea.fr 16 3D DIAMOND DETECTOR Batch 2 – August 2012 13 th Vienna Conference on Instrumentation | 12-02-2013 Batch 2 improvements Sc + PcCVD samples 100% Graphitization rate Ti/Pt/Au contacts Three structures on one diamond sample » Face centered cubic cell 100µm with buried electrodes ( A ) » Analog metallized structure without buried electrodes ( B ) » 2D Geometry classical pattern (Strip) ( C ) (A)(A) (B)(B)(C)(C)
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benoit.caylar@cea.fr 17 3D DIAMOND DETECTOR Batch 2 – August 2012 13 th Vienna Conference on Instrumentation | 12-02-2013 Test beam setup @ CERN SPS H6 line » 120 GeV Protons » Spill every 40sec » 60-100k triggers per spill Silicon telescope » Two X and two Y planes in front of diamond » Two X and two Y planes in back of diamond » 3,6k evenets recorded per spill » Scintillator triggered Diamond pumped » Before the start of first measurement » After changing bias voltage polarity » C. Colledani et al., Nuclear Instruments and Methods in Physics Research A 372 ( 1996) 379-384
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benoit.caylar@cea.fr 18 3D DIAMOND DETECTOR Batch 2 – August 2012 13 th Vienna Conference on Instrumentation | 12-02-2013 Fiducial cuts defined by requiring hits in Exactly one cluster in each silicon plane Exactly one cluster in diamond Cuts for analysis
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benoit.caylar@cea.fr MIPs spectra measured on single crystal sample 3D area collects same amount of charges as strip detector although weaker electric field Low charge collection in the « 3D without columns » area » Prove buried electrodes contribution in charge collection 19 3D DIAMOND DETECTOR Test Beam @ CERN SPS 13 th Vienna Conference on Instrumentation | 12-02-2013 Strip detector +500V No buried electrodes +25V 3D Diamond detector +25V Mean 1068 Mean 451 Mean 990
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benoit.caylar@cea.fr MIPs spectra measured on single crystal sample 20 3D DIAMOND DETECTOR Test Beam @ CERN SPS 13 th Vienna Conference on Instrumentation | 12-02-2013 Strip detector 3D diamond
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benoit.caylar@cea.fr 21 CONCLUSION 3D diamond detector works ! 13 th Vienna Conference on Instrumentation | 12-02-2013 Conclusion Real progress has been achieved in the last three years This work demonstrates the feasibility of fabrication of 3D diamond detectors CVD diamond detectors with laser-processed burried electrodes were investigated with micro-focused ion beam and in CERN test beams. A lot of work is ahead to make this technology available for high luminosity experiments Thanks for your attention !
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benoit.caylar@cea.fr 2213 th Vienna Conference on Instrumentation | 12-02-2013 Spare slides
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benoit.caylar@cea.fr 23 BURIED ELECTRODES Why is femtosecond laser so much better ? 13 th Vienna Conference on Instrumentation | 12-02-2013 A two-step process Producing a graphitic seed at the surface » Excitation of a large number of valence electrons via multi-photon absorption » Energy barrier decreases » Phase transition Diamond- Graphite Propagation of laser supported graphitic wave No heat accumulation T.V. Kononenko et Al – Rus’nanotech (2010)
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benoit.caylar@cea.fr 24 BURIED ELECTRODES Structural characterization 13 th Vienna Conference on Instrumentation | 12-02-2013 Raman Analysis EHT = 5kVWD = 4.9mmInLens detector Diamond Electrode Border
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